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Patent Agency Ranking
公开(公告)号：US20240387556A1
公开(公告)日：2024-11-21
申请号：US18373361
申请日：2023-09-27
Inventor： Fei AI , Zhuang LI , Wenhui XIONG
IPC: H01L27/12
Abstract: A semiconductor device and a display panel are disclosed. The semiconductor device includes an insulating substrate and a thin film transistor on the insulating substrate. The thin film transistor includes a protrusion and an active layer. The protrusion includes a first sub-protrusion on the insulating substrate, and a second sub-protrusion on the first sub-protrusion. The second sub-protrusion completely covers a side of the first sub-protrusion away from the insulating substrate. The active layer includes a first ohmic contact portion, a channel portion connected to the first ohmic contact portion, and a second ohmic contact portion connected to the channel portion. The first ohmic contact portion is at least partially disposed on the insulating substrate. The channel portion is fitted to a side surface of the first sub-protrusion and a side surface of the second sub-protrusion.
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公开(公告)号：US20250142963A1
公开(公告)日：2025-05-01
申请号：US18524299
申请日：2023-11-30
Inventor： Zhuang LI , Chunpeng ZHANG , Fei AI , Jianfeng YUAN , Zhifu LI
IPC: H01L27/12
Abstract: An array substrate and a display panel are provided, which include a base and a plurality of semiconductor devices disposed on the base. An active defining portion is provided on the base, a junction of a connecting surface and a first top surface of the active defining portion is a first edge. The semiconductor device includes an active layer and a gate, one or more single crystal starting points of the active layer correspond to the first edge. An area where two rows of single crystal particles parallel to the first edge on both sides of the one or more single crystal starting points is a single crystal area, the channel portion of the active layer is disposed in the single crystal area, and the gate is provided with in a direction perpendicular to the base and covers only one row of the two rows of single crystal particles.
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公开(公告)号：US20240363758A1
公开(公告)日：2024-10-31
申请号：US18247554
申请日：2023-02-28
Inventor： Zhifu LI , Guanghui LIU , Chao DAI , Fei AI , Dewei SONG , Zhuang LI
IPC: H01L29/786 , H01L29/417
CPC classification number: H01L29/78603 , H01L29/41733 , H01L29/78633 , H01L29/78696
Abstract: A display panel is provided by embodiments of the present application, a thin film transistor includes: a first gate electrode including a first side slope, a second side slope oppositely arranged, and a top surface; a first gate insulating layer covering the first gate electrode; a semiconductor layer arranged on the first gate insulating layer, wherein the semiconductor layer includes a first end, a second end, and a channel arranged between the first end and the second end, the second end is at least partially on the top surface, the channel is at least partially located on the first side slope.
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公开(公告)号：US20250072093A1
公开(公告)日：2025-02-27
申请号：US17925002
申请日：2022-11-07
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG , Zhuang LI
IPC: H01L29/45 , H01L29/49 , H01L29/786
Abstract: A display panel is provided. The display panel includes a substrate and includes a first ohmic contact structure, a first boss, a second ohmic contact structure, a semiconductor structure, and a gate which are stacked on the substrate. The first boss includes at least one sidewall. By arranging the semiconductor structure on the sidewall of the first boss, a length of a channel can be shortened by using an existing technology, and a dimension of a thin film transistor can be reduced, so that an integration level of the thin film transistor in the display panel can be improved.
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公开(公告)号：US20240194792A1
公开(公告)日：2024-06-13
申请号：US18086890
申请日：2022-12-22
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG , Zhuang LI
IPC: H01L29/786 , H01L29/417
CPC classification number: H01L29/78696 , H01L29/41733
Abstract: The present application provides a thin film transistor substrate and an electronic device. The thin film transistor substrate includes: a substrate; a boss including an undercut structure, the undercut structure is located on a side wall of the boss; a filler located in the undercut structure; and an active layer located on the boss and the substrate, the active layer includes a channel, and the channel covers the undercut structure and the filler.
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