公开(公告)号：US20080128713A1

公开(公告)日：2008-06-05

申请号：US11790283

申请日：2007-04-24

申请人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

发明人： Shinichi Saito ,  Digh Hisamoto ,  Tadashi Arai ,  Takahiro Onai

IPC分类号： H01L33/00

CPC分类号： H01L33/34 ,  H01S5/3224

摘要： A light-emitting device according to the present invention includes a first electrode unit 9 for injecting an electron, a second electrode unit 10 for injecting a hole, and light-emitting units 11 and 12 electrically connected to the first electrode unit 9 and the second electrode unit 10 respectively, wherein the light-emitting units 11 and 12 are formed of single-crystal silicon, the light-emitting units 11 and 12 having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units 11 and 12 in a direction orthogonal to the first and second surfaces being made extremely thin.

摘要翻译： 根据本发明的发光器件包括用于注入电子的第一电极单元9，用于注入孔的第二电极单元10和与第一电极单元9电连接的发光单元11和12， 电极单元10，其中发光单元11和12由单晶硅形成，发光单元11和12具有与第一表面相对的第一表面（顶侧表面）和第二表面（下表面） 第一和第二表面的表面，平面取向被设置为（100）面，发光单元11和12在与第一和第二表面正交的方向上的厚度非常薄。

公开(公告)号：US06524903B2

公开(公告)日：2003-02-25

申请号：US09965479

申请日：2001-09-28

申请人： Fumio Ootsuka ,  Takahiro Onai ,  Kazuhiro Ohnishi ,  Shoji Wakahara

发明人： Fumio Ootsuka ,  Takahiro Onai ,  Kazuhiro Ohnishi ,  Shoji Wakahara

IPC分类号： H01L218238

CPC分类号： H01L29/1083 ,  H01L21/76243 ,  H01L21/823807 ,  H01L27/092 ,  H01L27/12

摘要： A method of manufacture of a semiconductor device calls for forming, all over the surface of a substrate below the channel region of a MISFET, a p type impurity layer having a first peak in impurity concentration distribution and another p type impurity layer having a second peak in impurity concentration distribution, each layer having a function of preventing punch-through. Compared with a device having a punch through stopper layer with a pocket structure, the device produced by the present method operates in such a way that fluctuations in the threshold voltage are suppressed. Moreover, with a relative increase in the controllable width of a depletion layer, the sub-threshold swing becomes small, thereby making it possible to prevent lowering of the threshold voltage and to improve the switching rate of the MISFET.

摘要翻译： 制造半导体器件的方法要求在MISFET的沟道区以下的衬底的整个表面上形成杂质浓度分布中具有第一峰的p型杂质层和具有第二峰的另一p型杂质层 杂质浓度分布，每层具有防止穿孔的功能。 与具有袋形结构的穿通止动层的装置相比，通过本方法制造的装置以阈值电压的波动被抑制的方式操作。 此外，随着耗尽层的可控宽度的相对增加，副阈值摆动变小，从而可以防止阈值电压的降低并提高MISFET的开关率。

公开(公告)号：US06313012B1

公开(公告)日：2001-11-06

申请号：US09303080

申请日：1999-04-30

申请人： Masatada Horiuchi ,  Takahiro Onai ,  Katsuyoshi Washio

发明人： Masatada Horiuchi ,  Takahiro Onai ,  Katsuyoshi Washio

IPC分类号： H01L2130

CPC分类号： H01L27/1203 ,  H01L21/84 ,  Y10S438/977

摘要： Disclosed is an multi-layered SOI substrate, which includes a supporting substrate, and a first insulator, a semiconductor film, a second insulator and a single crystalline semiconductor film (SOI film) which are layered on the main surface of the supporting substrate. The SOI substrate is formed by a direct bonding technique, and a bipolar transistor and an MOS transistor are formed using the single crystalline semiconductor film (SOI layer). The extremely shallow junction can be formed without epitaxial growth, thereby significantly increasing the operation speed of the semiconductor device at a low cost.

摘要翻译： 公开了一种多层SOI衬底，其包括支撑衬底和层叠在支撑衬底的主表面上的第一绝缘体，半导体膜，第二绝缘体和单晶半导体膜（SOI膜）。 SOI衬底通过直接接合技术形成，并且使用单晶半导体膜（SOI层）形成双极晶体管和MOS晶体管。 可以在没有外延生长的情况下形成极浅的结，从而以低成本显着提高半导体器件的操作速度。

公开(公告)号：US5430317A

公开(公告)日：1995-07-04

申请号：US122663

申请日：1993-09-17

申请人： Takahiro Onai ,  Katsuyoshi Washio ,  Tohru Nakamura

发明人： Takahiro Onai ,  Katsuyoshi Washio ,  Tohru Nakamura

IPC分类号： H01L21/331 ,  H01L29/73 ,  H01L29/732 ,  H01L27/01 ,  H01L27/12

CPC分类号： H01L29/66265 ,  H01L29/7317

摘要： A transistor is formed on a bonded SOI substrate. A collector electrode is connected to the peripheral sides of the collector areas on the insulator. A first insulator of isolation is formed on the peripheral side of the collector electrode. A base electrode is connected to a base area on the first insulator of isolation. Second insulators of isolation are formed on the peripheral side of a base electrode, and emitter electrode is connected to an emitter area by the second insulators of isolation. The connections between the collector electrode and the collector areas, between the base electrode and the base area, and between the emitter electrode and the emitter area are made under the emitter electrode, so the occupation area is small.

摘要翻译： 在结合的SOI衬底上形成晶体管。 集电极连接到绝缘体上的集电极区域的周边。 在集电极的周边形成第一隔离绝缘体。 基极连接到第一隔离绝缘体上的基极区域。 隔离的第二绝缘体形成在基极的外围侧，并且发射极通过隔离的第二绝缘体连接到发射极区。 集电极与集电极区域之间，基极电极与基极区域之间以及发射极和发射极区域之间的连接形成在发射电极的下方，占用面积小。

公开(公告)号：US07405588B2

公开(公告)日：2008-07-29

申请号：US10933272

申请日：2004-09-03

申请人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

发明人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

IPC分类号： H03K19/173

CPC分类号： G11C23/00 ,  H03K19/1776 ,  H03K19/1778

摘要： The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

摘要翻译： 本发明涉及可以改变功能的LSI，特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。 可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关，即开关在导通状态下具有几欧姆或更小的非常小的电阻，并且在断开状态下具有无限电阻; 被雇用。 通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。 实现了具有高自由度，高速度，小面积化的高自由度的半导体装置。

公开(公告)号：US20050139867A1

公开(公告)日：2005-06-30

申请号：US10933338

申请日：2004-09-03

申请人： Shin-ichi Saito ,  Tadashi Arai ,  Digh Hisamoto ,  Ryuta Tsuchiya ,  Hiroshi Fukuda ,  Takahiro Onai

发明人： Shin-ichi Saito ,  Tadashi Arai ,  Digh Hisamoto ,  Ryuta Tsuchiya ,  Hiroshi Fukuda ,  Takahiro Onai

IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/76 ,  H01L49/00

CPC分类号： H01L49/003

摘要： The Mott transistor capable of operating at a room temperature can be realized by using a self-organized nanoparticle array for the channel portion. The nanoparticle used in the present invention comprises metal and organic molecules, and the size thereof is extremely small, that is, about a few nm. Therefore, the charging energy is sufficiently larger than the thermal energy kBT=26 meV, and the transistor can operate at a room temperature. Also, since the nanoparticles with a diameter of a few nm are arranged in a self-organized manner and the Mott transition can be caused by the change of a number of electrons of the surface density of about 1012 cm−2, the transistor can operate by the gate voltage of about several V.

摘要翻译： 能够在室温下操作的莫特晶体管可以通过使用用于沟道部分的自组织纳米颗粒阵列来实现。 本发明中使用的纳米颗粒包含金属和有机分子，其尺寸非常小，即约几nm。 因此，充电能量足够大于热能k B = 26meV，并且晶体管可以在室温下工作。 此外，由于直径为几nm的纳米颗粒以自组织的方式排列，并且Mott转变可以由表面密度约为10〜12的电子数量的变化引起， cm 2，晶体管可以通过约几V的栅极电压工作。

公开(公告)号：US06667199B2

公开(公告)日：2003-12-23

申请号：US10081227

申请日：2002-02-25

申请人： Kazuyoshi Torii ,  Ryuta Tsuchiya ,  Masatada Horiuchi ,  Takahiro Onai

发明人： Kazuyoshi Torii ,  Ryuta Tsuchiya ,  Masatada Horiuchi ,  Takahiro Onai

IPC分类号： H01L21338

CPC分类号： H01L29/66545 ,  H01L21/823425 ,  H01L21/82345

摘要： The present invention provides a MISFET with a replacement gate electrode, which ensures large ON-current. A semiconductor device, in which on the substrate, first and second field effect transistors are formed, the first field effect transistor is a replacement gate type field effect transistor, and the length of the overlap between a gate electrode and a source/drain diffusion zone of the first field effect transistor correspond to that between a gate electrode and a source/drain diffusion zone of the second field effect transistor.

摘要翻译： 本发明提供了具有替代栅电极的MISFET，其确保大的导通电流。一种其中在衬底上形成第一和第二场效应晶体管的半导体器件，第一场效应晶体管是替代栅极型场效应 并且第一场效应晶体管的栅极电极和源极/漏极扩散区域之间的重叠的长度对应于第二场效应晶体管的栅极电极和源极/漏极扩散区域之间的重叠长度。

公开(公告)号：US6004865A

公开(公告)日：1999-12-21

申请号：US612647

申请日：1996-03-08

申请人： Masatada Horiuchi ,  Takahiro Onai ,  Katsuyoshi Washio

发明人： Masatada Horiuchi ,  Takahiro Onai ,  Katsuyoshi Washio

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L21/331 ,  H01L21/20 ,  H01L21/336

CPC分类号： H01L27/1203 ,  H01L21/84 ,  Y10S438/977

摘要： Disclosed is an multi-layered SOI substrate, which includes a supporting substrate, and a first insulator, a semiconductor film, a second insulator and a single crystalline semiconductor film (SOI film) which are layered on the main surface of the supporting substrate The SOI substrate is formed by a direct bonding technique, and a bipolar transistor and an MOS transistor are formed using the single crystalline semiconductor film (SOI layer). The extremely shallow junction can be formed without epitaxial growth, thereby significantly increasing the operation speed of the semiconductor device at a low cost.

摘要翻译： 公开了一种多层SOI衬底，其包括支撑衬底和层叠在支撑衬底的主表面上的第一绝缘体，半导体膜，第二绝缘体和单晶半导体膜（SOI膜）。SOI 通过直接接合技术形成衬底，并且使用单晶半导体膜（SOI层）形成双极晶体管和MOS晶体管。 可以在没有外延生长的情况下形成极浅的结，从而以低成本显着提高半导体器件的操作速度。

公开(公告)号：US5324983A

公开(公告)日：1994-06-28

申请号：US902592

申请日：1992-06-22

申请人： Takahiro Onai ,  Takeo Shiba ,  Tohru Nakamura ,  Yoichi Tamaki ,  Katsuyoshi Washio ,  Kazuhiro Ohnishi ,  Masayoshi Saitoh

发明人： Takahiro Onai ,  Takeo Shiba ,  Tohru Nakamura ,  Yoichi Tamaki ,  Katsuyoshi Washio ,  Kazuhiro Ohnishi ,  Masayoshi Saitoh

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L29/423 ,  H01L29/73 ,  H01L29/732 ,  H01L27/082 ,  H01L27/102 ,  H01L29/00

CPC分类号： H01L29/66272 ,  H01L29/42304

摘要： A first region of a first conductivity type is formed in the surface of a semiconductor body, and second and third regions of a second conductivity type are formed on and under, respectively, of the first region. An electrode region formed on a first insulating film formed on the semiconductor body is connected electrically to the first region. The electrode region is defined as having an elongated first part an upper surface of which is connected to an electrode, and having a second, different part which has a substantially constant width and which width is substantially equal to the thickness of the first portion of the electrode region. A metal silicide film is formed over the upper surface of the first portion of the electrode region. The first, second and third regions can be base, emitter and collector regions, respectively, of a bipolar transistor formed in an island region of an epitaxially grown layer on a semiconductor substrate.

摘要翻译： 第一导电类型的第一区域形成在半导体本体的表面中，并且第二导电类型的第二和第三区域分别形成在第一区域的上下。 形成在形成在半导体主体上的第一绝缘膜上的电极区域与第一区域电连接。 电极区域被限定为具有细长的第一部分，其上表面连接到电极，并且具有第二不同部分，其具有基本恒定的宽度，并且该宽度基本上等于第一部分的厚度 电极区域。 在电极区域的第一部分的上表面上形成金属硅化物膜。 第一，第二和第三区域可以分别是形成在半导体衬底上的外延生长层的岛区中的双极晶体管的基极，发射极和集电极区域。

公开(公告)号：US20050104621A1

公开(公告)日：2005-05-19

申请号：US10933272

申请日：2004-09-03

申请人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

发明人： Takayuki Kawahara ,  Masayuki Miyazaki ,  Yasushi Goto ,  Natsuki Yokoyama ,  Takahiro Onai

IPC分类号： H01L27/04 ,  H01L21/82 ,  H01L21/822 ,  H03K19/173 ,  H03K19/177

CPC分类号： G11C23/00 ,  H03K19/1776 ,  H03K19/1778

摘要： The present invention relates to an LSI in which functions can be changed, and realizes, particularly, a system LSI in which functions are changed by changing connections of the circuit by use of MEMS switches. A bistable MEMS switch which can maintain states, and exhibits optimal stitching property, i.e., the switch has a very small resistance of several Ω or less in an on-state, and has an infinite resistance in an off-state; is employed. An element in which functions can be changed during operation, is produced by utilizing a wiring layer of a CMOS semiconductor to form the MEMS switch. A semiconductor device exhibiting high-degree of freedom for changing functions, high-speed, and having small area, is realized.

摘要翻译： 本发明涉及可以改变功能的LSI，特别是实现通过使用MEMS开关改变电路的连接来改变功能的系统LSI。 可以保持状态并且表现出最佳缝合性能的双稳态MEMS开关，即开关在导通状态下具有几欧姆或更小的非常小的电阻，并且在断开状态下具有无限电阻; 被雇用。 通过使用CMOS半导体的布线层来形成功能可以在操作期间改变的元件来形成MEMS开关。 实现了具有高自由度，高速度，小面积化的高自由度的半导体装置。