SENSORS AND ELECTRONIC DEVICES
    7.
    发明申请

    公开(公告)号:US20220013585A1

    公开(公告)日:2022-01-13

    申请号:US17485737

    申请日:2021-09-27

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

    SENSORS AND ELECTRONIC DEVICES
    8.
    发明申请

    公开(公告)号:US20210036061A1

    公开(公告)日:2021-02-04

    申请号:US16788857

    申请日:2020-02-12

    Abstract: A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

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