公开(公告)号：US07384828B2

公开(公告)日：2008-06-10

申请号：US10835072

申请日：2004-04-30

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

IPC分类号： H01L21/84

CPC分类号： H01L29/78636 ,  C23C16/0272 ,  C23C16/24 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/3221 ,  H01L29/66757 ,  H01L29/78621

摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.

摘要翻译： 通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。 通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜， 高浓度的稀有气体元素或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3 3，并含有浓度为1×10 15 / cm 3至1×10 17 / cm 3以上的氟 >。

公开(公告)号：US07306982B2

公开(公告)日：2007-12-11

申请号：US10940821

申请日：2004-09-15

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.

摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

公开(公告)号：US20070218604A1

公开(公告)日：2007-09-20

申请号：US11754484

申请日：2007-05-29

申请人： Hideto Ohnuma ,  Ichiro Uehara

发明人： Hideto Ohnuma ,  Ichiro Uehara

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

摘要： Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

摘要翻译： 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US07183614B2

公开(公告)日：2007-02-27

申请号：US11137513

申请日：2005-05-26

申请人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

发明人： Hongyong Zhang ,  Yasuhiko Takemura ,  Toshimitsu Konuma ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

摘要翻译： 提供了一种方法，通过该方法可以容易地形成轻掺杂漏极（LDD）区域，并且在具有覆盖有氧化物覆盖层的栅电极的薄膜晶体管中的源/漏区域中以良好的产率形成。 通过以栅极电极作为掩模，以自对准的方式将杂质引入岛状硅膜中形成轻掺杂漏极（LDD）区域。 首先，通过使用旋转 - 倾斜离子注入在岛状硅膜中形成低浓度杂质区，以相对于衬底从倾斜方向进行离子掺杂。 此时也在栅电极下方形成低浓度杂质区。 之后，将高浓度的杂质通常引入衬底，从而形成高浓度杂质区域。 在上述过程中，低浓度杂质区域保留在栅电极下方并构成轻掺杂漏区。

公开(公告)号：US20070037069A1

公开(公告)日：2007-02-15

申请号：US11462824

申请日：2006-08-07

申请人： Hideto Ohnuma

发明人： Hideto Ohnuma

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： H01L27/1288 ,  G03F1/28 ,  G03F1/32 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  Y10T428/24802

摘要： An exposure mask provided with a semi-transparent film, capable of forming a resist in which a convex portion is not formed in an end portion and the end portion has gentle shape. In an exposure mask having a first region and a second region having different phase and transmittance with respect to exposure light, the phase difference Δθ with respect to exposure light which transmits though the first region and the second region and the transmittance n of the second region with respect to exposure light are defined so as to satisfy following formula 1. Δθ≦arccos (−√n/2)  [Formula 1]Accordingly, a resist having regions with different thicknesses and having gentle shape in an edge can be formed. By performing a process such as etching with this resist, regions having different thicknesses can be formed in a self-aligned manner.

摘要翻译： 一种具有半透明膜的曝光掩模，能够形成在端部不形成凸部并且端部具有平缓形状的抗蚀剂。 在具有相对于曝光光具有不同相位和透射率的第一区域和第二区域的曝光掩模中，相对于通过第一区域和第二区域透射的曝光光的相位差Deltatheta和第二区域的透射率n 定义为曝光光以满足下面的公式1. <？in-line-formula description =“In-line Formulas”end =“lead”？> Deltatheta <= arccos（-√n/ 2）[式 1] <？in-line-formula description =“In-line Formulas”end =“tail”？>因此，可以形成具有不同厚度且具有边缘温和形状的区域的抗蚀剂。 通过利用该抗蚀剂进行蚀刻等处理，能够以自对准的方式形成具有不同厚度的区域。

公开(公告)号：US20070032049A1

公开(公告)日：2007-02-08

申请号：US11580938

申请日：2006-10-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

IPC分类号： H01L21/20

CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

公开(公告)号：US20060275710A1

公开(公告)日：2006-12-07

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： G03F7/26

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

公开(公告)号：US07115453B2

公开(公告)日：2006-10-03

申请号：US10056055

申请日：2002-01-28

申请人： Osamu Nakamura ,  Masayuki Kajiwara ,  Shunpei Yamazaki ,  Hideto Ohnuma

发明人： Osamu Nakamura ,  Masayuki Kajiwara ,  Shunpei Yamazaki ,  Hideto Ohnuma

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/78675 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/32 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78663

摘要： Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catalytic element used to crystallize a semiconductor film having an amorphous structure, gettering is completed by forming a region or a semiconductor film, to which a rare gas element is added, and by having the catalytic element move to the formed region or semiconductor film.

公开(公告)号：US07098084B2

公开(公告)日：2006-08-29

申请号：US09800627

申请日：2001-03-07

申请人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

发明人： Koichiro Tanaka ,  Hideto Ohnuma ,  Chiho Kokubo

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  G02F1/13454 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  Y10S438/907

摘要： In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

公开(公告)号：US07091110B2

公开(公告)日：2006-08-15

申请号：US10458622

申请日：2003-06-11

申请人： Hideto Ohnuma

发明人： Hideto Ohnuma

IPC分类号： H01L21/322

CPC分类号： H01L29/4908 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A technique, where a semiconductor film having a crystal structure is obtained using a metal element that helps crystallization of the semiconductor film, then that metal element remained in the film is effectively removed, as a result variation among elements is reduced, is provided. In a process for forming a gettering site, a semiconductor film containing a rare-gas element is formed, then an anti-diffusion film for preventing diffusion of the rare-gas element is formed, thereby the metal element in another semiconductor film is effectively removed, particularly in a gettering that is a heating treatment at a high temperature of 600° C. or more.

摘要翻译： 使用有助于半导体膜结晶的金属元素获得具有晶体结构的半导体膜的技术，因此有效地去除了残留在膜中的金属元素，结果，元件之间的变化被降低。 在形成吸气部位的方法中，形成含有稀有气体元素的半导体膜，形成防止稀土元素扩散的防扩散膜，有效地除去另一半导体膜中的金属元素 特别是在600℃以上的高温下的加热处理的吸气。