公开(公告)号：US08324032B2

公开(公告)日：2012-12-04

申请号：US13152492

申请日：2011-06-03

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing, the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过对光栅掩模或掩模版形成栅极电极的光刻工艺，建立了具有降低光的强度并由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造结构晶体管。

公开(公告)号：US20070218604A1

公开(公告)日：2007-09-20

申请号：US11754484

申请日：2007-05-29

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US20060014335A1

公开(公告)日：2006-01-19

申请号：US11224047

申请日：2005-09-13

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

公开(公告)号：US07955912B2

公开(公告)日：2011-06-07

申请号：US12823175

申请日：2010-06-25

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US20080119024A1

公开(公告)日：2008-05-22

申请号：US11969247

申请日：2008-01-04

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/04

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US20100261320A1

公开(公告)日：2010-10-14

申请号：US12823175

申请日：2010-06-25

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/336

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US07745271B2

公开(公告)日：2010-06-29

申请号：US11969247

申请日：2008-01-04

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US07316946B2

公开(公告)日：2008-01-08

申请号：US11754484

申请日：2007-05-29

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US07223643B2

公开(公告)日：2007-05-29

申请号：US09925512

申请日：2001-08-10

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

Abstract translation: 通常以半导体器件中的LDD结构和GOLD结构的形式，以栅电极作为掩模进行自对准，但是栅电极具有两层结构的情况很多，成膜工艺和蚀刻工艺变得复杂。 此外，为了仅通过诸如干蚀刻的工艺来形成LDD结构和GOLD结构，晶体管结构都具有相同的结构，并且难以分别形成用于不同电路的LDD结构，GOLD结构和单个漏极结构 。 通过应用用于形成栅电极的光刻工艺来形成光掩模或掩模版，其中具有降低光强度并且由衍射光栅图案或半透明膜构成的功能的补充图案，GOLD结构，LDD结构和单漏极结构 通过干蚀刻和离子注入工艺步骤可以容易地为不同的电路制造晶体管。

公开(公告)号：US07169656B2

公开(公告)日：2007-01-30

申请号：US11224047

申请日：2005-09-13

Applicant: Hideto Ohnuma ,  Ichiro Uehara

Inventor： Hideto Ohnuma ,  Ichiro Uehara

IPC: H01L21/84

CPC classification number: H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

Abstract: Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.