公开(公告)号：US20240234577A1

公开(公告)日：2024-07-11

申请号：US17926189

申请日：2022-11-11

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Zhifu LI ,  Guanghui LIU ,  Chao DAI ,  Fei AI ,  Dewei SONG ,  Chengzhi LUO

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/42392

Abstract: A semiconductor device and an electronic device are provided. A through hole is formed in an insulating layer and located on a first active layer. A thin-film transistor layer includes a third active layer. At least part of the third active layer is located on a sidewall of the through hole. One side of the third active layer is connected to a first active layer, and the other side of the third active layer is connected to a second active layer, so that a channel length is reduced, short channel effect is reduced, on-state current is increased, and power consumption is reduced.

公开(公告)号：US20240363758A1

公开(公告)日：2024-10-31

申请号：US18247554

申请日：2023-02-28

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhifu LI ,  Guanghui LIU ,  Chao DAI ,  Fei AI ,  Dewei SONG ,  Zhuang LI

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78603 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/78696

Abstract: A display panel is provided by embodiments of the present application, a thin film transistor includes: a first gate electrode including a first side slope, a second side slope oppositely arranged, and a top surface; a first gate insulating layer covering the first gate electrode; a semiconductor layer arranged on the first gate insulating layer, wherein the semiconductor layer includes a first end, a second end, and a channel arranged between the first end and the second end, the second end is at least partially on the top surface, the channel is at least partially located on the first side slope.