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71 条记录 (耗时 0.023 秒)

    Method for making laser synthesized ceramic electronic devices and circuits
    31.
    发明授权
    Method for making laser synthesized ceramic electronic devices and circuits 失效
    制造激光合成陶瓷电子器件和电路的方法

    公开(公告)号：US6054375A

    公开(公告)日：2000-04-25

    申请号：US88046

    申请日：1998-06-01

    申请人： Nathaniel R. Quick

    发明人： Nathaniel R. Quick

    IPC分类号： C23C16/04 ,  H01L21/04 ,  H01L21/20 ,  H01L21/48 ,  H01L21/768 ,  H01L21/82 ,  H01L23/525 ,  H05K3/10 ,  H01L21/26 ,  H01L21/42

    CPC分类号： C23C16/047 ,  H01L21/0445 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/4846 ,  H01L21/76888 ,  H01L21/76894 ,  H01L21/8213 ,  H01L23/525 ,  H01L23/5258 ,  H01L29/66068 ,  H05K3/105 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2924/0002

    摘要： Laser apparatus and methods are provided for synthesizing areas of ceramic substrates or thin films, such ceramics as Silicon Carbide and Aluminum Nitride, to produce electronic devices and circuits as integral electron circuit components thereof. Circuit components such as conductive tabs, interconnects, wiring patterns, resistors, capacitors, insulating layers and semiconductors are synthesized on the surfaces and within the body of such ceramics. Selected groupings and arrangements of these electronic circuit components within the substrates or thin films provide a wide range of circuits for applications such as digital logic elements and circuits, transistors, sensors for measurements and monitoring effects of chemical and/or physical reactions and interactions of materials, gases, devices or circuits that may utilize sensors. The electronic elements and components offer the advantages of providing thermal compatibilities with the substrate, since they are an integral part thereof and consequently are compatible therewith regarding thermal coefficients of expansion and thermal dissipation.

    摘要翻译： 提供激光装置和方法来合成陶瓷基片或薄膜，例如碳化硅和氮化铝等陶瓷的区域，以制造作为其电子电路组件的电子器件和电路。 诸如导电片，互连件，布线图案，电阻器，电容器，绝缘层和半导体的电路元件被合成在这种陶瓷的表面和体内。 这些电子电路组件在衬底或薄膜内的选择分组和布置为应用提供了广泛的电路，例如数字逻辑元件和电路，晶体管，用于测量和监测化学和/或物理反应和材料相互作用的传感器 ，可能利用传感器的气体，设备或电路。 电子元件和组件提供了提供与基底的热相容性的优点，因为它们是其组成部分，因此与热膨胀系数和散热系数相容。

    Capacitor and method of making
    32.
    发明授权
    Capacitor and method of making 失效
    电容器和制作方法

    公开(公告)号：US6046091A

    公开(公告)日：2000-04-04

    申请号：US94395

    申请日：1998-06-09

    申请人： Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

    发明人： Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

    IPC分类号： H01G4/28 ,  H01G4/38 ,  H01L21/20

    CPC分类号： H01G4/28 ,  H01G4/385 ,  Y10T29/435

    摘要： An apparatus and process for making a capacitor comprising a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.

    摘要翻译： 一种用于制造电容器的装置和方法，包括被选择用于形成电容器电介质的间隔材料覆盖的第一电容器板元件。 第一电容器板元件和间隔材料被第二电容器元件封装。 拉伸第二电容器板元件以减小其外径。 多个电容器元件插入第二电容器板连接器内。 第二电容器板连接器被拉伸以减小金属管的外径，并且用于将多个第二电容器板元件与第二电容器板连接器电互连以形成第二电容器板。 第一电容器元件的多重性与第一电容器板连接器互连以形成第一电容器板。 间隔材料被电介质材料代替以形成电容器。

    Optical device and method of making
    37.
    发明申请
    Optical device and method of making 审中-公开
    光学装置及制作方法

    公开(公告)号：US20120064655A1

    公开(公告)日：2012-03-15

    申请号：US13134091

    申请日：2011-05-27

    申请人： Nathaniel R. Quick ,  Aravinda Kar

    发明人： Nathaniel R. Quick ,  Aravinda Kar

    IPC分类号： H01L21/02 ,  H01L35/34

    CPC分类号： H01L21/268 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/58 ,  G01K11/125 ,  H01L21/02678

    摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

    摘要翻译： 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

    Solid state energy conversion device
    38.
    发明申请
    Solid state energy conversion device 失效

    公开(公告)号：US20110275174A1

    公开(公告)日：2011-11-10

    申请号：US13135742

    申请日：2011-07-14

    申请人： Nathaniel R. Quick ,  Aravinda Kar

    发明人： Nathaniel R. Quick ,  Aravinda Kar

    IPC分类号： H01L33/34

    CPC分类号： H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

    摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

    Apparatus and method for increasing thermal conductivity of a substrate
    40.
    发明申请
    Apparatus and method for increasing thermal conductivity of a substrate 审中-公开
    用于增加基底的导热性的装置和方法

    公开(公告)号：US20110031504A1

    公开(公告)日：2011-02-10

    申请号：US12924965

    申请日：2010-10-08

    申请人： Nathaniel R. Quick ,  Aravinda Kar

    发明人： Nathaniel R. Quick ,  Aravinda Kar

    IPC分类号： H01L29/24

    CPC分类号： H01L21/268 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02612 ,  H01L21/02675 ,  H01L21/02689 ,  H01L21/0405 ,  H01L21/0445 ,  H01L23/3738 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An apparatus and method is disclosed for increasing the thermal conductivity in a substrate of a non-wide bandgap material comprising the steps of directing a thermal energy beam onto the substrate in the presence of a first doping gas for converting a region of the substrate into a wide bandgap material to enhance the thermal conductivity of the substrate for cooling the non-wide bandgap material. In one example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material. In another example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material having basal planes disposed to extend generally outwardly relative to an external surface of the substrate to enhance the cooling of the substrate.

    摘要翻译： 公开了用于增加非宽带隙材料的衬底中的导热性的装置和方法，包括以下步骤：在第一掺杂气体存在下将热能束引导到衬底上，以将衬底的区域转换成 宽带隙材料，以增强用于冷却非宽带隙材料的衬底的导热性。 在一个实例中，本发明被并入形成在宽带隙材料内的富碳层中。 在另一个实例中，本发明被并入形成在宽带隙材料内的富碳层中，其具有设置成相对于衬底的外表面大致向外延伸的基面，以增强衬底的冷却。