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    SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL
    1.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL 有权

    公开(公告)号：US20250126886A1

    公开(公告)日：2025-04-17

    申请号：US18917227

    申请日：2024-10-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Eun BYUN ,  Minsu SEOL ,  Junyoung KWON ,  Huije RYU

    IPC: H01L27/092 ,  H01L29/24 ,  H01L29/76 ,  H01L29/786

    Abstract: Provided is a semiconductor device including a two-dimensional (2D) material. The semiconductor device may include a first channel including a first 2D material layer, a second channel apart from the first channel in a first direction and including a second 2D material layer, a common gate electrode between the first channel and the second channel, a first electrode and a second electrode apart from each other and respectively in contact with the first channel and the second channel, and a common electrode apart from the first electrode and the second electrode in a second direction intersecting the first direction and in contact with the first channel and the second channel. One of the first channel and the second channel may be an n-type channel and the other one may be a p-type channel.

    SEMICONDUCTOR MEMORY DEVICE
    4.
    发明公开
    SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20240349490A1

    公开(公告)日：2024-10-17

    申请号：US18501980

    申请日：2023-11-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Huije RYU ,  Hyungki CHO

    IPC: H10B12/00

    CPC classification number: H10B12/482 ,  H10B12/315 ,  H10B12/488

    Abstract: A semiconductor memory device includes a bit line that extends in a first direction, semiconductor patterns disposed on the bit line and spaced apart from each other in the first direction and each including a first vertical part, a second vertical part, and a horizontal part, first and second word lines disposed on the horizontal part and respectively adjacent to the first and second vertical parts, and a semiconductor dielectric pattern disposed on the bit line and between the semiconductor patterns. The semiconductor dielectric pattern includes a lower capping pattern, sidewall dielectric patterns spaced apart from each other in the first direction on the lower capping pattern, an air gap between the sidewall dielectric patterns, and an upper capping pattern disposed on the sidewall dielectric patterns. Top surfaces of the sidewall dielectric patterns are at the same height as top surfaces of the first and second vertical parts.

    PANEL FOR ELECTRONIC DEVICE AND ELECTRONIC DEVICE
    7.
    发明申请
    PANEL FOR ELECTRONIC DEVICE AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20250098390A1

    公开(公告)日：2025-03-20

    申请号：US18653130

    申请日：2024-05-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joonseok KIM ,  Joonyun KIM ,  Huije RYU ,  Chang Seok LEE ,  Luhing HU

    IPC: H01L27/15 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12 ,  H01L33/62

    Abstract: A panel includes: a substrate, unit pixels arranged repeatedly on the substrate, and unit pixel circuits including a unit pixel circuit repeatedly arranged on the substrate and electrically connected to a unit pixel. Each unit pixel includes a red sub-pixel including a red optoelectronic element configured to display red color or detect red light, a green sub-pixel including a green optoelectronic element configured to display green color or detect green light, and a blue sub-pixel including a blue optoelectronic element configured to display blue color or detect blue light. Each unit pixel circuit includes a red pixel circuit electrically connected to the red optoelectronic element, a green pixel circuit electrically connected to the green optoelectronic element, and a blue pixel circuit electrically connected to the blue optoelectronic element. The red pixel circuit, the green pixel circuit, and the blue pixel circuit are stacked along a thickness direction of the substrate.

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