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    Nanoparticle structure and manufacturing process of multi-wavelength light emitting device
    32.
    发明申请
    Nanoparticle structure and manufacturing process of multi-wavelength light emitting device 审中-公开
    纳米粒子结构及制造工艺的多波长发光器件

    公开(公告)号：US20070108888A1

    公开(公告)日：2007-05-17

    申请号：US11442471

    申请日：2006-05-26

    申请人： Wei-Kuo Chen ,  Wen-Cheng Ke

    发明人： Wei-Kuo Chen ,  Wen-Cheng Ke

    IPC分类号： H01J1/62

    CPC分类号： C09K11/7774 ,  B82Y20/00 ,  C09K11/0883 ,  C09K11/584 ,  C09K11/613 ,  C09K11/642 ,  C09K11/7731 ,  C09K11/7734 ,  C09K11/7789 ,  C09K11/7791 ,  C09K11/7792 ,  C09K11/883 ,  H01L33/08 ,  H01L33/18 ,  H01L33/50

    摘要： A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier layer 3 wherein at least one stacked layer in the device contains nanoparticles. As a result, the emitting wavelengths of the multi-stacked active layer structure consist parts (or all) of the emitting wavelengths come from the stack layers containing nanoparticles, and parts (or all) of the emitting wavelengths come from the stack layers not containing nanoparticles. In another embodiment, parts (or all) of the emitting wavelengths of the multi-stacked active layer structure can be also used to trigger one or more phosphorescences from the phosphors, thus the emitting wavelengths of such a phosphors converted light emitting device may come partially from the multi-stacked active layer itself and partially (or all) from the phosphors.

    摘要翻译： 多波长发光器件的结构包括多层有源层结构。 每个堆叠层包括较低能带隙4和较高能带隙势垒层3，其中该器件中的至少一个堆叠层含有纳米颗粒。 结果，多层有源层结构的发射波长包括发射波长的部分（或全部）来自包含纳米颗粒的堆叠层，并且发射波长的部分（或全部）来自不包含 纳米颗粒。 在另一个实施例中，多层有源层结构的发射波长的部分（或全部）也可以用于从磷光体触发一个或多个磷光，因此这种磷光体转换的发光器件的发射波长可能会部分地 从多层有源层本身和部分（或全部）与荧光体。

    Electroluminescent phosphor, process for producing the same, and electroluminescent device containing the same
    33.
    发明申请
    Electroluminescent phosphor, process for producing the same, and electroluminescent device containing the same 有权
    电致发光荧光体及其制造方法以及含有该荧光体的电致发光装置

    公开(公告)号：US20070001585A1

    公开(公告)日：2007-01-04

    申请号：US11198320

    申请日：2005-08-08

    申请人： Kazuhiro Hasegawa

    发明人： Kazuhiro Hasegawa

    IPC分类号： H05B33/14 ,  H05B33/00 ,  C09K11/02 ,  C09K11/08

    CPC分类号： C09K11/025 ,  C09K11/584 ,  H05B33/145 ,  Y10S428/917

    摘要： An electroluminescent phosphor comprising ZnS-based phosphor core particles and a coating layer provided on the individual core particles, the core particles having a mean particle size of 0.1 to 15 μm with a coefficient of variation of particle size distribution less than 35% and containing at least 30%, based on total particles, of particles having at least 10 stacking faults with an interplanar spacing of 5 nm or less.

    摘要翻译： 1.一种电致发光荧光体，其包含ZnS系荧光体核粒子和设置在各个芯粒子上的被覆层，所述核粒子的平均粒径为0.1〜15μm，粒径分布的变异系数小于35％ 至少30％，基于总颗粒，具有至少10个具有5nm或更小的晶面间距的堆垛层错的颗粒。

    ELECTROLUMINESCENT PHOSPHOR POWDER WITH D50 VALUE OF LESS THAN 12um AND METHOD OF MAKING
    34.
    发明申请
    ELECTROLUMINESCENT PHOSPHOR POWDER WITH D50 VALUE OF LESS THAN 12um AND METHOD OF MAKING 有权
    D50值低于12um的电致发光磷光体粉末及其制造方法

    公开(公告)号：US20060220547A1

    公开(公告)日：2006-10-05

    申请号：US10907360

    申请日：2005-03-30

    申请人： Judy Belinski-Wolfe ,  Thomas Wolfe ,  Brian Payne

    发明人： Judy Belinski-Wolfe ,  Thomas Wolfe ,  Brian Payne

    IPC分类号： C09K11/54 ,  C09K11/56

    CPC分类号： C09K11/584

    摘要： There is presented an electroluminescent phosphor powder of copper-activated zinc sulfide particles that has a size distribution with a D50 value of less than 12 μm, and more preferably less than 10 μm. The powder is preferably made by a method that includes the steps of combining copper-doped zinc sulfide with sulfur, zinc oxide and a chloride-containing flux to form a first mixture; preliminarily firing the first mixture and milling the preliminarily fired first mixture to form a milled material having a D50 value of less than or equal to about 5 μm; blending the milled material with sulfur, zinc oxide and a chloride-containing flux to form a second mixture; firing the mixture in a first firing step at a temperature in a range of about 1020° C. to about 1080° C. to form a hexagonal zinc sulfide material; inducing defects into the hexagonal zinc sulfide material; firing the hexagonal zinc sulfide material in a second firing step at a temperature in a range of about 650° C. to about 850° C. to form an electroluminescent phosphor; and sifting the electroluminescent phosphor to provide an electroluminescent phosphor powder comprising phosphor particles that have a size distribution with a D50 value of less than 12 μm. The step of inducing defects may be accomplished by milling, mulling or sonification of the mixture.

    摘要翻译： 提出了具有D50值小于12μm，更优选小于10μm的尺寸分布的铜活化硫化锌颗粒的电致发光荧光体粉末。 该粉末优选通过包括以下步骤的方法制备：掺杂铜的硫化锌与硫，氧化锌和含氯化物的助熔剂以形成第一混合物; 预先烧制第一混合物并研磨预先烧制的第一混合物以形成D50值小于或等于约5μm的研磨材料; 将研磨的材料与硫，氧化锌和含氯化物的助熔剂混合以形成第二混合物; 在约1020℃至约1080℃的温度下，在第一烧制步骤中焙烧该混合物以形成六方硫化锌材料; 引起六方硫化锌材料的缺陷; 在第二烧成工序中，在约650℃〜约850℃的温度范围内烧成六方晶硫化锌材料，形成电致发光荧光体; 以及筛选所述电致发光荧光体以提供包含荧光体颗粒的电致发光荧光体粉末，所述荧光体颗粒具有D50值小于12μm的尺寸分布。 诱导缺陷的步骤可以通过研磨，研磨或超声波处理来实现。

    Electroluminescent phosphor, method for producing the same and device containing the same
    35.
    发明申请
    Electroluminescent phosphor, method for producing the same and device containing the same 审中-公开
    电致发光荧光体，其制造方法及其装置

    公开(公告)号：US20060192486A1

    公开(公告)日：2006-08-31

    申请号：US11362768

    申请日：2006-02-28

    申请人： Kyohei Ogawa

    发明人： Kyohei Ogawa

    IPC分类号： H05B33/00

    CPC分类号： H05B33/14 ,  C09K11/584

    摘要： An electroluminescent phosphor comprising: ZnS-based phosphor particles and a coating layer provided on a surface of the particle, wherein the particles have an average particle size of from 0.1 to 20 μm, and a coefficient of variation in a particle size distribution of less than 35%, and a content of particles having 10 or more stacking faults with an interplanar spacing of 5 nm or less is 30% or more based on all of the ZnS-based phosphor particles.

    摘要翻译： 一种电致发光荧光体，包括：ZnS系荧光体粒子和设置在该粒子表面的被覆层，其中，所述粒子的平均粒径为0.1〜20μm，粒径分布的变异系数小于 35％，并且基于所有的ZnS系荧光体粒子，具有面积间隔为5nm以下的10个以上堆垛层错的粒子的含量为30％以上。