公开(公告)号：US20220223751A1

公开(公告)日：2022-07-14

申请号：US17707076

申请日：2022-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Woong KO ,  Changseung LEE ,  Hongkyu PARK ,  Chanwook BAIK ,  Hongseok LEE ,  Wonjae JOO

IPC: H01L31/0352 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/105 ,  H01L31/18

Abstract: A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

公开(公告)号：US20220140003A1

公开(公告)日：2022-05-05

申请号：US17244212

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Bonwon KOO ,  Chungman KIM ,  Kwangmin PARK ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE ,  Minwoo CHOI

IPC: H01L27/24 ,  H01L27/22 ,  H01L45/00 ,  H01L43/02 ,  H01L43/12

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

公开(公告)号：US20220082822A1

公开(公告)日：2022-03-17

申请号：US17519347

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jeongyub LEE ,  Reehyang KIM ,  Jonghwa SHIN ,  Kiyeon YANG ,  Yongsung KIM ,  Jaekwan KIM ,  Changseung LEE ,  Narae HAN

IPC: G02B27/00 ,  G02B5/08 ,  G02B3/02 ,  G02B1/00

Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.

公开(公告)号：US20220026605A1

公开(公告)日：2022-01-27

申请号：US17499170

申请日：2021-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekwan KIM ,  Jeongyub LEE ,  Seunghoon HAN ,  Yongsung KIM ,  Byunghoon NA ,  Jangwoo YOU ,  Changseung LEE

IPC: G02B3/08 ,  G02B1/00

Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.

公开(公告)号：US20210126142A1

公开(公告)日：2021-04-29

申请号：US16848165

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Woong KO ,  Changseung LEE ,  Hongkyu PARK ,  Chanwook BAIK ,  Hongseok LEE ,  Wonjae JOO

IPC: H01L31/0352 ,  H01L31/105 ,  H01L27/144 ,  H01L31/0288 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/18

Abstract: A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.

公开(公告)号：US20210088694A1

公开(公告)日：2021-03-25

申请号：US16789675

申请日：2020-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Kideok BAE ,  Eunhyoung CHO

IPC: G02B1/14 ,  G02B1/00 ,  G02B27/10 ,  G02B5/20

Abstract: An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.

公开(公告)号：US20190326555A1

公开(公告)日：2019-10-24

申请号：US16268805

申请日：2019-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Wenxu XIANYU ,  Yongsung KIM ,  Changseung LEE

IPC: H01L51/52 ,  H01L51/10 ,  C23C16/50 ,  C23C16/455

Abstract: Provided are a flexible organic-inorganic passivation film and a method of forming the same. The flexible organic-inorganic passivation film includes an organic-inorganic passivation film formed by alternately and repeatedly forming an organic film and an inorganic film on a substrate. The organic film is formed by stacking plasma-process generated material on a material layer thereunder. The plasma-process generated material is formed by plasma processing a hydrocarbon or a fluorocarbon.

公开(公告)号：US20180010245A1

公开(公告)日：2018-01-11

申请号：US15368892

申请日：2016-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho LEE ,  Yongsung KIM ,  Sanghoon SONG ,  Wooyoung YANG ,  Changseung LEE ,  Sungjin LIM ,  Junsik HWANG

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/06 ,  H01M4/04 ,  C23C16/44

CPC classification number: C23C16/34 ,  C23C16/045 ,  C23C16/06 ,  C23C16/308 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/515 ,  H01J37/32 ,  H01J37/3244 ,  H01J2237/3321 ,  H01M4/0428 ,  H01M4/13 ,  H01M10/052 ,  H01M2220/30 ,  H01M2300/0068

Abstract: A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.