公开(公告)号：US20240387556A1

公开(公告)日：2024-11-21

申请号：US18373361

申请日：2023-09-27

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fei AI ,  Zhuang LI ,  Wenhui XIONG

IPC: H01L27/12

Abstract: A semiconductor device and a display panel are disclosed. The semiconductor device includes an insulating substrate and a thin film transistor on the insulating substrate. The thin film transistor includes a protrusion and an active layer. The protrusion includes a first sub-protrusion on the insulating substrate, and a second sub-protrusion on the first sub-protrusion. The second sub-protrusion completely covers a side of the first sub-protrusion away from the insulating substrate. The active layer includes a first ohmic contact portion, a channel portion connected to the first ohmic contact portion, and a second ohmic contact portion connected to the channel portion. The first ohmic contact portion is at least partially disposed on the insulating substrate. The channel portion is fitted to a side surface of the first sub-protrusion and a side surface of the second sub-protrusion.