Abstract:
Method of chemical polishing of planar silicon structures by use of a silicon semiconductor body having planar surfaces with recesses therein opening through the surface. A stop layer is formed on the surface and then the recesses are filled with a filling material. The semiconductor structure with the filled surface is then polished by the use of a polishing pad and applying to the polishing pad a first active chemical agent and applying a second chemical agent to the pad at the same time that the first chemical agent is being applied. The polishing is continued until the stop layer is reached.
Abstract:
AN IMPROVEMENT IN THE ECONOMY OF PACKAGING BY LOCKING OUT HARMFUL PARTICULATES BEFORE APPLICATON OF INSULATION PACKING AND SAVINGS IN REWORK OR REPAIR OF INSULATION PACKAGED AND ENCAPSULATED ELECTRICAL COMPONENTS, ASSEMBLIES OR CIRCUITRY. THE THREE COMPONENT PACKAGE STRUCTURE PROVIDED IS PREFABRICATED ELECTRONIC CIRCUITRY COMPONENTS STRUCTURE HAVING A CONFORMAL COATING OF RELATIVELY SOLVENT INSOLUBLE POLYMERS AS POLYMERS OF PARA-XYLYLENE MATERIAL OR RELATIVELY SOLVENT INSOLUBLE POLYMERS OF POLYPHENYLENE AND CURING AGENT INTERMEDIATE THE ELECTRONIC COMPONENTS AND A CONVENTIONALLY APPLIED RELATIVELY SOLVENT SOLUBLE COATING OF INSULATING RESIN MATERIAL OR CONVENTIONAL FOAM AS POLYURETHANE, EPOXY RESIN, AND THE LIKE POTTING MATERIAL APPLIED THEREOVER. IN ADDITION TO IMPROVING UPON THE INSULATION ENCAPSULATED PREFABRICATED ELECTRONIC CIRCUITRY BY REDUCING THE NUMBER OF DEFECTIVE ELECTRONIC UNIT MANUFACTURED, THIS IMPROVED PACKAGING ALSO IS OF ECONOMIC VALUE TO THE INDUSTRY BY ENABLING ECONOMIC CHEMICAL REMOVAL OF THE INSULATING FOAM OR POTTING COMPOUND AND REWORKING THE CIRCUITRY OR REPLACEMENT OF A DEFECTIVE CIRCUITRY COMPONENT.
FURTHER, THE MULTIPLE COATINGS PROVIDE MORE ASSURANCE OF MAINTAINING RESONATE FREQUENCY AND AIDS IN IMPROVING VIBRATION AND SHOCK RESISTANCE.
Abstract:
A boron-doped silicon carbide light-emitting diode chip is mounted, such as on a support member of porous ceramic or other material of similarly low thermal conductivity, so as to operate at a temperature of at least 150*C. Such a construction increases the amount of light produced by the boron-doped silicon carbide diode, due to increased operating temperature. A cover is placed over the diode to prevent convection cooling, thus further increasing the operating temperature and hence the light output. Instead of boron doping, the silicon carbide diode can be doped with other materials that produce similarly deep acceptor levels.
Abstract:
A METHOD FOR APPLYING A COATING OF A POLYIMIDE TO A SURFACE, COMPRISING THE STEPS OF APPLYING A LAYER OF A SOLUTION OF A POLYIMIDE POLYMERIZABLE BY CONDENSATION POLYMERIZATIONL TO SAID SURFACE, AND POLYMERING THE LAYER AT AN ELEVATED TEMPERATURE AND AT A SUPER ATOMOSPHERIC PRESSURE EXERTED BY AN INERT GAS APPLIED DIRECTLY TO SAID LAYER, TO PROVIDE A POYMERIC COATING UNDISTORTED BY THE CHEMICAL CONDENSATION PRODUCTS OF THE CONDENSATION POLYMERIZAION EVAPORATING THEREFROM.
Abstract:
The disclosure relates to a temperature regulating system for maintaining temperatures relatively constant throughout a capsule containing electronic components and for causing gradual change, if any, of temperature caused by changes in the outer environment. This is provided by placing the components in a high thermal conductivity material which is enclosed by a low thermal conductivity material. Electronic components and electrical components are glued and potted in apertures within the interior high thermal conductivity member by means of a substantially electrically nonconducting and thermally highly conductive material such as an epoxy filled with beryllium oxide. According to a second embodiment the inner capsule is molded from a high thermal conductivity ceramic such as aluminum oxide or beryllium oxide. It is also possible to encapsulate the components prior to baking of the ceramic material. According to a third embodiment, the electrical and electronic components are potted directly in a beryllium oxide epoxy which will keep the components mechanically rigid within the potting material. Such a material would have substantially no electrical conductivity and very high thermal conductivity.
Abstract:
A method for the manufacture of transistors whereby groups of transistor lead wires are rigidly held during attachment of the transistor elements to the wires and are flexibly held during encapsulation of the transistor elements in a protective plastic nodule so as to prevent damage to the transistor elements due to thermal expansion.
Abstract:
A low thermal expansion insulating cement is formulated from a high temperature resinous varnish and a finely divided inert inorganic filler having a negative coefficient of thermal expansion. The composition is employed as an insulator and binder in microminiature circuit devices employing microminiature circuit elements.
Abstract:
ACCORDING TO THE DISCLOSURE, THERE IS DISCLOSED A MINIATURE ELECTROMECHANICAL JUNCTION TRANSDUCER, THE OPERATION OF WHICH IS BASED ON PIEZOJUNCTION EFFECT. THE MECHANICAL INPUT COUPLING MEMBER, IN THE SUBJECT INVENTION, AS DISTINQUISHED FROM THE PRIOR ART, IS FORMED IN SITU AND SPREAD OVER THE TOP OF THE MESA STRUCTURE TO FORM AN EXACT DUPLICATE OF THE MESA SURFACE AT THE AREAOF CONTACT.
Abstract:
THE METHOD OF ENCAPSULATING A TRANSISTOR INVOLVING MOUNTING A TRANSISTOR TO THE LEAD POSTS OF A HEADER. THE HEADER IS A PLURALITY OF LEAD POSTS FIXED IN POSITION BY A FIRST INSULATIVE MATERIAL. ENCAPSULATING THE TRANSISTOR IN A SECOND INSULATIVE MATERIAL AND SELECTIVELY SOLVENT REMOVING THE FIRST INSULATIVE MATERIAL.