公开(公告)号：US20200065635A1

公开(公告)日：2020-02-27

申请号：US16408702

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SNU R&DB FOUNDATION

Inventor： Bee LIM ,  Changhyun KIM ,  Kyoung MU LEE

IPC: G06K9/62 ,  G06K9/46 ,  G06N3/08 ,  G06T7/77 ,  G06K9/66

Abstract: A processor-implemented object detection method is provided. The method receives an input image, generates a latent variable that indicates a feature distribution of the input image, and detects an object in the input image based on the generated latent variable.

公开(公告)号：US20250142894A1

公开(公告)日：2025-05-01

申请号：US18752024

申请日：2024-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Huije RYU ,  Junyoung KWON ,  Changhyun KIM ,  Minsu SEOL

IPC: H01L29/786 ,  H01L21/3115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device may include a two-dimensional (2D) material layer extending in a first direction, a source electrode and a drain electrode each electrically connected to the 2D material layer, an insulating layer arranged on the 2D material layer, and a gate electrode arranged apart from the 2D material layer in a second direction perpendicular to the first direction, wherein the insulating layer includes a dopant.

公开(公告)号：US20250107208A1

公开(公告)日：2025-03-27

申请号：US18976637

申请日：2024-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Seunggeol NAM ,  Keunwook SHIN ,  Dohyun LEE

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.

公开(公告)号：US20240304622A1

公开(公告)日：2024-09-12

申请号：US18416403

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd. ,  THE UNIVERSITY OF CHICAGO

Inventor： Minsu SEOL ,  Ce LIANG ,  Jiwoong PARK ,  Kyung-Eun BYUN ,  Changhyun KIM

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/8256 ,  H01L29/24 ,  H01L29/66 ,  H01L29/76

CPC classification number: H01L27/092 ,  H01L21/02568 ,  H01L21/8256 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7606

Abstract: Provided are a semiconductor device including a two-dimensional material and a method of manufacturing the semiconductor device. The semiconductor device may include a substrate, first and second two-dimensional material layers on the substrate and junctioned to each other in a lateral direction to form a coherent interface, a first source electrode and a first drain electrode on the first two-dimensional material layer, a first gate electrode between the first source electrode and the first drain electrode, a second source electrode and a second drain electrode on the second two-dimensional material layer, and a second gate electrode between the second source electrode and the second drain electrode.

公开(公告)号：US20240021676A1

公开(公告)日：2024-01-18

申请号：US18331463

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Minsu SEOL ,  Junyoung KWON ,  Keunwook SHIN ,  Minseok YOO

IPC: H01L29/18 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417 ,  H01L29/06 ,  H01L29/775 ,  H10B10/00 ,  H10B43/27

CPC classification number: H01L29/18 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/41733 ,  H01L29/0673 ,  H01L29/775 ,  H10B10/125 ,  H10B43/27

Abstract: A semiconductor device includes a channel including a two-dimensional (2D) semiconductor material, a source electrode and a drain electrode electrically connected to opposite sides of the channel, respectively, a transition metal oxide layer on the channel and including a transition metal oxide, a dielectric layer on the transition metal oxide layer and including a high-k material, and a gate electrode on the dielectric layer.

公开(公告)号：US20230123234A1

公开(公告)日：2023-04-20

申请号：US17703201

申请日：2022-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Kyung-Eun BYUN ,  Sangsoo LEE ,  Changhyun KIM ,  Changseok LEE

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/11597 ,  H01L27/11582

Abstract: Provided is a thin film structure including a substrate, a metal layer on the substrate and spaced apart from the substrate, and a two-dimensional material layer between the substrate and the metal layer. The two-dimensional material layer may be configured to limit and/or block an electron transfer between the substrate and the metal layer. A resistivity of a metal layer on the two-dimensional material layer may be lowered by the two-dimensional material layer.

公开(公告)号：US20230081960A1

公开(公告)日：2023-03-16

申请号：US17697400

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Sangwon KIM ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/10 ,  H01L29/423

Abstract: A vertical channel transistor includes a first source/drain electrode; a second source/drain electrode spaced apart from the first source/drain electrode in a first direction; a first channel pattern between the first source/drain electrode and the second source/drain electrode; a first gate electrode on a side surface of the first channel pattern; a first gate insulation layer between the first channel pattern and the first gate electrode; and a first graphene insertion layer between the first source/drain electrode and the first channel pattern.

公开(公告)号：US20220328671A1

公开(公告)日：2022-10-13

申请号：US17539768

申请日：2021-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Hyeonjin SHIN ,  Minhyun LEE ,  Taejin CHOI ,  Sangwon KIM ,  Bongseob YANG ,  Eunkyu LEE

IPC: H01L29/76 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24

Abstract: A field effect transistor structure is disclosed. The field effect transistor structure includes: a fin-shaped channel protruding from a substrate and extending in one direction; a source electrode on one side of the fin-shaped channel; a drain electrode separated from the source electrode with the fin-shaped channel therebetween; a gate insulating film surrounding side and upper surfaces of the fin-shaped channel; a gate electrode on the gate insulating film; and a two-dimensional semiconductor material layer between the gate insulating film and the gate electrode.

公开(公告)号：US20210384583A1

公开(公告)日：2021-12-09

申请号：US17250634

申请日：2019-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soonwan CHUNG ,  Myungheon KANG ,  Junho PARK ,  Junghyun LEE ,  Changhyun KIM

IPC: H01M50/293 ,  H01M50/247 ,  H01M50/202 ,  H04M1/02 ,  C09J109/06 ,  C09J123/22

Abstract: An electronic device, according to various embodiments of the present disclosure, may comprise: a housing including a seating groove therein; a battery seated in the seating groove, at least a partial area of which includes a curved surface; and an adhesive member disposed between the battery and the seating groove and formed along at least a portion of an edge of the battery. The adhesive member may be formed having varied predetermined thicknesses, corresponding to a position of the battery.

公开(公告)号：US20200005098A1

公开(公告)日：2020-01-02

申请号：US16452879

申请日：2019-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Mo SUNG ,  Changhyun KIM

IPC: G06K9/66

Abstract: A method and apparatus for building an image model, where the apparatus generates a target image model that includes layers duplicated from a layers of a reference image model and an additional layer, and trains the additional layer.