公开(公告)号：US20090122461A1

公开(公告)日：2009-05-14

申请号：US12358175

申请日：2009-01-22

Applicant: Pyeong Won OH ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

Inventor： Pyeong Won OH ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

IPC: H01G4/06

CPC classification number: H01L28/56 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31616 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

Abstract translation: 公开了一种用于半导体器件的电容器，包括：在半导体衬底上形成在预定下部结构上的下电极; 形成在下电极上并具有低漏电流特性的氧氮化铝膜; 形成在氮氧化铝膜上并具有比氮氧化铝膜更高的介电常数的氧化钇膜; 和形成在氧氮化钇膜上的上电极及其制造方法。

公开(公告)号：US20070148848A1

公开(公告)日：2007-06-28

申请号：US11614975

申请日：2006-12-22

Applicant: Gyu Hyun Kim ,  Geun Min Choi ,  Baik II Choi ,  Dong Joo Kim ,  Ji Hye Han

Inventor： Gyu Hyun Kim ,  Geun Min Choi ,  Baik II Choi ,  Dong Joo Kim ,  Ji Hye Han

IPC: H01L21/8238

CPC classification number: H01L21/823842

Abstract: Disclosed herein is a method for forming a dual gate of a semiconductor device. The method comprises the steps of forming a first polysilicon layer doped with p-type impurity ions and a second polysilicon layer doped with n-type impurity ions on a first region and a second region of a semiconductor substrate, respectively, and sequentially subjecting the surfaces of the first and second polysilicon layers to first wet cleaning, second wet cleaning and dry cleaning.

Abstract translation: 本文公开了一种用于形成半导体器件的双栅极的方法。 该方法包括以下步骤：分别在半导体衬底的第一区域和第二区域上形成掺杂有p型杂质离子的第一多晶硅层和掺杂n型杂质离子的第二多晶硅层， 的第一和第二多晶硅层进行第一次湿式清洗，第二次湿式清洗和干洗。

公开(公告)号：US07741671B2

公开(公告)日：2010-06-22

申请号：US12358175

申请日：2009-01-22

Applicant: Pyeong Won Oh ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

Inventor： Pyeong Won Oh ,  Woo Jin Kim ,  Hoon Jung Oh ,  Hyo Gun Yoon ,  Hyo Seob Yoon ,  Baik II Choi

IPC: H01L21/00

CPC classification number: H01L28/56 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31616 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.

Abstract translation: 公开了一种用于半导体器件的电容器，包括：在半导体衬底上形成在预定下部结构上的下电极; 形成在下电极上并具有低漏电流特性的氧氮化铝膜; 形成在氮氧化铝膜上并具有比氮氧化铝膜更高的介电常数的氧化钇膜; 和形成在氧氮化钇膜上的上电极及其制造方法。