公开(公告)号：US11217531B2

公开(公告)日：2022-01-04

申请号：US16884590

申请日：2020-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook Shin ,  Yonghoon Kim ,  Hyeonjin Shin ,  Hyunjae Song ,  Changseok Lee ,  Changhyun Kim ,  Yeonchoo Cho

IPC: H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US11094538B2

公开(公告)日：2021-08-17

申请号：US16260403

申请日：2019-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Changhyun Kim ,  Kaoru Yamamoto ,  Changseok Lee ,  Hyunjae Song ,  Eunkyu Lee ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Sungjoo An

IPC: H01L21/02 ,  H01L29/16

Abstract: Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).

公开(公告)号：US10971451B2

公开(公告)日：2021-04-06

申请号：US16215899

申请日：2018-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook Shin ,  Yonghoon Kim ,  Hyeonjin Shin ,  Hyunjae Song ,  Changseok Lee ,  Changhyun Kim ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US10134628B2

公开(公告)日：2018-11-20

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Seongjun Park ,  Keunwook Shin ,  Hyeonjin Shin ,  Jaeho Lee ,  Changseok Lee ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L21/285 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

公开(公告)号：US20170025508A1

公开(公告)日：2017-01-26

申请号：US15113079

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Changseok Lee ,  Seongjun Park

IPC: H01L29/417 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L29/41725 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/417 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having the electrode connecting structure. The electrode connecting structure may include an adhesion layer formed of a two-dimensional material provided between the graphene layer and the metal layer. The graphene layer may be a diffusion barrier, and the adhesion layer may stably maintain the interface characteristics of the graphene layer and the metal layer when the metal layer is formed on a surface of the graphene layer.

Abstract translation: 提供一种电极连接结构，其包括形成在石墨烯层和金属层之间的粘合层和具有电极连接结构的电子器件。 电极连接结构可以包括由设置在石墨烯层和金属层之间的二维材料形成的粘合层。 石墨烯层可以是扩散阻挡层，并且当金属层形成在石墨烯层的表面上时，粘合层可以稳定地保持石墨烯层和金属层的界面特性。

公开(公告)号：US12080649B2

公开(公告)日：2024-09-03

申请号：US17893349

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Hyeonjin Shin ,  Minhyun Lee ,  Changseok Lee ,  Kyung-Eun Byun ,  Hyeonsuk Shin ,  Seokmo Hong

IPC: H01L23/532 ,  H01L23/522 ,  H10B12/00

CPC classification number: H01L23/5329 ,  H01L23/5226 ,  H10B12/30

Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.

公开(公告)号：US11682622B2

公开(公告)日：2023-06-20

申请号：US17165246

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook Shin ,  Yonghoon Kim ,  Hyeonjin Shin ,  Hyunjae Song ,  Changseok Lee ,  Changhyun Kim ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/53276 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5226

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US11626282B2

公开(公告)日：2023-04-11

申请号：US16678115

申请日：2019-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu Lee ,  Kyung-Eun Byun ,  Hyunjae Song ,  Hyeonjin Shin ,  Changhyun Kim ,  Keunwook Shin ,  Changseok Lee ,  Alum Jung

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US11624127B2

公开(公告)日：2023-04-11

申请号：US17082502

申请日：2020-10-28

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Changseok Lee ,  Hyeonsuk Shin ,  Hyeonjin Shin ,  Seokmo Hong ,  Minhyun Lee ,  Seunggeol Nam ,  Kyungyeol Ma

IPC: C30B29/38 ,  H01L21/02

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

公开(公告)号：US11149346B2

公开(公告)日：2021-10-19

申请号：US16244906

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Hyeonjin Shin ,  Kyung-Eun Byun ,  Keunwook Shin ,  Changseok Lee ,  Seunggeol Nam ,  Sungjoo An ,  Janghee Lee ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/26 ,  C01B32/186 ,  C23C14/02 ,  C23C16/56 ,  C23C14/06

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.