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    Voltage-dependent non-linear resistance ceramic composition
    22.
    发明授权
    Voltage-dependent non-linear resistance ceramic composition 失效
    电压依赖非线性电阻陶瓷组成

    公开(公告)号：US4897219A

    公开(公告)日：1990-01-30

    申请号：US268618

    申请日：1988-11-07

    申请人： Keiichi Noi ,  Akihiro Takami ,  Kazuhide Ebine ,  Kimiko Kumazawa

    发明人： Keiichi Noi ,  Akihiro Takami ,  Kazuhide Ebine ,  Kimiko Kumazawa

    IPC分类号： C04B35/47 ,  H01C7/115

    CPC分类号： H01C7/115 ,  C04B35/47

    摘要： It is a voltage-dependent non-linear resistance ceramic composition comprising SrTiO.sub.3 as host material, Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 as accelerating agent for semiconductorization, thereby changing crystal to a low resistance, and changing crystal boundary to a high resistance.In case Dy.sub.2 O.sub.3 or Dy.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Ag, Ce, La, Sc, Y, Cs, Au, Mg, Zr, Sn, Sb, W, Bi, Ni, Fe, Ga, Pt, Tl, Al, Si, Be, Li, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf and Ru. Alternatively, in case Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 and Nb.sub.2 O.sub.5 are used as the accelerating agent for semiconductorization, one kind or more selected from the group consisting of Na, K, Ca, Cd, In, Ba, Pb, Mg, Zr, Sn, Sb, W, Bi, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Ga, Pt, Tl, La, Sc, Y, Cs, and Au.As a result, baristor characteristic is obtainable by means of the high resistance at crystal boundaries and capacitor between crystal granules--crystal boundary--crystal granule.From this matter, an element having both functions of the baristor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elimination.

    摘要翻译： 作为主要材料的SrTiO 3的电压依赖性非线性电阻陶瓷组合物，Dy 2 O 3，Dy 2 O 3，Nb 2 O 5，Ta 2 O 5，Ta 2 O 5，Nb 2 O 5等作为半导体用的加速剂，从而将晶体变为低电阻，将晶界改变为高 抵抗性。 在使用Dy2O3或Dy2O3和Nb2O5作为半导体加速剂的情况下，选自Na，K，Ca，Cd，In，Ba，Pb，Ag，Ce，La，Sc，Y， Cs，Au，Mg，Zr，Sn，Sb，W，Bi，Ni，Fe，Ga，Pt，Tl，Al，Si，Be，Li，Eu，Gd，Tb，Tm，Lu，Th，Ir， Hf和Ru。 或者，在使用Ta2O5或Ta2O5和Nb2O5作为半导体用加速剂的情况下，选自Na，K，Ca，Cd，In，Ba，Pb，Mg，Zr，Sn，Sb， W，Bi，Eu，Gd，Tb，Tm，Lu，Th，Ir，Os，Hf，Ru，Ga，Pt，Tl，La，Sc，Y，Cs和Au。 结果，可以通过晶界处的高电阻和晶粒之间的电容器 - 晶体边界晶粒颗粒获得电阻器特性。 由此，能够获得具有电阻特性和电容器特性两者的元件，并且能够实现浪涌吸收和噪声消除的效果。

    Semiconductive ceramic materials with a voltage-dependent nonlinear resistance
    23.
    发明授权
    Semiconductive ceramic materials with a voltage-dependent nonlinear resistance 失效
    具有电压依赖性非线性电阻的半导体陶瓷材料

    公开(公告)号：US4547314A

    公开(公告)日：1985-10-15

    申请号：US507550

    申请日：1983-06-24

    申请人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    发明人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    IPC分类号： H01C7/10 ,  C04B35/46 ,  C04B35/47 ,  H01C7/115 ,  H01B1/06

    CPC分类号： H01C7/115 ,  C04B35/47

    摘要： Ceramic materials suitable for use in varistors, enabling the same to function not only as such but also as capacitors. The ceramic materials comprise a major proportion of SrTiO.sub.3, the balance being: (1) at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Pr.sub.6 O.sub.11, Sm.sub.2 O.sub.3, Eu.sub.2 O.sub.3, and Dy.sub.2 O.sub.3, for making the materials semiconductive; (2) Na.sub.2 O, for making surge-proof the varistors made from the ceramic materials and for improving their nonlinearity coefficients; and (3) Al.sub.2 O.sub.3, for improving the temperature dependences of the varistor voltages, as well as nonlinearity coefficients, of the varistors. Optionally the ceramic materials may further contain one or more of Ag.sub.2 O, CuO, MnO.sub.2, and SiO.sub.2, for still higher nonlinearity coefficients. Containing Al.sub.2 O.sub.3 in proportions ranging from 0.01 to 1.50 mole parts with respect to 100 mole parts of SrTiO.sub.3, the ceramic compositions make possible the provision of varistors having varistor voltages that hardly change in a temperature range as wide as, for example, from -40.degree. to +120.degree. C.

    摘要翻译： 陶瓷材料适用于压敏电阻，使其不仅能够像电容器一样起作用。 陶瓷材料主要成分为SrTiO3，其余为：（1）Nb2O5，Ta2O5，WO3，La2O3，CeO2，Nd2O3，Y2O3，Pr6O11，Sm2O3，Eu2O3和Dy2O3中的至少一种，用于制造半导体材料; （2）Na2O，用于防止由陶瓷材料制成的压敏电阻，并提高其非线性系数; 和（3）Al2O3，用于改善压敏电阻的压敏电阻电压的温度依赖性以及非线性系数。 任选地，对于更高的非线性系数，陶瓷材料还可以含有一种或多种Ag 2 O，CuO，MnO 2和SiO 2。 相对于100摩尔份的SrTiO 3，含有0.01〜1.50摩尔份的Al 2 O 3的陶瓷组合物能够提供具有在例如-40℃以下的温度范围内难以变化的压敏电阻的压敏电阻 至+120℃

    Ceramic materials with a voltage-dependent nonlinear resistance
    24.
    发明授权
    Ceramic materials with a voltage-dependent nonlinear resistance 失效
    具有电压依赖性非线性电阻的陶瓷材料

    公开(公告)号：US4545929A

    公开(公告)日：1985-10-08

    申请号：US398193

    申请日：1982-07-14

    申请人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    发明人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    IPC分类号： C04B35/47 ,  H01C7/115 ,  H01B1/06

    CPC分类号： H01C7/115 ,  C04B35/47

    摘要： Ceramic materials suitable for use in varistors, consisting essentially of a major proportion of SrTiO.sub.3, the balance being (1) at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11, Eu.sub.2 O.sub.3, and Dy.sub.2 O.sub.3, for making the materials semiconductive, and (2) Na.sub.2 O, for making surge-proof the varistors made from the ceramic materials. As desired, the compositions may further include one or more of Ag.sub.2 O, CuO, MnO.sub.2, and SiO.sub.2 for a higher nonlinearity coefficient. Containing Na.sub.2 O in proportions ranging from approximately 0.02 to 2.50 mole parts, the ceramic compositions make possible the provision of varistors suffering little from current or voltage surges in use.

    摘要翻译： 适用于压敏电阻的陶瓷材料，主要由SrTiO3组成，其余为（1）Nb2O5，Ta2O5，WO3，La2O3，CeO2，Nd2O3，Y2O3，Sm2O3，Pr6O11，Eu2O3和Dy2O3中的至少一种， 用于制造材料半导体，以及（2）Na2O，用于制造由陶瓷材料制成的压敏电阻的防浪涌。 根据需要，组合物可以进一步包括Ag 2 O，CuO，MnO 2和SiO 2中的一种或多种，​​用于较高的非线性系数。 含有大约0.02至2.50摩尔份数的Na 2 O，陶瓷组合物可以提供在使用中几乎不受电流或电压浪涌影响的压敏电阻。

    Semiconductive ceramic materials with a voltage-dependent nonlinear resistance, and process for preparation
    25.
    发明授权
    Semiconductive ceramic materials with a voltage-dependent nonlinear resistance, and process for preparation 失效

    公开(公告)号：US4490318A

    公开(公告)日：1984-12-25

    申请号：US562429

    申请日：1983-12-16

    申请人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    发明人： Masaru Masuyama ,  Susumu Hirooka ,  Nobutatsu Yamaoka

    IPC分类号： C04B35/47 ,  H01C7/115 ,  C04B35/46

    CPC分类号： H01C7/115 ,  C04B35/47

    摘要： Semiconductive ceramic materials suitable for use in varistors, consisting essentially of a major proportion of Sr(.sub.1-x)Ca.sub.x TiO.sub.3, where x is from about 0.01 to about 0.50, the balance being at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11 and Dy.sub.2 O.sub.3, and Na.sub.2 O. The ceramic materials may further comprise a minor proportion of at least one of Ag.sub.2 O, CuO, MnO.sub.2 and SiO.sub.2, and/or a minor proportion of Al.sub.2 O.sub.3. For the fabrication of ceramic bodies of the above compositions there are prepared mixtures of the noted ingredients in powdered form in various possible combinations, plus an organic binder. The mixtures are molded under pressure into desired shape. The moldings are first fired in a reductive or neutral atmosphere and then refired in an oxidative atmosphere. Na.sub.2 O can be included in the initial mixtures in the form of Na.sub.2 O itself and/or other Na compound such as NaF. Alternatively, either Na.sub.2 O itself or NaF is pasted and coated on the moldings after the initial firing thereof. The subsequent refiring of the coated moldings causes thermal diffusion of Na.sub.2 O therein.

    Current restriction element responsive to applied voltage
    26.
    发明授权
    Current restriction element responsive to applied voltage 失效
    响应于施加的电压的电流限制元件

    公开(公告)号：US4484251A

    公开(公告)日：1984-11-20

    申请号：US425076

    申请日：1982-09-20

    申请人： Sho Masujima ,  Yoshishige Towatari ,  Shoichi Iwaya ,  Hitoshi Masumura ,  Hisao Abe ,  Norimasa Sakamoto

    发明人： Sho Masujima ,  Yoshishige Towatari ,  Shoichi Iwaya ,  Hitoshi Masumura ,  Hisao Abe ,  Norimasa Sakamoto

    IPC分类号： H01C7/115 ,  H01G7/06 ,  H01G4/10 ,  H01L29/12

    CPC分类号： H01G7/06 ,  H01C7/115

    摘要： A current restriction device for alternate circuit with small size, low producing cost and low power loss has been found by using a ferro-electric body with rectangular hysterisis characteristics. Said device is used for instance as a ballast for restricting current in a fluorescent lamp. Said ferro-electric body has main component of B.sub.a T.sub.i O.sub.3, additive of S.sub.r or P.sub.b for substitution of part of B.sub.a and Z.sub.n or S.sub.n for substitution of part of T.sub.i, and a mineralizer of M.sub.n o or C.sub.r2 O.sub.3. The voltage-current characteristics of said ferro-electric body show non-linearity that the impedance ratio (Z.sub.2 /Z.sub.1) of the impedance Z.sub.2 measured with alternate field of 500 volts/mm to the impedance Z.sub.1 measured with alternate field of 5 volts/mm is less than 1/10.

    摘要翻译： PCT No.PCT / JP82 / 00047 Sec。 371日期1982年9月20日 102（e）1982年9月20日PCT提交1982年2月20日PCT公布。 出版物WO83 / 0302800 日期：1983年9月1日。通过使用具有矩形滞后特性的铁电体，发现了具有体积小，生产成本低，功率损耗小的交流电路限流装置。 所述装置例如用作限制荧光灯中的电流的镇流器。 所述铁电体具有BaTiO3的主要成分，Sr或Pb的添加剂，用于取代一部分Ba和Zn或Sn以取代部分Ti，以及MnO或Cr2O3的矿化剂。 所述铁电体的电压 - 电流特性显示出以500伏/毫米的交变场测量的阻抗Z2的阻抗比（Z2 / Z1）与以5伏/毫米的交变场测量的阻抗Z1的阻抗比（Z2 / Z1）非线性 小于1/10。

    Barrier layer circuit element and method of forming
    28.
    发明授权
    Barrier layer circuit element and method of forming 失效
    障碍层电路元件和形成方法

    公开(公告)号：US3561106A

    公开(公告)日：1971-02-09

    申请号：US3561106D

    申请日：1968-07-03

    申请人： UNIV IOWA STATE RES FOUND INC

    发明人： MCGEE THOMAS D

    IPC分类号： H01C7/02 ,  H01C7/04 ,  H01C7/115 ,  H01G4/12 ,  H01L21/00 ,  H01L7/02

    CPC分类号： H01G4/1272 ,  H01C7/025 ,  H01C7/045 ,  H01C7/115 ,  H01L21/00 ,  Y10S438/918

    摘要： A FERROELECTRIC CRYSTAL SUCH AS BARIUM TITANATE, IS UNIFORMLY DOPED TO PRODUCE AN N-TYPE SEMCONDUCTOR. ELECTRON-ACCEPTOR IONS ARE THEN ADDED TO THE SURFACE OF THE CRYSTAL TO PRODUCE A SURFACE BARRIER LAYER WHEREIN THE ELECTRON-DONOR IONS OF THE ORIGINAL N-TYPE SEMICONDUCTOR CRYSTAL ARE EXACTLY COMPENSATED BY THE ADDED ELECTRONIC ACCEPTOR IONS. THE RESISTIVITY OF THE COMPENSATED LAYER IS VERY HIGH; AND THE LAYER DEFINES A JUNCTION OF HIGH DIELECTRIC CONSTANT CAPABLE OF STORING A RELATIVELY LARGE ELECTRIC CHARGE THUS PRODUCING A CAPACITOR. THIS BARRIER LAYER MAY ALSO SERVE AS A DIODE FOR RECTIFICATION, OR A TEMPERATURE-SENSITIVE RESISTOR, OR A CURRENT- OR VOLTAGESENSITIVE RESISTOR. IN ONE EMBODIMENT, THE ACCEPTOR IONS ARE PROVIDED IN THE FORM OF A METALLIC OXIDE AND SILVER ELECTRODES CONTACT THE CRYSTAL. WHEN THE COMBINATION IS FIRED IN A SUITABLE ATMOSPHERE, THE OXIDE IS REDUCED AND THE METAL DIFFUSES INTO THE N-TYPE CRYSTAL TO PRODUCE THE COMPENSATED LAYER. THUS, AN ELECTRONIC ELEMENT IS PROVIDED IN A SINGLE PROCESS STEP WITH THE SILVER ELECTRODES ALLOYING WITH THE REDUCED OXIDE ON THE SURFACE OF THE CRYSTAL.

    ELECTRONIC COMPONENT
    29.
    发明公开
    ELECTRONIC COMPONENT 审中-公开

    公开(公告)号：US20240161949A1

    公开(公告)日：2024-05-16

    申请号：US18420936

    申请日：2024-01-24

    申请人： Murata Manufacturing Co., Ltd.

    发明人： Masakiyo NAGATOMO ,  Yoshinobu SAKI ,  Keisuke ISOGAI

    IPC分类号： H01C1/148 ,  H01C1/14 ,  H01C7/02 ,  H01C7/04 ,  H01C7/115 ,  H01G4/12 ,  H01G4/248

    CPC分类号： H01C1/148 ,  H01C1/1406 ,  H01C1/1413 ,  H01G4/248 ,  H01C7/025 ,  H01C7/045 ,  H01C7/115 ,  H01G4/1209

    摘要： In an electronic component including a ceramic body and an external electrode, the external electrode includes a resin layer including a conductive powder and a plating film in direct contact with the resin layer. The plating film includes a metal with a face-centered cubic structure, and a value of F is about 0.20 or more and about 0.50 or less, where F=(P−P0)/(1−P0), P0=I0(111)/{I0(111)+I0(200)+I0(220)} and P=I(111)/{I(111)+I(200)+I(220)}, and I0 (111), I0 (200), and I0 (220) are diffraction intensities of a (111) plane, a (200) plane, and a (220) plane obtained from known powder X-ray diffraction data for a metal in the plating film, and I (111), I (200), and I (220) are diffraction intensities of a (111) plane, a (200) plane, and a (220) plane obtained from an X-ray diffraction pattern of the plating film.