公开(公告)号：US20230329007A1

公开(公告)日：2023-10-12

申请号：US18176750

申请日：2023-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hajun SUNG ,  Youngjae Kang ,  Bonwon Koo ,  Yongyoung Park ,  Dongho Ahn ,  Kiyeon Yang ,  Wooyoung Yang ,  Changseung Lee ,  Minwoo Choi

IPC: H10B63/00 ,  H10B61/00

CPC classification number: H10B63/24 ,  H10B61/10 ,  H10B63/80

Abstract: A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

公开(公告)号：US11693237B2

公开(公告)日：2023-07-04

申请号：US17519347

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub Lee ,  Reehyang Kim ,  Jonghwa Shin ,  Kiyeon Yang ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee ,  Narae Han

IPC: G02B27/00 ,  G02B1/00 ,  G02B3/02 ,  G02B5/08

CPC classification number: G02B27/0025 ,  G02B1/002 ,  G02B3/02 ,  G02B5/0825

Abstract: A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

公开(公告)号：US11677036B2

公开(公告)日：2023-06-13

申请号：US17707076

申请日：2022-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub Lee ,  Woong Ko ,  Changseung Lee ,  Hongkyu Park ,  Chanwook Baik ,  Hongseok Lee ,  Wonjae Joo

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/035281 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/0288 ,  H01L31/022408 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864

Abstract: A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

公开(公告)号：US11262606B2

公开(公告)日：2022-03-01

申请号：US16857756

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon Yang ,  Youngsun Choi ,  Seokho Song ,  Jaewoong Yoon ,  Choloong Han ,  Yongsung Kim ,  Jeongyub Lee ,  Changseung Lee

IPC: G02B6/26 ,  G02B6/12 ,  G02B1/04 ,  G02B6/27 ,  G02F1/09 ,  G02B6/293 ,  G02B6/42 ,  G02F1/095 ,  G02F1/31

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US11194153B2

公开(公告)日：2021-12-07

申请号：US16421857

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub Lee ,  Reehyang Kim ,  Jonghwa Shin ,  Kiyeon Yang ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee ,  Narae Han

IPC: G02B27/00 ,  G02B1/00 ,  G02B3/02 ,  G02B5/08

Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

公开(公告)号：US11158838B2

公开(公告)日：2021-10-26

申请号：US16268805

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooyoung Yang ,  Wenxu Xianyu ,  Yongsung Kim ,  Changseung Lee

IPC: H01L51/52 ,  C23C16/455 ,  C23C16/50 ,  H01L51/10 ,  C23C18/12

Abstract: Provided are a flexible organic-inorganic passivation film and a method of forming the same. The flexible organic-inorganic passivation film includes an organic-inorganic passivation film formed by alternately and repeatedly forming an organic film and an inorganic film on a substrate. The organic film is formed by stacking plasma-process generated material on a material layer thereunder. The plasma-process generated material is formed by plasma processing a hydrocarbon or a fluorocarbon.

公开(公告)号：US20200096833A1

公开(公告)日：2020-03-26

申请号：US16406677

申请日：2019-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub Lee ,  Yongsung Kim ,  Jaekwan Kim ,  Changseung Lee

IPC: G02F1/21

Abstract: Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.

公开(公告)号：US09595401B1

公开(公告)日：2017-03-14

申请号：US15066780

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jooho Lee ,  Yongsung Kim ,  Changseung Lee

IPC: H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01G11/86 ,  H01G11/36 ,  C23C16/26 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01G11/86 ,  H01G11/26 ,  H01G11/36 ,  H01G11/46 ,  H01G11/70 ,  Y02E60/13

Abstract: Example embodiments relate to a method of fabricating a graphene nano-mesh by selectively growing an oxide layer on a defect site of a graphene layer and etching the oxide layer to form the graphene nano-mesh. The method includes forming a graphene layer on a catalyst layer, forming an oxide layer on a defect site of the graphene layer, forming the graphene nano-mesh including a plurality of openings by etching the oxide layer, and transferring, after removing the catalyst layer, the graphene nano-mesh onto a substrate.

Abstract translation: 示例性实施例涉及通过选择性地生长石墨烯层的缺陷部位上的氧化物层并蚀刻氧化物层以形成石墨烯纳米网来制造石墨烯纳米网的方法。 该方法包括在催化剂层上形成石墨烯层，在石墨烯层的缺陷部位形成氧化层，通过蚀刻氧化层形成包括多个开口的石墨烯纳米网，并且在除去催化剂层之后转移 ，石墨烯纳米网到基底上。