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公开(公告)号：US12158640B2
公开(公告)日：2024-12-03
申请号：US17620714
申请日：2021-11-26
Inventor： Rui He , Wenlong Ye , Xindong Mei , Wei Cheng
IPC: G02F1/13 , G02F1/1334 , G02F1/1335 , G02F1/13363
Abstract: A display panel and a display device are disclosed. The display panel includes a display liquid crystal cell, a first polarizer, a switchable liquid crystal cell, and a second polarizer. A first substrate and a second substrate of the switchable liquid crystal cell are formed of transparent flexible substrates which are substituted for glass substrates, and a first phase compensation film group including at least a first C-type compensation film group is provided, which is used to compensate the phase difference caused by the phase retardation when the polarized light passes through the transparent flexible substrates, thereby reducing the thickness and weight of the display panel.
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公开(公告)号：US12154470B2
公开(公告)日：2024-11-26
申请号：US17617608
申请日：2021-10-29
Inventor： Haiming Cao , Yanqing Guan , Chao Tian , Fei Ai , Guanghui Liu , Zhifu Li
IPC: G09G3/20 , G09G3/3266 , G09G3/36 , H01L29/786
Abstract: A gate driving circuit and a display panel are disclosed. A pull-up control module and a pull-down module of each stage gate driving unit are connected to a first node. A thin film transistor in the pull-up control module and/or pull-down module that is connected to the first node is an oxide thin film transistor, such that a leakage current of the first node is reduced due to the advantage of the small off-state leakage current of the oxide thin film transistor. Therefore, the voltage level of the first node can remain stable during a pull-up stage and a touch suspension stage.
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公开(公告)号：US12153318B2
公开(公告)日：2024-11-26
申请号：US17772199
申请日：2022-03-31
Inventor： Wenqiang Yu , Chao Wang
IPC: G02F1/1368 , G02F1/1333 , G02F1/1362 , H01L27/12
Abstract: Embodiment of the present application discloses an array substrate and a display panel. An active layer includes a first connection segment, a second connection segment, and a third connection segment connected in sequence. A part of the second connection segment of the active layer overlaps with a data line, and another part of the second connection segment locates between two adjacent data lines. The third connection segment locates between the two adjacent data lines. A drain electrode contacts a part of the active layer exposed between the two adjacent data lines.
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公开(公告)号：US20240387563A1
公开(公告)日：2024-11-21
申请号：US17597235
申请日：2021-12-24
Inventor： Hailong PAN
IPC: H01L27/12 , G02F1/1362
Abstract: A display panel (100), comprising a driving chip (201) and bonding pad groups (202), which are electrically connected to each other, and an array substrate (10) and a color filter (30), which are arranged opposite each other, wherein the array substrate (10) comprises a first area (A1) and a second area (A2), which are arranged in a first direction (D1); the driving chip (201) is located in a third area (A3), which corresponds to an opening (301) in the color filter (30) on the side of the array substrate (10) that is close to the color filter (30); and the orthographic projection of the driving chip (201) overlaps the orthographic projection of the bonding pad group (202) on a first plane parallel to the first direction (D1) and perpendicular to the display panel (100).
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公开(公告)号：US20240387556A1
公开(公告)日：2024-11-21
申请号：US18373361
申请日：2023-09-27
Inventor： Fei AI , Zhuang LI , Wenhui XIONG
IPC: H01L27/12
Abstract: A semiconductor device and a display panel are disclosed. The semiconductor device includes an insulating substrate and a thin film transistor on the insulating substrate. The thin film transistor includes a protrusion and an active layer. The protrusion includes a first sub-protrusion on the insulating substrate, and a second sub-protrusion on the first sub-protrusion. The second sub-protrusion completely covers a side of the first sub-protrusion away from the insulating substrate. The active layer includes a first ohmic contact portion, a channel portion connected to the first ohmic contact portion, and a second ohmic contact portion connected to the channel portion. The first ohmic contact portion is at least partially disposed on the insulating substrate. The channel portion is fitted to a side surface of the first sub-protrusion and a side surface of the second sub-protrusion.
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Patent Agency Ranking
公开(公告)号：US12148839B2
公开(公告)日：2024-11-19
申请号：US17759866
申请日：2022-07-28
Inventor： Chengzhi Luo
IPC: H01L29/786 , G02F1/1368 , H01L27/12 , H01L29/66 , H10K59/12
Abstract: The present application provides a semiconductor device and an electronic device. In the semiconductor device, a metal layer is provided on the side of the active layer facing the buffer layer, and the metal layer includes at least one metal block, so that the metal block is in direct contact with at least part of the active layer, then when the active layer is converted from amorphous silicon to polycrystalline silicon, due to the catalytic effect of the metal block, the size of the crystal grains in the polycrystalline silicon becomes larger, which reduces the crystal grain boundaries in the polycrystalline silicon and improves the mobility of the semiconductor device.
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公开(公告)号：US20240377046A1
公开(公告)日：2024-11-14
申请号：US18253591
申请日：2023-03-30
Inventor： Shuliang YU
IPC: F21V15/01
Abstract: The disclosure provides a display device, and the display device includes a back frame and an optical diaphragm group. The back frame includes a bottom plate and a plurality of connection plates connected to a same side of the bottom plate to define an accommodation groove in the back frame, a side of the connection plates close to the accommodation groove is provided with a sliding slot, and a notch of the sliding slot is provided facing the accommodation groove. The optical diaphragm group is disposed in the accommodation groove and clamped into the sliding slot. The back frame further includes at least one fixation member disposed on the connection plates, and the optical diaphragm group further includes at least one connection member matching and connected to the at least one fixation member.
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公开(公告)号：US20240371885A1
公开(公告)日：2024-11-07
申请号：US17623674
申请日：2021-12-20
Inventor： Yiyu GUO
IPC: H01L27/12
Abstract: An array substrate and a display panel are provided. The array substrate includes transistors. Each transistor includes an active portion and a first gate, and the active portion is disposed on the substrate. The active portion includes at least one semiconductor portion and at least one epitaxial sharp corner portion connected to the semiconductor portion and protruding from the semiconductor portion in a first direction. In the first direction, the epitaxial sharp corner portion is located on one side of the semiconductor portion, the first gate is located on the semiconductor portion and the epitaxial sharp corner portion, and the first gate extends along the first direction.
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公开(公告)号：US12135486B2
公开(公告)日：2024-11-05
申请号：US17289764
申请日：2021-03-17
Inventor： Jiyue Song , Fei Ai
IPC: G02F1/1368 , G02F1/1362 , H01L27/12
Abstract: Embodiments of the present disclosure disclose a driving substrate, a display panel, and a manufacturing method of the driving substrate. In the driving substrate, a first electrode is connected to a first thin film transistor; a photosensitive diode includes a first semiconductor layer and an intrinsic semiconductor layer sequentially disposed on the first electrode, the intrinsic semiconductor layer wraps the first semiconductor layer and the first electrode; and a second conductive layer is disposed on the photosensitive diode. The second conductive layer includes a second electrode, and the second electrode covers the photosensitive diode.
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公开(公告)号：US20240363761A1
公开(公告)日：2024-10-31
申请号：US18255263
申请日：2023-02-28
Inventor： Zemin HU
IPC: H01L29/786 , H01L27/12
CPC classification number: H01L29/78696 , H01L27/1237
Abstract: A semiconductor device and an electronic device are provided by the present disclosure. The active layer is provided by the semiconductor device to include a conductor portion, so that a projection of the conductor portion on the substrate is located within a projection of the gate on the substrate. The conductor portion is not controlled by the gate, so the width of the channel portion may be controlled by controlling the width of the gate and the width of the conductor portion, so that the channel length may break through the accuracy limit of the exposure machine, thereby improving the mobility of the thin film transistor.
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