Abstract:
Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
Abstract:
A display panel includes pixels connected to each of gate lines and data lines. Each of the pixels includes a first transistor connected between a corresponding data line among the data lines and a first node and configured to deliver a data signal of the corresponding data line to the first node in response to an input signal received through a corresponding gate line among the gate lines, a reflective element circuit connected to the first node, and configured to implement the reflective mode in response to a signal of the first node when a first mode selection signal indicates a reflective mode, an emissive element circuit connected to a second node, and configured to implement the emissive mode in response to the signal of the first node when the mode selection mode indicates an emissive mode.
Abstract:
Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
Abstract:
A dual-mode display including a substrate and a multiple sub-pixels on the substrate, in which each sub-pixel includes, a color selection reflector, and an optical shutter disposed on the color selection reflector, and an emissive devised disposed on the shutter, wherein the emissive device includes a cathode and an anode, and the cathode and the anode include a carbon-based material including graphene sheets, graphene flakes, and graphene platelets, and a binary or ternary transparent conductive oxide including indium oxide, tin oxide, and zinc oxide.
Abstract:
A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode.
Abstract:
A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.
Abstract:
Provided are a dual-mode display device and a method of manufacturing the same. The device includes a lower substrate, an upper substrate facing the lower substrate, a thin-film transistor portion between the upper substrate and the lower substrate, a first anode on one side of the thin-film transistor portion, a first cathode between the first anode and the upper substrate, an organic light-emitting layer between the first cathode and the first anode, a second anode on the other side of the thin-film transistor portion, a second cathode between the second anode and the upper substrate, or the second anode and the lower substrate, and a optical switching layer between the second cathode and the second anode.
Abstract:
Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.
Abstract:
Provided is a hybrid light emitting device. The hybrid light emitting device may include the first light emitting part on the substrate, the capping layer, and the second light emitting part. The first light emitting part may emit light having a first wavelength, and the first light emitting part may include a first electrode, an organic emitting layer, and a second electrode sequentially disposed. A second light emitting part may generate light having a second wavelength. A capping layer may be disposed between the organic emitting layer and the second light emitting part. The capping layer may reflect light having the first wavelength and transmit light having the second wavelength.
Abstract:
Provided is a method of fabricating an organic scattering layer. The method may include providing a deposition apparatus with a reaction chamber and a source chamber, loading a substrate in the reaction chamber, supplying carrier gas into the source chamber that may be configured to supply an evaporated organic source material into the reaction chamber, a temperature of the carrier gas ranging from 25° C. to 50° C., and spraying the carrier gas and the evaporated organic source material into the reaction chamber through a showerhead to deposit an organic scattering layer on the substrate, the organic scattering layer including organic particles, which may be provided in a molecularized form of the evaporated organic source material, and thereby having an uneven surface.