Abstract:
A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.
Abstract:
Various systems, methods, and programs embodied in computer-readable mediums are provided for implementing a contest between various social networks. A contest is staged between at least two teams using a server accessible by a plurality of clients. The contest requires each of the teams to achieve a predefined goal. The membership to each one of the teams is restricted to a plurality of individuals associated with a respective one of a plurality of social networks accessible by the server.
Abstract:
Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
Abstract:
A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.
Abstract:
Systems and methods for generating a bid for use in a content auction include providing brand-related content to a client device for presentation with first-party content. The method also includes receiving activity data indicative of online activity regarding the brand and analyzing the activity data to determine a brand impact score. The method further includes generating a content auction bid using the brand impact score.
Abstract:
A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.
Abstract:
A magnetic memory device and a method of fabricating the same. The magnetic memory device includes a free layer, a write element, and a read element. The write element changes the magnetization direction of the free layer, and the read element senses the magnetization direction of the free layer. Herein, the write element includes a current confinement layer having a width smaller than the minimum width of the free layer to locally increase the density of a current flowing through the write element.
Abstract:
A liquid crystal display includes: a liquid crystal panel; a plurality of lamps supplying light to the liquid crystal panel; external electrodes provided at both ends of the lamps; common electrodes including a plurality of electrode holders for fixing the external electrodes of the lamps in a surrounding manner and supplying power to the lamps; a first support side disposed on the external electrodes provided at the plurality of lamps and the common electrodes; and a common electrode support extending from the first support side to support the common electrodes and having a heat circulation passage.
Abstract:
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
Abstract:
A driving method of a plasma display panel in which scan electrode lines and sustain electrode lines are parallel to each other and address electrode lines are spaced from and intersect the scan electrode lines and the sustain electrode lines, includes temporally dividing a unit frame into a plurality of subfields, generating a driving signal having a reset period, an address period, and a sustain period for each subfield, detecting an average signal level for the unit frame, alternately applying a first sustain pulse which reaches a first voltage with a rising slope and a second sustain pulse which reaches a ground voltage with a falling slope to the scan electrode lines and the sustain electrode lines, and controlling a timing of alternately applying in accordance with the average signal level for the unit frame.