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31.发明授权公开(公告)号：US08946661B2
公开(公告)日：2015-02-03
申请号：US13686633
申请日：2012-11-27
Applicant: ASML Netherlands B.V.
Inventor： Erik Roelof Loopstra , Gerardus Hubertus Petrus Maria Swinkels , Vadim Yevgenyevich Banine , Johannes Hubertus Josephina Moors
CPC classification number: H05G2/006 , G03F7/70033 , G03F7/70891 , G03F7/70916 , G21K1/06 , H05G2/003 , H05G2/005 , H05G2/008
Abstract: A radiation source is configured to produce extreme ultraviolet radiation. The radiation source includes a chamber in which, in use, a plasma is generated, and an evaporation surface configured to evaporate a material formed as a by-product from the plasma and that is emitted to the evaporation surface. A method for removing a by-product material in or from a plasma radiation source of a lithographic apparatus includes evaporating a material which, in use, is emitted to that surface from the plasma.
Abstract translation: 辐射源被配置为产生极紫外辐射。 辐射源包括在其中使用中产生等离子体的腔室，以及蒸发表面，该蒸发表面构造成蒸发由等离子体形成的副产物并被发射到蒸发表面的材料。 用于在平版印刷设备的等离子体辐射源中除去或来自等离子体辐射源的副产物材料的方法包括在等离子体中蒸发在使用中发射到该表面的材料。
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32.发明授权公开(公告)号：US11143975B2
公开(公告)日：2021-10-12
申请号：US16472712
申请日：2017-11-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Joost André Klugkist , Maxim Aleksandrovich Nasalevich , Roland Johannes Wilhelmus Stas , Sando Wricke
Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.
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公开(公告)号：US11048180B2
公开(公告)日：2021-06-29
申请号：US16571956
申请日：2019-09-16
Applicant: ASML Netherlands B.V.
Inventor： Andrey Nikipelov , Vadim Yevgenyevich Banine , Christian Gerardus Norbertus Hendricus Marie Cloin , Edwin Te Sligte , Marcus Adrianus Van De Kerkhof , Ferdinandus Martinus Jozef Henricus Van De Wetering
IPC: G03F7/20
Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.
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公开(公告)号：US10976196B2
公开(公告)日：2021-04-13
申请号：US16488259
申请日：2018-02-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Joost André Klugkist , Vadim Yevgenyevich Banine , Johan Franciscus Maria Beckers , Madhusudhanan Jambunathan , Maxim Aleksandrovich Nasalevich , Andrey Nikipelov , Roland Johannes Wilhelmus Stas , David Ferdinand Vles , Wilhelmus Jacobus Johannes Welters , Sandro Wricke
Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.
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公开(公告)号：US10884339B2
公开(公告)日：2021-01-05
申请号：US16435630
申请日：2019-06-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Wouter Joep Engelen , Otger Jan Luiten , Andrey Alexandrovich Nikipelov , Vadim Yevgenyevich Banine , Pieter Willem Herman De Jager , Erik Roelof Loopstra
IPC: G03B27/42 , H01J31/48 , G03F7/20 , G01J1/04 , G02B1/06 , G02B5/20 , G21K1/10 , G02B26/02 , G01J1/26 , G01J1/42 , H01S3/09 , H05H7/04 , H01S3/00
Abstract: A method of patterning lithographic substrates, the method including using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
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Patent Agency Ranking
公开(公告)号：US10678140B2
公开(公告)日：2020-06-09
申请号：US15753811
申请日：2016-08-02
Applicant: ASML Netherlands B.V.
Inventor： Vadim Yevgenyevich Banine , Han-Kwang Nienhuys , Luigi Scaccabarozzi
Abstract: Disclosed is a suppression filter having a profile defining at least two reflective surface levels, each reflected surface level being separated by a separation distance. The separation distance is such that the reflective suppression filter is operable to substantially prevent specular reflection of radiation at a first wavelength and at a second wavelength incident on said reflective suppression filter. Also disclosed is a radiation collector, radiation source and lithographic apparatus comprising such a suppression filter, and to a method of determining a separation distance between at least two reflective surface levels of a suppression filter.
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公开(公告)号：US09986628B2
公开(公告)日：2018-05-29
申请号：US14440934
申请日：2013-10-10
Applicant: ASML Netherlands B.V.
Inventor： Erik Roelof Loopstra , Andrei Mikhailovich Yakunin , Vadim Yevgenyevich Banine , Andrey Nikipelov , Edgar Alberto Osorio Oliveros , Alexander Matthijs Struycken , Bert Pieter Van Drieënhuizen , Jan Bernard Plechelmus Van Schoot
IPC: H05G2/00 , G03F7/20 , H01S3/08 , G21K1/06 , H01S3/23 , H01S3/07 , H01S3/081 , H01S3/13 , H01S3/223
CPC classification number: H05G2/006 , G03F7/70033 , G03F7/7085 , G21K1/062 , G21K2201/067 , H01S3/073 , H01S3/08059 , H01S3/0815 , H01S3/1307 , H01S3/2232 , H01S3/2383 , H05G2/008
Abstract: A method of generating radiation for a lithography apparatus. The method comprises providing a continuously renewing fuel target (50) at a plasma formation location (12) and directing a continuous-wave excitation beam (6) at the plasma formation location such that fuel within the continuously renewing fuel target is excited by the continuous-wave excitation beam to a radiation generating plasma.
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公开(公告)号：US09482960B2
公开(公告)日：2016-11-01
申请号：US14181076
申请日：2014-02-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Andrei Mikhailovich Yakunin , Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Harmen Klaas Van Der Schoot , Lucas Henricus Johannes Stevens , Maarten Van Kampen
IPC: G03F7/20 , B82Y10/00 , B82Y40/00 , C01B31/04 , G02B5/08 , G02B5/20 , G02B27/00 , G03F1/24 , G03F1/62 , G21K1/06 , H01B1/04 , H01B1/24 , G03B27/54
CPC classification number: G03F1/64 , B82Y10/00 , B82Y40/00 , C01B32/20 , G02B5/0816 , G02B5/0891 , G02B5/204 , G02B5/208 , G02B27/0006 , G03B27/54 , G03F1/24 , G03F1/62 , G03F7/70058 , G03F7/702 , G03F7/70916 , G03F7/70958 , G03F7/70983 , G21K1/062 , G21K2201/061 , H01B1/04 , H01B1/24
Abstract: A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.
Abstract translation: 包括石墨烯的防护薄膜组件被构造并布置成用于EUV掩模版。 多层反射镜包括石墨烯作为最外层。
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公开(公告)号：US09442380B2
公开(公告)日：2016-09-13
申请号：US14439476
申请日：2013-10-03
Applicant: ASML Netherlands B.V.
Inventor： Ramin Badie , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Antonius Theodorus Wilhelmus Kempen , Andrei Mikhailovich Yakunin , Hendrikus Robertus Marie Van Greevenbroek , Koen Gerhardus Winkels
CPC classification number: G03F7/70033 , H05G2/003 , H05G2/006 , H05G2/008
Abstract: A radiation source (e.g., LPP—laser produced plasma source) for generation of extreme UV (EUV) radiation has at least two fuel particle streams having different trajectories. Each stream is directed to cross the path of an excitation (laser) beam focused at a plasma formation region, but the trajectories are spaced apart at the plasma formation region, and the streams phased, so that only one stream has a fuel particle in the plasma formation region at any time, and so that when a fuel particle from one stream is generating plasma and EUV radiation at the plasma generation region, other fuel particles are sufficiently spaced so as to be substantially unaffected by the plasma. The arrangement permits potential doubling of the radiation intensity achievable for a particular fuel particle size.
Abstract translation: 用于产生极端UV（EUV）辐射的辐射源（例如，LPP激光产生的等离子体源）具有至少两个具有不同轨迹的燃料粒子流。 每个流被引导以跨过等离子体形成区域聚焦的激发（激光）束的路径，但是轨迹在等离子体形成区域处被间隔开，并且流被相位化，使得仅一条流在 等离子体形成区域，并且使得当来自一个流的燃料粒子在等离子体产生区域产生等离子体和EUV辐射时，其它燃料颗粒被充分间隔开，以致基本上不受等离子体的影响。 该布置允许对于特定燃料粒子尺寸可实现的辐射强度的潜在加倍。
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公开(公告)号：US20150286145A1
公开(公告)日：2015-10-08
申请号：US14438482
申请日：2013-09-23
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70033 , G02B17/0657 , G02B17/0808 , G03F7/70041 , G03F7/7005 , H05G2/006 , H05G2/008
Abstract: A radiation source for a lithographic apparatus uses a plurality of fiber lasers to ignite a fuel droplet at an ignition location to generate EUV radiation. The fiber lasers may be provided to emit parallel to an optical axis and a telescopic optical system is provided to focus the lasers at the ignition location, or the lasers may be directed towards the optical axis with a final focus lens being used to reduce beam waist. The lasers may be provided in two or more groups to allow them to be independently controlled and some of the lasers may be focused at a different location to provide a pre-pulse. Radiation from fiber lasers may also be combined using dichroic mirrors.
Abstract translation: 用于光刻设备的辐射源使用多个光纤激光器在点火位置点燃燃料液滴以产生EUV辐射。 可以将光纤激光器设置成平行于光轴发射，并且提供伸缩光学系统以将激光器聚焦在点火位置，或者激光器可以被引导到光轴，最终聚焦透镜用于减小光束腰部 。 激光器可以以两个或更多个组提供，以允许它们被独立控制，并且一些激光器可以聚焦在不同的位置以提供预脉冲。 光纤激光器的辐射也可以使用二向色镜来组合。
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