公开(公告)号：US20190120689A1

公开(公告)日：2019-04-25

申请号：US16165014

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok LEEM ,  Gae Hwang LEE ,  Yong Wan JIN ,  Tae Yon LEE

IPC: G01J1/42 ,  G01J1/44 ,  G01J1/04 ,  H01L27/146 ,  H01L27/30 ,  G06K9/00

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

公开(公告)号：US20170154929A1

公开(公告)日：2017-06-01

申请号：US15334586

申请日：2016-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok LEEM ,  Seon-Jeong Lim ,  Kwang Hee Lee ,  Xavier Bulliard ,  Yong Wan Jin ,  Tadao Yagi

IPC: H01L27/30 ,  H01L51/44 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L27/307 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0065 ,  H01L51/424 ,  H01L51/4293 ,  H01L51/442 ,  H01L51/5004 ,  H01L2251/303 ,  Y02E10/549

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, photoelectronic conversion layer between the first electrode and the second electrode and including a first material and a second material providing a p-n junction and an interlayer being adjacent to the first electrode between the first electrode and the photoelectronic conversion layer and including a third material, wherein the first material and the third material are an organic material having each energy bandgap of about 1.7 eV to about 2.3 eV, and an image sensor including the same is provided.

公开(公告)号：US20170094198A1

公开(公告)日：2017-03-30

申请号：US15183857

申请日：2016-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Young Yun ,  Gae Hwang LEE ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H04N5/33 ,  H01L27/30 ,  H04N9/097 ,  H04N5/238 ,  H04N5/225 ,  G02B5/20

CPC classification number: H04N5/332 ,  G02B5/208 ,  G03B11/00 ,  G03B13/36 ,  H01L27/307 ,  H04N5/2254 ,  H04N5/2258 ,  H04N5/238 ,  H04N9/097

Abstract: An electronic device includes a lens, an optical filter asymmetric to an optical axis of the lens, and an image sensor including a visible light image sensor and a non-visible light image sensor. The optical filter has an opening and is configured to transmit visible light and block at least one type of non-visible light. The visible light image sensor is configured to sense the visible light and the non-visible light image sensor is configured to sense the at least one type of non-visible light.

公开(公告)号：US20160126470A1

公开(公告)日：2016-05-05

申请号：US14931413

申请日：2015-11-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Takkyun RO ,  Seon-Jeong LIM ,  Kyung Bae PARK ,  Sung Young YUN ,  Gae Hwang LEE ,  Dong-Seok LEEM ,  Yong Wan JIN ,  Yagi TADAO ,  Moon Gyu HAN ,  Chuljoon HEO

IPC: H01L51/00 ,  C07D333/36 ,  H01L27/30

CPC classification number: H01L51/0061 ,  C07D333/36 ,  C09B47/00 ,  C09B57/008 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/4293 ,  H01L51/447 ,  H01L2251/308

Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1. An organic photoelectric device includes a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including the compound represented by Chemical Formula 1.

Abstract translation: 有机光电器件的化合物由化学式1表示。有机光电器件包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的有源层，活性层包括由 化学式1。

公开(公告)号：US20160020415A1

公开(公告)日：2016-01-21

申请号：US14587394

申请日：2014-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tadao YAGI ,  Sakurai RIE ,  Kyung-bae PARK ,  Sung-young YUN ,  Gae Hwang LEE ,  Kwang-hee LEE ,  Dong-Seok LEEM ,  Bulliard XAVIER ,  Chul-joon HEO ,  Yongwan JIN

IPC: H01L51/00 ,  H01L27/30 ,  C07F7/08

CPC classification number: H01L51/0094 ,  C07F7/0834 ,  H01L27/301 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/442 ,  H01L2251/308

Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

Abstract translation: 示例性实施方案涉及包括第一电极和彼此面对的第二电极的有机光电子器件，以及在第一电极和第二电极之间的有源层，其中活性层包括由以下化学式1表示的第一化合物和 包括有机光电子器件的图像传感器。

公开(公告)号：US20160020258A1

公开(公告)日：2016-01-21

申请号：US14604185

申请日：2015-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Satoh RYUICHI ,  Gae Hwang LEE ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Yong Wan JIN ,  Tadao YAGI ,  Chul Joon HEO

IPC: H01L27/30 ,  H01L51/00

CPC classification number: H01L27/307 ,  H01L25/167 ,  H01L27/30 ,  H01L27/302 ,  H01L33/06 ,  H01L51/0046 ,  H01L51/0068 ,  H01L51/008 ,  H01L51/0094 ,  H01L51/424 ,  H01L51/4246 ,  H01L51/4253 ,  H01L51/44 ,  H01L51/442 ,  H01L51/447 ,  Y02E10/549

Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Abstract translation: 示例实施例涉及一种有机光电子器件，其包括第一电极，第一电极上的光吸收层，并且包括第一p型光吸收材料和第一n型光吸收材料，光吸收辅助材料 并且包括比光吸收层的FWHM具有更小的半高全宽（FWHM）的第二p型光吸收材料或第二n型光吸收材料，a 光吸收辅助层上的电荷辅助层和电荷辅助层上的第二电极，以及包含该辅助层的图像传感器。

公开(公告)号：US20150162548A1

公开(公告)日：2015-06-11

申请号：US14521840

申请日：2014-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seon-Jeong LIM ,  Kyung Bae PARK ,  Dong-Seok LEEM ,  Moon Gyu HAN ,  Kyu Sik KIM ,  Takkyun RO ,  Kwang Hee LEE ,  Yong Wan JIN ,  Chul Joon HEO

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/44

CPC classification number: H01L51/0072 ,  H01L27/307 ,  H01L51/001 ,  H01L51/008 ,  H01L51/4253 ,  H01L2251/308

Abstract: Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.

Abstract translation: 公开了一种有机光电子器件，其包括彼此面对的第一电极和第二电极以及置于第一电极和第二电极之间的有源层，其中有源层包括由式C22R1-R12O2N2表示的p型半导体化合物和 在约500nm至约600nm的波长区域具有最大吸收峰的n型半导体化合物和包括该有机光电子器件的图像传感器。

公开(公告)号：US20140239278A1

公开(公告)日：2014-08-28

申请号：US14186075

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae PARK ,  Kyu Sik KIM ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Seon-Jeong LIM

IPC: H01L51/44 ,  H01L27/30

Abstract: Disclosed are a photoelectronic device including a first electrode including a first metal; an active layer disposed between the first electrode and a second electrode; and a diffusion barrier layer disposed between the first electrode and the active layer; the diffusion barrier layer including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode and the diffusion barrier layer are configured to transmit light, and an image sensor including the photoelectronic device.

Abstract translation: 公开了一种光电子器件，其包括：第一电极，其包括第一金属; 设置在所述第一电极和第二电极之间的有源层; 以及设置在所述第一电极和所述有源层之间的扩散阻挡层; 所述扩散阻挡层包括第二金属，其中所述第二金属具有低于所述第一金属的热扩散率的热扩散率，并且其中所述第一电极和所述扩散阻挡层被配置为透射光;以及图像传感器，包括 光电子器件。

公开(公告)号：US20230125778A1

公开(公告)日：2023-04-27

申请号：US17939216

申请日：2022-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohkyu KWON ,  Rae Sung KIM ,  Dong-Seok LEEM ,  Sangdong KIM ,  Insun PARK

IPC: C07D409/14 ,  C07D409/04 ,  H01L51/42 ,  H01L51/00 ,  H01L51/50 ,  H01L33/50

Abstract: Disclosed are a compound represented by Chemical Formula 1, and a film, an infrared sensor, and an electronic device including the compound. In Chemical Formula 1, Q1, Q2, X1, X2, R1, R2, and A1 are the same as in the specification.

公开(公告)号：US20220059772A1

公开(公告)日：2022-02-24

申请号：US17363543

申请日：2021-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohkyu KWON ,  Changki KIM ,  Hyesung CHOI ,  Hwang Suk KIM ,  Insun PARK ,  Dong-Seok LEEM

IPC: H01L51/00 ,  C07D409/14 ,  C07D517/04 ,  C07D495/14

Abstract: A compound is represented by Chemical Formula 1. In Chemical Formula 1, R1 to R4, R11a to R14c, and n are the same as defined in the detailed description.