公开(公告)号：US07184491B2

公开(公告)日：2007-02-27

申请号：US10655045

申请日：2003-09-05

Applicant: May Suzuki ,  Satoshi Tanaka ,  Taizo Yamawaki ,  Tomonori Tanoue

Inventor： May Suzuki ,  Satoshi Tanaka ,  Taizo Yamawaki ,  Tomonori Tanoue

IPC: H04K1/02

CPC classification number: H03F3/24 ,  H03F1/02 ,  H03F1/0205 ,  H03F1/0227 ,  H03F1/32 ,  H03F2200/102 ,  H03F2200/324 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/66 ,  H04B2001/045 ,  H04L27/20

Abstract: A linear system and an EER system are used in combination such that the EER system can also be used in a cellular phone with a wide output dynamic range. In the EER system, linear control of an amplifier becomes difficult in a low output range. Thus, use of the EER system is limited to a high output range, and the linear system is used in the low output range as in the past. A power efficiency is improved while requirements of linearity are satisfied by this structure. An effective circuit structure is proposed for a switching control system for two systems. In addition, an up-converter is constituted in combination with a step-down element with high responsiveness, whereby a power supply voltage control circuit for the EER system with a wide control range and high responsiveness is provided.

Abstract translation: 线性系统和EER系统组合使用，使得EER系统也可以用在具有宽输出动态范围的蜂窝电话中。 在EER系统中，放大器的线性控制在低输出范围内变得困难。 因此，EER系统的使用被限制在高输出范围，并且线性系统如以往那样在低输出范围内使用。 通过这种结构满足线性要求，提高了功率效率。 提出了一种用于两个系统的开关控制系统的有效电路结构。 此外，上变频器与具有高响应性的降压元件组合构成，由此提供了具有宽控制范围和高响应性的EER系统的电源电压控制电路。

公开(公告)号：US06881639B2

公开(公告)日：2005-04-19

申请号：US10372774

申请日：2003-02-26

Applicant: Kazuhiro Mochizuki ,  Kiyoshi Ouchi ,  Tomonori Tanoue

Inventor： Kazuhiro Mochizuki ,  Kiyoshi Ouchi ,  Tomonori Tanoue

IPC: H01L21/265 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/737 ,  H03F1/30 ,  H03F3/19

CPC classification number: H01L21/263 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/7371 ,  H03F1/302 ,  H03F3/19

Abstract: The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.

Abstract translation: 本发明提供一种半导体器件的制造方法，以低成本制造InGaAs基C顶HBT。 具有较小半径的氦离子注入未被不掺杂的InGaAs间隔层，n型InP集电极层，n型InGaAs覆盖层和集电体组成的叠层的p型InGaAs层（在外部基极区域中） 电极从垂直于外部基底层的表面的方向延伸，或者垂直于3度的角度。 因此，外部基极区域中的p型InGaAs保持p型导电和低电阻，并且外部发射极区域中的n型InAlAs层可以被制成高电阻性。 通过这种方法，可以以较低的成本在较小的芯片上制造InGaAs基C顶HBT，而不增加工艺数量。

公开(公告)号：US06775525B1

公开(公告)日：2004-08-10

申请号：US09697210

申请日：2000-10-26

Applicant: Tomonori Tanoue ,  Kiichi Yamashita

Inventor： Tomonori Tanoue ,  Kiichi Yamashita

IPC: H01Q1112

CPC classification number: H01L29/7371 ,  H01L2224/0603 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19105 ,  H01L2924/30111 ,  H03F1/0216 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/68 ,  H03G1/0005 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A radio communication apparatus including at the transmitter-side output stage a high-frequency power amplifier module that has incorporated therein a single-stage amplifier using one multi-finger type heterojunction bipolar transistor (HBT) or a multi-stage amplifier using a plurality of HBTs sequentially connected in cascade, and at the output end an antenna connected to the high-frequency power amplifier module, wherein first capacitors and first resistors are inserted in series between the input terminal of the high-frequency power amplifier module and the control fingers of the HBT, and second resistors are inserted between the control terminal of the high-frequency power amplifier module and the control fingers of the HBT and connected to the nodes of the first resistors and the first capacitors.

Abstract translation: 一种无线电通信装置，包括在发射机侧输出级的高频功率放大器模块，其中结合有使用一个多指型异质结双极晶体管（HBT）的单级放大器或使用多 HBT顺序地级联连接，在输出端连接到高频功率放大器模块的天线，其中第一电容器和第一电阻串联插入高频功率放大器模块的输入端和控制指 HBT和第二电阻器插入在高频功率放大器模块的控制端子和HBT的控制指头之间，并连接到第一电阻器和第一电容器的节点。

公开(公告)号：US5598015A

公开(公告)日：1997-01-28

申请号：US357342

申请日：1994-12-15

Applicant: Tomonori Tanoue ,  Hiroshi Masuda ,  Tohru Nakamura ,  Takahiro Onai ,  Katsuyoshi Washio

Inventor： Tomonori Tanoue ,  Hiroshi Masuda ,  Tohru Nakamura ,  Takahiro Onai ,  Katsuyoshi Washio

IPC: H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L31/0328 ,  H01L27/082 ,  H01L31/0336

CPC classification number: H01L29/66318 ,  H01L29/7371

Abstract: A hetero-junction bipolar transistor having an emitter composed of a semiconductor having a wider forbidden band width than that of a semiconductor constituting a base is disclosed. In the transistor, the emitter and the electrode leader area composed of a single crystalline semiconductor are provided being extended from the upper part of the emitter to the surface of the base through an insulating layer, for the purpose of making it possible to miniaturize the transistor and to operate the transistor at a high-speed by decreasing the emitter resistance.

Abstract translation: 公开了一种异质结双极晶体管，其具有由具有比构成基极的半导体宽的禁带宽度的半导体构成的发射极。 在晶体管中，由单晶半导体构成的发射极和电极引出区域通过绝缘层从发射极的上部延伸到基底的表面，以便使晶体管小型化 并通过降低发射极电阻来高速运行晶体管。

公开(公告)号：US5258631A

公开(公告)日：1993-11-02

申请号：US884878

申请日：1992-05-18

Applicant: Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

Inventor： Toshiyuki Usagawa ,  Kenji Hiruma ,  Masahiko Kawata ,  Shigeo Goto ,  Katsuhiko Mitani ,  Masao Yamane ,  Susumu Takahashi ,  Tomonori Tanoue ,  Yoshinori Imamura

IPC: H01L21/18 ,  H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L27/06 ,  H01L29/737 ,  H01L29/778 ,  H01L29/06 ,  H01L29/167 ,  H01L29/30 ,  H01L31/072

CPC classification number: H01L29/66318 ,  H01L21/182 ,  H01L21/28587 ,  H01L27/0605 ,  H01L29/66462 ,  H01L29/7373 ,  H01L29/7787

Abstract: This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which causes the disorder of the heterojunction by introduction of an impurity such as by ion implantation or a technique which causes the disorder of the heterojunction by forming a film made of at least one kind of material selected from insulators, metals and semiconductors which have a different linear coefficient of thermal expansion from that of the material of a semiconductor substrate on the heterojunction semiconductor region which is to be disordered. The latter is fabricated by applying either of the techniques described above to a base ohmic contact region. These semiconductor devices can reduce the source-gate resistance and the parasitic base resistance. The invention discloses also the structure of the ohmic contact layer which has a trench on the surface thereof and is particularly effective for reducing the source-gate parasitic resistance.

Abstract translation: 本发明公开了一种异质结型场效应晶体管，例如2DEG-FET和异质结型双极晶体管，例如2DEG-HBT。 前者通过应用其源极和漏极区域的形成来制造通过引入杂质例如通过离子注入引起异质结的紊乱的技术或通过形成由 选自绝缘体，金属和半导体的至少一种材料，其具有不同于待混杂的异质结半导体区域上的半导体衬底的材料的线性热膨胀系数。 后者通过将上述技术中的任一种应用于基极欧姆接触区域来制造。 这些半导体器件可以降低源极栅极电阻和寄生基极电阻。 本发明还公开了欧姆接触层的结构，其在其表面上具有沟槽，并且对于减小源极寄生电阻特别有效。

公开(公告)号：US07045877B2

公开(公告)日：2006-05-16

申请号：US10420740

申请日：2003-04-23

Applicant: Yasunari Umemoto ,  Hideyuki Ono ,  Tomonori Tanoue ,  Yasuo Ohsone ,  Isao Ohbu ,  Chushiro Kusano ,  Atsushi Kurokawa ,  Masao Yamane

Inventor： Yasunari Umemoto ,  Hideyuki Ono ,  Tomonori Tanoue ,  Yasuo Ohsone ,  Isao Ohbu ,  Chushiro Kusano ,  Atsushi Kurokawa ,  Masao Yamane

IPC: H01L31/072

CPC classification number: H01L27/0825 ,  H01L27/0259 ,  H01L29/7371 ,  H01L2224/48091 ,  H01L2224/73265 ,  H03K17/08146 ,  H03K17/615 ,  H01L2924/00014

Abstract: The invention is directed to improve resistance to destruction of a semiconductor device. A protection circuit having a plurality of bipolar transistors which are Darlington connected between outputs (collector and emitter) of an amplification circuit of a high output is electrically connected in parallel with the amplification circuit. The amplification circuit has a plurality of unit HBTs (Heterojunction Bipolar Transistors) which are connected in parallel with each other. The protection circuit has a two-stage configuration including a first group of a protection circuit having a plurality of bipolar transistors Q1 to Q5 and a second group of a protection circuit having a plurality of bipolar transistors.

Abstract translation: 本发明旨在提高对半导体器件的破坏性。 具有连接在高输出的放大电路的输出（集电极和发射极）之间的达林顿的多个双极晶体管的保护电路与放大电路并联电连接。 放大电路具有彼此并联连接的多个单元HBT（异质结双极晶体管）。 保护电路具有包括具有多个双极型晶体管Q 1至Q 5的第一组保护电路和具有多个双极晶体管的第二组保护电路的两级配置。

公开(公告)号：US20050040497A1

公开(公告)日：2005-02-24

申请号：US10878358

申请日：2004-06-29

Applicant: Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

Inventor： Chisaki Takubo ,  Hiroji Yamada ,  Kazuhiro Mochizuki ,  Kenichi Tanaka ,  Tomonori Tanoue ,  Hiroyuki Uchiyama

IPC: H01L21/331 ,  H01L21/306 ,  H01L29/04 ,  H01L29/06 ,  H01L29/737

CPC classification number: H01L29/7371 ,  H01L21/30612 ,  H01L29/045 ,  H01L29/0657

Abstract: The technical subject of the invention is to inhibit disconnection of electrodes caused by a step and bursting caused by residual air. That is, an object of the present invention is to provide a semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. According to the invention, a hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. Accordingly, the present invention uses a novel wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate.

Abstract translation: 本发明的技术课题是抑制由残留空气引起的台阶和破裂引起的电极断开。 也就是说，本发明的目的是提供一种半导体器件，其能够克服存在于闪锌矿型化合物半导体衬底中的凹部的形状的缺陷，其中底部的面积大于其中的表面 横截面形状及其制造方法。 根据本发明，构成半导体器件的半导体衬底中存在的孔或台阶形成为正常的台面形状，而与半导体衬底的表面上的晶体取向无关。 因此，本发明使用对蚀刻掩模下方的蚀刻速度高于半导体衬底的深度方向的蚀刻速率的新型湿式蚀刻溶液。

公开(公告)号：US4553317A

公开(公告)日：1985-11-19

申请号：US437627

申请日：1982-10-29

Applicant: Hiroyuki Sakaki ,  Tomonori Tanoue ,  Hidetoshi Nojiri

Inventor： Hiroyuki Sakaki ,  Tomonori Tanoue ,  Hidetoshi Nojiri

IPC: H01L29/205 ,  H01L29/864 ,  H01L29/868 ,  H01L31/107 ,  H01L31/18 ,  H01L21/20

CPC classification number: H01L31/1844 ,  H01L29/205 ,  H01L29/864 ,  H01L29/868 ,  H01L31/1075 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y10S438/936

Abstract: In a semiconductor element using avalanche multiplication such as a light-receiving element or a microwave oscillating element, a semiconductor A and a semiconductor B which satisfy the following condition:X.sub.A

Abstract translation: 在使用诸如光接收元件或微波振荡元件的雪崩倍数的半导体元件中，满足以下条件的半导体A和半导体B：XA

公开(公告)号：US08396430B2

公开(公告)日：2013-03-12

申请号：US13114340

申请日：2011-05-24

Applicant: Taizo Yamawaki ,  Tomonori Tanoue ,  Kazuaki Hori

Inventor： Taizo Yamawaki ,  Tomonori Tanoue ,  Kazuaki Hori

IPC: H04B1/44

CPC classification number: H04B1/006 ,  H04B1/52

Abstract: Disclosed are a semiconductor integrated circuit device and a wireless communication system that are capable of improving reception sensitivity. The wireless communication system includes, for instance, a first duplexer, a second duplexer, a first low-noise amplifier circuit, and a second low-noise amplifier circuit. A transmission band compliant with a communication standard is split into two segments for use, namely, low- and high-frequency transmission bands. A reception band compliant with the communication standard is split into two segments for use, namely, low- and high-frequency reception bands. The first duplexer uses the low-frequency transmission band and low-frequency reception band as passbands. The second duplexer uses the high-frequency transmission band and high-frequency reception band as passbands. A signal received from the first duplexer and a signal received from the second duplexer are respectively amplified by the first and the second low-noise amplifier circuits, which are respectively provided to handle such signals.

Abstract translation: 公开了能够提高接收灵敏度的半导体集成电路装置和无线通信系统。 无线通信系统包括例如第一双工器，第二双工器，第一低噪声放大器电路和第二低噪声放大器电路。 符合通信​​标准的传输频带被分成两个段，即低频和高频传输频带。 符合通信​​标准的接收频段被分为两段供低频和高频接收频段使用。 第一双工器使用低频传输频带和低频接收频带作为通带。 第二双工器使用高频传输频带和高频接收频带作为通带。 从第一双工器接收的信号和从第二双工器接收的信号分别由分别提供以处理这种信号的第一和第二低噪声放大器电路放大。

公开(公告)号：US07876156B2

公开(公告)日：2011-01-25

申请号：US12412728

申请日：2009-03-27

Applicant: Satoshi Tanaka ,  Tomonori Tanoue

Inventor： Satoshi Tanaka ,  Tomonori Tanoue

IPC: H03G3/30

CPC classification number: H03F3/19 ,  H03F1/0261 ,  H03F3/245 ,  H03F2200/393 ,  H03F2200/451

Abstract: An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

Abstract translation: RF功率放大器具有产生RF发射输出信号的最终级放大器级，检测RF发射输出电平的信号检测器，第一检测器，第二检测器和控制电路。 最后一级放大器级包括晶体管和负载元件，并执行饱和型非线性放大和非饱和型线性放大。 第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。 第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。