公开(公告)号：US09064798B2

公开(公告)日：2015-06-23

申请号：US13134091

申请日：2011-05-27

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC分类号： H01L21/268 ,  H01L21/02 ,  G01J5/08 ,  G01J5/58 ,  G01K11/12

CPC分类号： H01L21/268 ,  G01J5/08 ,  G01J5/0809 ,  G01J5/58 ,  G01K11/125 ,  H01L21/02678

摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

摘要翻译： 公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。 通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。 热能束限定光学装置的光学和物理性质。 光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性 可选电极 本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

公开(公告)号：US08114693B1

公开(公告)日：2012-02-14

申请号：US12284115

申请日：2008-09-18

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L21/428

CPC分类号： H01L33/005 ,  H01L21/8213 ,  H01L21/8252 ,  H01L31/0312 ,  H01L31/03125 ,  H01L33/343

摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

摘要翻译： 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

公开(公告)号：US20110272710A1

公开(公告)日：2011-11-10

申请号：US13135736

申请日：2011-07-14

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L31/028 ,  H01L31/18 ,  H01L31/0304

CPC分类号： H01L21/0455 ,  H01L31/03125 ,  H01L31/072 ,  H01L33/305 ,  H01L33/325 ,  Y02E10/50

摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.

摘要翻译： 公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。 固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。 在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。 第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。 在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。 在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

公开(公告)号：US20110056542A1

公开(公告)日：2011-03-10

申请号：US12592695

申请日：2009-12-01

申请人： Nathaniel R. Quick ,  Aravinda Kar

发明人： Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： H01L31/102 ,  F24J2/04 ,  H01L31/18

CPC分类号： H01L31/1876 ,  F24S10/755 ,  F24S50/40 ,  H01L21/4846 ,  H01L21/67115 ,  H01L31/02325 ,  H01L31/03042 ,  H01L31/03125 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/0547 ,  H01L31/068 ,  H01L31/0693 ,  H01L31/112 ,  H01L31/1812 ,  H01L31/184 ,  H02S40/44 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/60 ,  Y02P70/521

摘要： A solid-state energy conversion device and method of making is disclosed wherein the solid-state energy conversion device is formed through the conversion of an insulating material. In one embodiment, the solid-state energy conversion device operates as a photovoltaic device to provide an output of electrical energy upon an input of electromagnetic radiation. In another embodiment, the solid-state energy conversion device operates as a light emitting device to provide an output of electromagnetic radiation upon an input of electrical energy. In one example, the photovoltaic device is combined with a solar liquid heater for heating a liquid. In another example, the photovoltaic device is combined with a solar liquid heater for treating water.

摘要翻译： 公开了一种固态能量转换装置及其制造方法，其中通过绝缘材料的转换形成固体能量转换装置。 在一个实施例中，固态能量转换装置用作光电装置，以在电磁辐射的输入上提供电能的输出。 在另一个实施例中，固态能量转换装置用作发光装置，以在电能输入上提供电磁辐射的输出。 在一个示例中，光伏器件与用于加热液体的太阳能液体加热器组合。 在另一个实例中，光伏器件与用于处理水的太阳能液体加热器组合。

公开(公告)号：US20100025694A1

公开(公告)日：2010-02-04

申请号：US12587399

申请日：2009-10-06

申请人： Nathaniel R. Quick

发明人： Nathaniel R. Quick

IPC分类号： H01L29/12 ,  H01L21/263

CPC分类号： H01L21/02381 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02667 ,  H01L21/02689

摘要： A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap material. An improved component such as wide bandgap semiconductor device may be formed within the wide bandgap material through a further conversion process.

摘要翻译： 公开了一种在非宽带隙材料中形成宽带隙材料层的方法。 该方法包括提供非宽带隙材料的衬底并将非宽带隙材料的层转换成宽带隙材料的层。 可以通过进一步的转换过程在宽带隙材料内形成诸如宽带隙半导体器件的改进的部件。

公开(公告)号：US07268063B1

公开(公告)日：2007-09-11

申请号：US11141913

申请日：2005-06-01

申请人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

发明人： Nathaniel R. Quick ,  Aravinda Kar ,  Islam A. Salama

IPC分类号： H01L21/20

CPC分类号： H01L21/02376 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02636

摘要： A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

摘要翻译： 公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。 用第一激光束烧蚀衬底以在其中形成空隙。 第一导电元件用第二激光束形成在衬底的空隙中。 在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。 第二导电元件用第四激光束形成在第一半导体材料上。 该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

公开(公告)号：US06939748B1

公开(公告)日：2005-09-06

申请号：US10684930

申请日：2003-10-13

申请人： Nathaniel R. Quick

发明人： Nathaniel R. Quick

IPC分类号： H01L21/04 ,  H01L21/268 ,  H01L21/335

CPC分类号： B82Y10/00 ,  H01L21/0445 ,  H01L21/268 ,  Y10S435/931 ,  Y10S435/965

摘要： A method is disclosed for making a nano-size semiconductor component within a wide-bandgap semiconductor substrate. A first thermal energy beam is directed onto a first portion of the wide-bandgap semiconductor substrate to change the structure of the wide-bandgap semiconductor substrate into a first element of the semiconductor component. A second thermal energy beam is directed onto a second portion of the wide-bandgap semiconductor substrate adjacent to the first portion to form a second element of the semiconductor component.

摘要翻译： 公开了一种在宽带隙半导体衬底内制造纳米尺寸半导体部件的方法。 第一热能束被引导到宽带隙半导体衬底的第一部分上，以将宽带隙半导体衬底的结构改变为半导体部件的第一元件。 第二热能束被引导到与第一部分相邻的宽带隙半导体衬底的第二部分上以形成半导体部件的第二元件。

公开(公告)号：US06437967B1

公开(公告)日：2002-08-20

申请号：US09834055

申请日：2001-04-12

申请人： Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

发明人： Nathaniel R. Quick ,  Clinton V. Kopp ,  Michael Liberman ,  Alexander Sobolevsky ,  Michael C. Murray

IPC分类号： H01G4228

CPC分类号： H01G4/28 ,  H01G4/385 ,  Y10T29/435

摘要： An apparatus and process for making a capacitor comprising a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.

摘要翻译： 一种用于制造电容器的装置和方法，包括被选择用于形成电容器电介质的间隔材料覆盖的第一电容器板元件。 第一电容器板元件和间隔材料被第二电容器元件封装。 拉伸第二电容器板元件以减小其外径。 多个电容器元件插入第二电容器板连接器内。 第二电容器板连接器被拉伸以减小金属管的外径，并且用于将多个第二电容器板元件与第二电容器板连接器电连接以形成第二电容器板。 第一电容器元件的多重性与第一电容器板连接器互连以形成第一电容器板。 间隔材料被电介质材料代替以形成电容器。

公开(公告)号：US5793042A

公开(公告)日：1998-08-11

申请号：US721747

申请日：1996-09-30

申请人： Nathaniel R. Quick

发明人： Nathaniel R. Quick

IPC分类号： G01J3/453 ,  G01J1/06

CPC分类号： G01J3/453

摘要： A preferred embedment of the system and a method are provided utilizing Fourier Transform Infrared Spectrophotometer (FITR) for examination and analysis of materials on a real-time basis in a chamber at elevated temperatures with corrosive-erosive gaseous environments that cause accelerated material deterioration. The apparatus is capable on a real-time basis of examining and analyzing a wide variety of materials subjected to accelerated deterioration events missed by prior art systems and methods. Empirical data of accelerated corrosion-erosion events are also acquired and stored for subsequent computer analysis of recorded absorbed and reflected vibrational frequencies detected. The system utilizes preselected adjustable grazing angles of an incident beam of the infrared beam impinging upon a material sample during the observation and analysis processes to enhance the data to be collected. The system provides feed back laser signals for alignment adjustment for the selectable grazing angles.

摘要翻译： 利用傅里叶变换红外分光光度计（FITR）提供系统和方法的优选嵌入，用于在高温下在室中实时检测和分析材料，其中腐蚀性侵蚀性气体环境导致加速的材料变质。 该装置能够实时地检查和分析由现有技术系统和方法错过的加速劣化事件的各种材料。 加速腐蚀侵蚀事件的经验数据也被获取并储存，用于后续计算机分析所记录的吸收和反射的振动频率。 该系统利用在观察和分析过程中撞击材料样品的红外光束的入射光束的预选的可调掠角，以增强要采集的数据。 该系统提供反馈激光信号用于可选择的放牧角度的对准调整。

公开(公告)号：US20170131556A1

公开(公告)日：2017-05-11

申请号：US14938194

申请日：2015-11-11

申请人： Islam A. Salama ,  Nathaniel R. Quick ,  Aravinda Kar

发明人： Islam A. Salama ,  Nathaniel R. Quick ,  Aravinda Kar

IPC分类号： G02B27/09 ,  H01S3/223 ,  G02B27/42 ,  H01S3/00

摘要： A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.