Fluid-filled bushing
    31.
    发明授权
    Fluid-filled bushing 失效
    流体填充衬套

    公开(公告)号:US4705263A

    公开(公告)日:1987-11-10

    申请号:US850329

    申请日:1986-04-11

    摘要: A fluid-filled bushing comprises at least two sleeves disposed in concentric relation to each other, a resilient member interposed between the two sleeves and having a substantially annular recess defined in an outer circumferential surface thereof, a partition disposed in the annular recess and having holes defined therein and defining first and second substantially annular fluid chambers in the annular recess which selectively communicate with each other through the holes of the partition, a fluid filled in each of the first and second fluid chambers, and a valve for variably restricting the flow of the fluid between the first and second fluid chambers.

    摘要翻译: 流体填充衬套包括至少两个彼此同心地设置的套筒,插入在两个套管之间的弹性构件,并且具有限定在其外圆周表面中的基本上环形的凹部,设置在环形凹部中的隔板, 并且限定在所述环形凹槽中的第一和第二基本上环形的流体室,所述第一和第二基本上环形的流体腔室通过隔板的孔彼此选择性地连通,填充在第一和第二流体室的每一个中的流体以及用于可变地限制 第一和第二流体室之间的流体。

    Method for producing cycloolefins
    32.
    发明授权
    Method for producing cycloolefins 失效
    环烯烃的制备方法

    公开(公告)号:US4575572A

    公开(公告)日:1986-03-11

    申请号:US753861

    申请日:1985-07-11

    摘要: A method for producing cycloolefins useful as an intermediate material for lysine, caprolactam, adipic acid, medicines, agricultural chemicals, dyes and the like, which comprises partial hydrogenation of aromatic hydrocarbons with hydrogen gas in the presence of a catalyst composed of barium sulfate which is a carrier as well as ruthenium and at least one metal selected from the group consisting of iron, cobalt, silver and copper supported on said barium sulfate, and water.

    摘要翻译: 一种制备用作赖氨酸,己内酰胺,己二酸,药物,农药,染料等的中间体的环烯烃的方法,其包括在由硫酸钡组成的催化剂存在下用氢气部分氢化芳烃 载体以及钌和至少一种选自负载在所述硫酸钡上的铁,钴,银和铜组成的组中的金属和水。

    PLANT CULTIVATION SYSTEM AND A METHOD FOR PLANT CULTIVATION
    38.
    发明申请
    PLANT CULTIVATION SYSTEM AND A METHOD FOR PLANT CULTIVATION 审中-公开
    植物培养系统和植物培养方法

    公开(公告)号:US20160205880A1

    公开(公告)日:2016-07-21

    申请号:US14913125

    申请日:2014-08-11

    IPC分类号: A01G31/00 A01G1/00 A01G25/02

    摘要: [Problems] Prior art technology has a problem in that when a plant is cultivated for a long period of time on a polyvinyl alcohol (PVA) film having its lower surface positioned in contact with a nutrient fluid, plant roots that have formed penetrate through the film.[Means to solve the problems] A plant cultivation system wherein the PVA film has an equilibrium degree of swelling in the range of from 125 to 250% as measured in water at 30° C. and has a loss tangent (tan δ) in the range of from 0.005 to 0.2 as measured in an equilibrium swollen state in water at 30° C., and a method for cultivating a plant by using this plant cultivation system.[Industrial applicability] Plant cultivation can be performed for a long period of time while avoiding infection by bacteria and the like causative of plant diseases. Therefore, the present invention is useful in, e.g., agriculture and the manufacture of pharmaceuticals.

    摘要翻译: 现有技术存在的问题在于,当将植物长时间培养在其下表面与营养液接触的聚乙烯醇(PVA)膜上时,已经形成的植物根部穿过 电影。 [解决问题的方法]一种植物栽培系统,其中在30℃下在水中测量的PVA膜具有在125至250%范围内的平衡膨胀度,并且在其中具有损耗角正切(tanδ) 在30℃的水中以平衡溶胀状态测定的0.005〜0.2的范围,以及使用该植物培养体系培养植物的方法。 [工业实用性]植物栽培可以长时间进行,同时避免细菌感染等引起植物病害的发生。 因此,本发明在例如农业和药物的制造中是有用的。

    Semiconductor storage apparatus, and method and system for boosting word lines
    39.
    发明授权
    Semiconductor storage apparatus, and method and system for boosting word lines 有权
    半导体存储装置以及用于增强字线的方法和系统

    公开(公告)号:US08503247B2

    公开(公告)日:2013-08-06

    申请号:US12826054

    申请日:2010-06-29

    申请人: Hiroshi Yoshioka

    发明人: Hiroshi Yoshioka

    IPC分类号: G11C11/34

    CPC分类号: G11C8/08

    摘要: A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.

    摘要翻译: 半导体存储装置包括:字线耦合到单元晶体管; 第一电容器,其具有耦合到所述字线的第一端; 耦合到所述第一电容器的第二端的升压驱动器; 配置为产生第一电压和第二电压之间的给定电压降的电压降电路; 以及升压驱动电路,被配置为将第二端的电压从第二电压升高到第一电压。