公开(公告)号：US08089096B2

公开(公告)日：2012-01-03

申请号：US11470316

申请日：2006-09-06

Applicant: Hidetoshi Ishida ,  Masayuki Kuroda ,  Tetsuzo Ueda

Inventor： Hidetoshi Ishida ,  Masayuki Kuroda ,  Tetsuzo Ueda

IPC: H01L29/778 ,  H01L29/04

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 μm or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm−2 or more.

Abstract translation: 常关型场效应晶体管包括：第一半导体层，其由具有6mm对称性的第一六边形晶体制成并且具有包括第一六边形晶体的C轴的主表面; 第二半导体层，其形成在所述第一半导体层的主表面上，并且由具有与所述第一六边形晶体的带隙不同的带隙的6mm对称的第二六边形晶体制成; 以及形成在第二半导体层上的栅电极，源电极和漏电极。 这里，第一氮化物半导体层的膜厚为1.5μm以下，第二半导体层以1×1013cm-2以上的剂量掺杂杂质。

公开(公告)号：US20100321363A1

公开(公告)日：2010-12-23

申请号：US12518005

申请日：2008-06-19

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

IPC: G09G3/28

CPC classification number: G09G3/294 ,  G09G3/2965

Abstract: A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device 10 has a semiconductor multilayer 13 formed on a substrate 11 and made of a nitride semiconductor or a silicon carbide semiconductor, a source electrode 16 and a drain electrode 17 formed and spaced apart from each other on the semiconductor multilayer 13, and a first gate electrode 18A and a second gate electrode 18B formed between the source electrode 16 and the drain electrode 17, successively from the source electrode 16 side.

Abstract translation: 等离子体显示面板驱动装置包括用于产生施加到等离子体显示面板的电极的驱动脉冲的电极驱动单元。 电极驱动单元具有多个开关。 多个开关中的至少一个是包括双栅极半导体器件的开关器件。 双栅极半导体器件10具有形成在基板11上并由氮化物半导体或碳化硅半导体形成的半导体层叠体13，在半导体层叠体13上形成并隔开的源电极16和漏电极17 以及从源极电极16侧依次形成在源极电极16和漏极电极17之间的第一栅极电极18A和第二栅极电极18B。

公开(公告)号：US20100097105A1

公开(公告)日：2010-04-22

申请号：US12445390

申请日：2007-11-20

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Hiroaki Ueno ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC: H03B1/00 ,  H01L29/20 ,  H01L29/24 ,  H01L29/772 ,  H03K17/56

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/739 ,  H01L29/8124

Abstract: A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.

Abstract translation: 半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。 在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

公开(公告)号：US07595680B2

公开(公告)日：2009-09-29

申请号：US12020163

申请日：2008-01-25

Applicant: Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

Inventor： Tatsuo Morita ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Yasuhiro Uemoto ,  Manabu Inoue

IPC: H03K17/687

CPC classification number: H03K17/687 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/7787 ,  H03K17/302 ,  H03K17/567 ,  H03K17/6877 ,  H03K17/74 ,  H03K17/78 ,  H03K17/795 ,  H03K2217/0036

Abstract: A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode.

Abstract translation: 双向开关包括具有第一欧姆电极，第二欧姆电极和栅电极的场效应晶体管，以及通过向栅电极施加偏压来控制导通状态和截止状态的控制电路。 当第二欧姆电极的电位高于第一欧姆电极的电位时，控制电路施加来自第一欧姆电极的偏置电压作为参考，并且当第二欧姆电极的电位为电位时施加来自第二欧姆电极的偏置电压作为参考 的第二电极的电位低于第一欧姆电极的电位。

公开(公告)号：US06933542B2

公开(公告)日：2005-08-23

申请号：US10768040

申请日：2004-02-02

Applicant: Hidetoshi Ishida ,  Tsuyoshi Tanaka

Inventor： Hidetoshi Ishida ,  Tsuyoshi Tanaka

IPC: H01L21/335 ,  H01L27/06 ,  H01L29/778 ,  H01L31/109 ,  H01L29/739

CPC classification number: H01L29/66462 ,  H01L27/0605 ,  H01L29/7783

Abstract: A channel layer made of undoped InGaAs, a carrier supply layer made of n-type AlGaAs, a Schottky layer made of disordered InGaP without a natural superlattice structure, and a cap layer made of GaAs are successively stacked on a compound semiconductor substrate. A gate electrode is formed on a part of the Schottky layer exposed at the opening of the cap layer. Source and dram electrodes are formed on the cap layer. The thickness of the Schottky layer is set at about 8 nm or less. As a result, the reverse breakdown voltage of the gate electrode becomes larger than that in the case of a Schottky layer made of AlGaAs.

Abstract translation: 由n型AlGaAs构成的载流子供给层，由天然超晶格结构的无序InGaP构成的肖特基以及由GaAs构成的盖层构成的沟道层依次层叠在化合物半导体基板上。 栅极电极形成在暴露在盖层开口处的肖特基层的一部分上。 源极和引脚电极形成在盖层上。 肖特基层的厚度设定为约8nm以下。 结果，栅电极的反向击穿电压变得大于由AlGaAs制成的肖特基层的情况。

公开(公告)号：US06365513B1

公开(公告)日：2002-04-02

申请号：US09162232

申请日：1998-09-29

Applicant: Hidetoshi Furukawa ,  Atsushi Noma ,  Tsuyoshi Tanaka ,  Hidetoshi Ishida ,  Daisuke Ueda

Inventor： Hidetoshi Furukawa ,  Atsushi Noma ,  Tsuyoshi Tanaka ,  Hidetoshi Ishida ,  Daisuke Ueda

IPC: H01L2166

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.

Abstract translation: 在衬底中形成具有底部的通孔，然后在通孔的至少一个侧壁上形成导体层。 此后，通过去除衬底的与形成通孔的衬底的另一部分相对的部分使得导体层暴露而使衬底变薄。

公开(公告)号：US06345916B1

公开(公告)日：2002-02-12

申请号：US09447576

申请日：1999-11-23

Applicant: Dai Yui ,  Kei Sunaga ,  Teruo Ikechi ,  Hidetoshi Ishida ,  Manabu Shiozaki ,  Takashi Sasaki ,  Kohei Kobayashi

Inventor： Dai Yui ,  Kei Sunaga ,  Teruo Ikechi ,  Hidetoshi Ishida ,  Manabu Shiozaki ,  Takashi Sasaki ,  Kohei Kobayashi

IPC: G02B636

CPC classification number: G02B6/3652 ,  G02B6/3636 ,  G02B6/3668 ,  G02B6/368 ,  G02B6/3696 ,  G02B6/3833 ,  G02B6/3839 ,  G02B6/3861

Abstract: The present invention provides a fiber optic connector comprising a fiber pressing member and a substrate having a part A with multiple fiber arranging grooves in which bare portion of optical fibers are fixed, and a part B in which coated portion of optical fibers are fixed, and its manufacturing method. The connector enables to prevent an increase in transmission loss or breakage of the optical fibers by reducing the localized stress on the fibers from the rear end of the fiber pressing member and the rear end edge of the fiber arranging grooves.

Abstract translation: 本发明提供一种光纤连接器，其包括：纤维按压部件和具有多个纤维配置槽的部分A的基板，其中光纤的裸露部分固定在其中;以及部分B，光纤的被涂部分固定在其中;以及 其制造方法。 连接器能够通过减少纤维从纤维按压部件的后端和纤维排列槽的后端边缘的纤维的局部应力来防止光纤的传输损耗的增加或断裂。

公开(公告)号：US5416868A

公开(公告)日：1995-05-16

申请号：US161345

申请日：1993-12-06

Applicant: Toshiaki Kakii ,  Makoto Honjo ,  Hidetoshi Ishida ,  Hiroshi Katsura ,  Toru Yamanishi ,  Kazumichi Miyabe ,  Tadashi Haibara ,  Michito Matsumoto

Inventor： Toshiaki Kakii ,  Makoto Honjo ,  Hidetoshi Ishida ,  Hiroshi Katsura ,  Toru Yamanishi ,  Kazumichi Miyabe ,  Tadashi Haibara ,  Michito Matsumoto

IPC: G02B6/38 ,  G02B6/40 ,  G02B6/36

CPC classification number: G02B6/3865 ,  G02B6/3839 ,  G02B6/3873

Abstract: An optical connector for connecting optical fibers, comprises: a guide-groove substrate having grooves for positioning optical fibers and guide pins; an upper plate having groove portions each for covering the guide pins positioned in the guide grooves of the guide-groove substrate; elastic guide-pin pressing members each provided in the groove portions of the upper plate above portions where the guide pin grooves are in contact with the guide pins. In such a arrangement, it is preferable to forman oxide film on said V-grooves of the guide-groove substrate at least in the vicinity of contact points between the guide pins and the V-grooves. The optical connector further includes a resin molding portion for surrounding the substrate and the upper plate, the resin molding portion including a pair of opposite opened portions at top and bottom surfaces thereof.

Abstract translation: 一种用于连接光纤的光连接器，包括：具有用于定位光纤和引导销的槽的导槽基板; 上板，其具有各自用于覆盖位于导向槽基板的引导槽中的引导销的槽部; 弹性导向销按压部件分别设置在所述上​​板的所述槽部中，所述槽部在所述导销槽与所述引导销接触的部分之上。 在这种布置中，优选至少在引导销和V形槽之间的接触点附近，在导向槽基板的所述V形槽上形成氧化膜。 光连接器还包括用于围绕基板和上板的树脂模制部分，树脂模塑部分在其顶表面和底表面上包括一对相对的开口部分。

公开(公告)号：US4983012A

公开(公告)日：1991-01-08

申请号：US512415

申请日：1990-04-23

Applicant: Kazuhito Saito ,  Toshiaki Kakii ,  Hidetoshi Ishida ,  Shuzo Suzuki

Inventor： Kazuhito Saito ,  Toshiaki Kakii ,  Hidetoshi Ishida ,  Shuzo Suzuki

IPC: G02B6/38

CPC classification number: G02B6/3839 ,  G02B6/3885 ,  G02B6/389 ,  G02B6/3858 ,  G02B6/3873

Abstract: An optical connector comprises an optical fiber guide member consisting of a grooved substrate and a cover plate, the substrate having optical fiber guide grooves and guide pin grooves cut into its top surface, and the cover plate being joined to the substrate to cover the optical fiber guide grooves but to leave at least part of the guide pin grooves exposed; a pressing member which is movable in the vertical direction of the guide pin grooves and is provided above the guide pin grooves to elastically press guide pins which are positioned on the guide pin grooves downward; and coupling clips enhancing the force of elastic pressure being exerted on the guide pins so as to secure the joining of optical fibers.

公开(公告)号：US09116307B2

公开(公告)日：2015-08-25

申请号：US13824164

申请日：2011-10-03

Applicant: Hiroyoshi Maesoba ,  Tetsuji Tanaka ,  Hidetoshi Ishida

Inventor： Hiroyoshi Maesoba ,  Tetsuji Tanaka ,  Hidetoshi Ishida

IPC: G02B6/38

CPC classification number: G02B6/38 ,  G02B6/3869 ,  G02B6/387 ,  G02B6/3877 ,  G02B6/3878

Abstract: A sleeve for an optical connector into which a ferrule arranged to hold an optical fiber is to be inserted, and by which an optical connector in which the sleeve is to be housed can be reduced in size in a direction that the optical connector is fitted into a counterpart optical connector. A sleeve for an optical connector includes a portion having a tube shape, into which a ferrule is to be inserted, and a hook portion at one end of the sleeve, the hook portion protruding in a diameter direction of the tube-shaped portion.

Abstract translation: 用于插入光纤连接器的用于保持光纤的套圈的光学连接器的套筒，并且通过该套筒可以将光学连接器装入的方向减小其中容纳套筒的光学连接器的尺寸 对应的光连接器。 用于光连接器的套筒包括一个具有套管形状的管状部分，套筒一端的钩部分，钩形部分沿着管状部分的直径方向突出。