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    INFRARED ABSORPTION COMPOSITION, AND PHOTOELECTRIC DEVICE, ORGANIC SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME
    4.
    发明申请
    INFRARED ABSORPTION COMPOSITION, AND PHOTOELECTRIC DEVICE, ORGANIC SENSOR, AND ELECTRONIC DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210367166A1

    公开(公告)日：2021-11-25

    申请号：US17323294

    申请日：2021-05-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Insun PARK ,  Rae Sung KIM ,  Dong-Seok LEEM

    IPC: H01L51/00

    Abstract: Disclosed are an infrared absorption composition, and a photoelectric device, an organic sensor, and an electronic device including the same. The infrared absorption composition includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound. The n-type semiconductor compound includes a compound represented by Chemical Formula 2A, a compound represented by Chemical Formula 2B, a compound represented by Chemical Formula 2C, a fullerene derivative, or a combination thereof. The p-type semiconductor compound and the n-type semiconductor compound provide a bulk heterojunction (BHJ) structure.

    SENSOR AND ELECTRONIC DEVICE
    7.
    发明申请
    SENSOR AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220131098A1

    公开(公告)日：2022-04-28

    申请号：US17509451

    申请日：2021-10-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  Ohkyu KWON ,  Changki KIM ,  Insun PARK

    IPC: H01L51/42 ,  H01L51/44 ,  H01L51/00

    Abstract: A sensor includes first and second electrodes, and an infrared photoelectric conversion layer between the first and second electrodes, the infrared photoelectric conversion layer being configured to absorb light in at least a portion of an infrared wavelength spectrum and convert the absorbed light to an electrical signal. The infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in an infrared wavelength spectrum, a second material forming a pn junction with the first material, and a third material having an energy band gap greater than the energy band gap of the first material by greater than or equal to about 1.0 eV. The first material, the second material, and the third material are different from each other, and each of the first material, the second material, and the third material is a non-polymeric material.

    SENSORS AND ELECTRONIC DEVICES
    8.
    发明申请
    SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210343891A1

    公开(公告)日：2021-11-04

    申请号：US17236439

    申请日：2021-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Seok LEEM ,  Rae Sung KIM ,  In Sun PARK ,  Ohkyu KWON ,  Changki KIM

    IPC: H01L31/101 ,  H01L31/0232

    Abstract: A sensor includes a first electrode, a second electrode facing the first electrode, and a light absorbing layer between the first electrode and the second electrode. The light absorbing layer may have a first absorption spectrum having a first absorption peak in a first infrared wavelength region and a second absorption peak in a second infrared wavelength region, the second infrared wavelength region being a longer wavelength region than the first infrared wavelength region. The second absorption spectrum does not at least partially overlap with the first absorption spectrum. The second absorption spectrum may have a lower absorption intensity than the first absorption spectrum. An external quantum efficiency (EQE) spectrum that is amplified in the second infrared wavelength region is exhibited in the sensor.

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