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公开(公告)号:US09957199B2
公开(公告)日:2018-05-01
申请号:US15429767
申请日:2017-02-10
Inventor: Teddy M. Keller , Andrew P. Saab , Matthew Laskoski
IPC: C04B35/563 , C04B35/80 , C04B35/64 , C04B35/76 , C04B35/52 , C04B35/524 , C04B35/591 , C04B35/83 , B82Y30/00
CPC classification number: C04B35/563 , B82Y30/00 , C04B35/522 , C04B35/524 , C04B35/591 , C04B35/64 , C04B35/76 , C04B35/806 , C04B35/83 , C04B2235/3821 , C04B2235/3856 , C04B2235/386 , C04B2235/3886 , C04B2235/421 , C04B2235/422 , C04B2235/46 , C04B2235/48 , C04B2235/5216 , C04B2235/524 , C04B2235/5248 , C04B2235/5288 , C04B2235/5454 , C04B2235/602 , C04B2235/604 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/6581 , C04B2235/80 , C04B2235/95 , C04B2235/9661
Abstract: A composition having nanoparticles of a boron carbide and a carbonaceous matrix. The composition is not in the form of a powder. A composition comprising boron and an organic component. The organic component is an organic compound having a char yield of at least 60% by weight or a thermoset made from the organic compound. A method of combining boron and an organic compound having a char yield of at least 60% by weight, and heating to form boron carbide or boron nitride nanoparticles.
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公开(公告)号:US09945022B2
公开(公告)日:2018-04-17
申请号:US15338529
申请日:2016-10-31
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Inventor: Da-Ming Zhuang , Ming Zhao , Ming-Jie Cao , Li Guo , Ze-Dong Gao , Yao-Wei Wei
IPC: H01L29/12 , C23C14/08 , H01L21/02 , H01L29/24 , H01L29/786 , H01L29/66 , C23C14/58 , C03C17/245 , C04B35/453 , C23C14/34 , H01L21/324 , C23C14/35 , C04B35/01 , C04B35/50 , C04B35/626 , C04B35/645
CPC classification number: C23C14/086 , C03C17/245 , C03C2217/23 , C03C2218/154 , C04B35/01 , C04B35/453 , C04B35/50 , C04B35/6261 , C04B35/645 , C04B2235/3229 , C04B2235/3284 , C04B2235/3286 , C04B2235/6562 , C04B2235/72 , C04B2235/77 , C23C14/08 , C23C14/34 , C23C14/3414 , C23C14/35 , C23C14/5806 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L29/24 , H01L29/247 , H01L29/66969 , H01L29/7869
Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.
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公开(公告)号:US09890087B2
公开(公告)日:2018-02-13
申请号:US13976724
申请日:2011-12-28
Applicant: Charles Schenck Wiley , Robert F. Speyer
Inventor: Charles Schenck Wiley , Robert F. Speyer
IPC: C04B35/563 , C04B35/626 , C04B35/628 , C04B35/632 , C04B35/634 , C04B35/645 , C04B33/32
CPC classification number: C04B35/563 , C04B33/32 , C04B35/62655 , C04B35/62695 , C04B35/62821 , C04B35/6325 , C04B35/63476 , C04B35/6455 , C04B2235/3813 , C04B2235/3821 , C04B2235/3826 , C04B2235/422 , C04B2235/425 , C04B2235/449 , C04B2235/48 , C04B2235/5409 , C04B2235/5445 , C04B2235/5481 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/661 , C04B2235/668 , C04B2235/77 , C04B2235/784 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96
Abstract: Disclosed is a method for fabricating a solid article from a boron carbide powder comprising boron carbide particles that are coated with a titanium compound. Further disclosed herein are the unique advantages of the combined use of titanium and graphite additives in the form of water soluble species to improve intimacy of mixing in the green state. The carbon facilitates sintering, whose concentration is then attenuated in the process of forming very hard, finely dispersed Ti B2 phases. The further recognition of the merits of a narrow particle size distribution B4C powder and the use of sintering soak temperatures at the threshold of close porosity which achieve post-HIPed microstructures with average grain sizes approaching the original median particle size. The combination of interdependent factors has led to B4C-based articles of higher hardness than previously reported.
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公开(公告)号:US09881747B2
公开(公告)日:2018-01-30
申请号:US15010884
申请日:2016-01-29
Inventor: Terry D. Rolin , Curtis W. Hill
IPC: H01G11/84 , C04B35/468 , H01G4/12 , C04B35/628 , C04B35/626 , C04B35/63 , C04B35/638 , H01G11/56 , C04B35/64 , C04B35/622
CPC classification number: H01G11/84 , C03C8/20 , C04B35/4682 , C04B35/62222 , C04B35/6262 , C04B35/6264 , C04B35/6265 , C04B35/6268 , C04B35/62807 , C04B35/62813 , C04B35/62884 , C04B35/62897 , C04B35/6303 , C04B35/6316 , C04B35/632 , C04B35/638 , C04B35/64 , C04B2235/3215 , C04B2235/3217 , C04B2235/3236 , C04B2235/3418 , C04B2235/36 , C04B2235/365 , C04B2235/5445 , C04B2235/6026 , C04B2235/6562 , C04B2235/6567 , C04B2235/6584 , C04B2235/6586 , C04B2235/768 , C04B2235/96 , H01G4/1227 , H01G11/56
Abstract: An ink of the formula: 60-80% by weight BaTiO3 particles coated with SiO2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900° C. for less than 5 minutes and allowing the ink and substrate to cool to ambient in N2 atmosphere. Also a dielectric made by: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900° C. for less than 5 minutes and allowing the layer to cool to ambient in N2 atmosphere.
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公开(公告)号:US09868276B2
公开(公告)日:2018-01-16
申请号:US14361375
申请日:2012-11-28
Applicant: Corning Incorporated
Inventor: Khaled Layouni , Yanxia Ann Lu , Paulo Gaspar Jorge Marques
CPC classification number: B32B38/0036 , B32B2038/0052 , B32B2309/02 , B32B2309/04 , B32B2309/60 , C04B37/005 , C04B2235/46 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/662 , C04B2235/9692 , C04B2237/08 , C04B2237/083 , C04B2237/16 , C04B2237/343 , C04B2237/365 , C04B2237/368 , C04B2237/708 , C04B2237/88 , Y10T156/10 , Y10T403/477
Abstract: A method of forming an improved sealed joint between two or more shaped ceramic structures includes providing at least first and second ceramic structures joined together by a joint comprising one or more of silicon, a silicon alloy and a silicon compound, the joint including an exposed portion interior of the joined structures, then converting at least a portion of the one or more of silicon, a silicon alloy, and a silicon compound of the joint to silicon nitride and/or silicon carbide, desirably at least at an interior exposed portion of the joint, so as to provide increased chemical resistance for the joint when aggressive chemicals are used within device formed from the sealed-together ceramic structures. The ceramic structures desirably comprise silicon carbide.
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公开(公告)号:US09861129B2
公开(公告)日:2018-01-09
申请号:US14414114
申请日:2014-06-16
Applicant: Shenzhen Smoore Technology Limited , Hunan Zhengyuan Institute for Energy Storage Materials and Devices
Inventor: Pingkun Liu , Hongming Zhou , Jian Li , Qinglu Xia
IPC: C04B35/14 , C04B38/06 , A24F47/00 , C04B38/00 , C04B35/626
CPC classification number: A24F47/008 , C04B35/14 , C04B35/6263 , C04B35/62685 , C04B38/0054 , C04B38/06 , C04B2235/3201 , C04B2235/3217 , C04B2235/3272 , C04B2235/3418 , C04B2235/3427 , C04B2235/5212 , C04B2235/6562 , C04B2235/96 , C04B38/0074
Abstract: The present invention relates to a preparation method of a porous ceramic, the porous ceramic, and a use thereof in the electronic cigarette. The method of preparing a porous ceramic includes: mixing amorphous silica, aluminum oxide and iron oxide uniformly to obtain a mixture; sintering the mixture at a temperature of 1000° C. to 1400° C. for 0.5 hour to 3 hours to obtain a precursor; grinding the precursor to obtain precursor powder; mixing the precursor powder, sodium silicate, and porogen uniformly to obtain a premix; mixing and extruding the premix with water to obtain a molded body; and heat preserving the molded body at a temperature of 200° C. to 600° C. for 1 hour to 6 hours, and sintering the molded body at a temperature of 700° C. to 1200° C. for 0.5 hour to 3 hours to obtain the porous ceramic.
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公开(公告)号:US09840769B2
公开(公告)日:2017-12-12
申请号:US14922764
申请日:2015-10-26
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Inventor: Da-Ming Zhuang , Ming Zhao , Ming-Jie Cao , Li Guo , Liang-Qi Ouyang , Ru-Jun Sun
CPC classification number: C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/645 , C04B35/6455 , C04B2235/3229 , C04B2235/3284 , C04B2235/3286 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/77 , C23C14/08 , H01B1/08 , H01J37/3429 , H01L29/24 , H01L29/66969 , H01L29/78693
Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
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公开(公告)号:US20170352455A1
公开(公告)日:2017-12-07
申请号:US15537688
申请日:2015-12-24
Applicant: HITACHI METALS, LTD.
Inventor: Norikazu KOYUHARA , Yasuharu MIYOSHI , Tomoyuki TADA , Satoru TANAKA
CPC classification number: H01F1/344 , C04B35/2658 , C04B35/62685 , C04B35/64 , C04B2235/3208 , C04B2235/3239 , C04B2235/3251 , C04B2235/3255 , C04B2235/3263 , C04B2235/3277 , C04B2235/3284 , C04B2235/3418 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , H01F1/36 , H01F41/0246
Abstract: A method for producing MnZn-ferrite comprising Fe, Mn and Zn as main components, and at least Co, Si and Ca as sub-components, the main components in the MnZn-ferrite comprising 53-56% by mol (as Fe2O3) of Fe, and 3-9% by mol (as ZnO) of Zn, the balance being Mn as MnO, comprising the step of sintering a green body to obtain MnZn-ferrite; the sintering comprising a temperature-elevating step, a high-temperature-keeping step, and a cooling step; the high-temperature-keeping step being conducted at a keeping temperature of higher than 1050° C. and lower than 1150° C. in an atmosphere having an oxygen concentration of 0.4-2% by volume; the oxygen concentration being in a range of 0.001-0.2% by volume during cooling from 900° C. to 400° C. in the cooling step; and the cooling speed between (Tc+70)° C. and 100° C. being 50° C./hour or more, wherein Tc represents a Curie temperature (° C.) calculated from % by mass of Fe2O3 and ZnO.
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公开(公告)号:US09812753B2
公开(公告)日:2017-11-07
申请号:US13925142
申请日:2013-06-24
Applicant: SKYWORKS SOLUTIONS, INC.
Inventor: Michael D. Hill
IPC: H01B1/08 , H04B1/00 , H01P1/00 , H01P1/397 , H04B1/38 , C04B35/64 , H01Q1/50 , C04B35/26 , C04B35/624 , C04B35/626 , H01F1/34 , C01G49/00 , C01G51/00
CPC classification number: H01P1/397 , C01G49/0036 , C01G51/40 , C01P2004/61 , C01P2006/12 , C04B35/26 , C04B35/624 , C04B35/6261 , C04B35/62625 , C04B35/64 , C04B2235/3201 , C04B2235/3215 , C04B2235/3275 , C04B2235/3277 , C04B2235/5445 , C04B2235/6021 , C04B2235/604 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/767 , H01B1/08 , H01F1/348 , H01Q1/50 , H04B1/38
Abstract: Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba3Co2Fe24O41 (Co2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.
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公开(公告)号:US09803265B2
公开(公告)日:2017-10-31
申请号:US14867440
申请日:2015-09-28
Applicant: Gunite Corporation
Inventor: Thomas D. Wood , Neil Anderson , Andrew Halonen
IPC: F16D65/10 , C22C29/06 , B28B11/24 , B28B21/48 , B29B7/48 , B29C47/00 , C04B35/565 , C04B35/622 , C04B35/626 , C04B35/63 , C04B35/632 , C04B35/636 , C04B35/638 , C04B35/80 , F16D65/12 , B29C47/88 , F16D69/02 , B29C47/38 , B29C47/42 , B29K105/06 , B29C47/40
CPC classification number: C22C29/065 , B28B11/245 , B28B21/48 , B29B7/485 , B29C47/0004 , B29C47/0021 , B29C47/003 , B29C47/0033 , B29C47/0059 , B29C47/0064 , B29C47/38 , B29C47/402 , B29C47/408 , B29C47/42 , B29C47/8805 , B29C47/881 , B29C47/884 , B29K2105/06 , B29K2909/02 , C04B35/565 , C04B35/62204 , C04B35/6263 , C04B35/62635 , C04B35/62655 , C04B35/6269 , C04B35/6316 , C04B35/632 , C04B35/6365 , C04B35/638 , C04B35/806 , C04B2235/3418 , C04B2235/3826 , C04B2235/5228 , C04B2235/5248 , C04B2235/526 , C04B2235/5264 , C04B2235/5268 , C04B2235/5296 , C04B2235/5436 , C04B2235/6021 , C04B2235/6562 , C04B2235/77 , F16D65/125 , F16D69/028 , Y02P40/63 , Y10T428/1314 , Y10T428/31678
Abstract: The present invention relates to a metal matrix composite (MMC). The MMC includes a preform formed from a composition having ceramic particles and ceramic fibers and defining a plurality of voids. The metal matrix composite also includes a support element, such as a metal, disposed within the voids of the preform. The MMC has a wear surface defined by both the preform and the support element.
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