公开(公告)号：US3561106A

公开(公告)日：1971-02-09

申请号：US3561106D

申请日：1968-07-03

申请人： UNIV IOWA STATE RES FOUND INC

发明人： MCGEE THOMAS D

IPC分类号： H01C7/02 ,  H01C7/04 ,  H01C7/115 ,  H01G4/12 ,  H01L21/00 ,  H01L7/02

CPC分类号： H01G4/1272 ,  H01C7/025 ,  H01C7/045 ,  H01C7/115 ,  H01L21/00 ,  Y10S438/918

摘要： A FERROELECTRIC CRYSTAL SUCH AS BARIUM TITANATE, IS UNIFORMLY DOPED TO PRODUCE AN N-TYPE SEMCONDUCTOR. ELECTRON-ACCEPTOR IONS ARE THEN ADDED TO THE SURFACE OF THE CRYSTAL TO PRODUCE A SURFACE BARRIER LAYER WHEREIN THE ELECTRON-DONOR IONS OF THE ORIGINAL N-TYPE SEMICONDUCTOR CRYSTAL ARE EXACTLY COMPENSATED BY THE ADDED ELECTRONIC ACCEPTOR IONS. THE RESISTIVITY OF THE COMPENSATED LAYER IS VERY HIGH; AND THE LAYER DEFINES A JUNCTION OF HIGH DIELECTRIC CONSTANT CAPABLE OF STORING A RELATIVELY LARGE ELECTRIC CHARGE THUS PRODUCING A CAPACITOR. THIS BARRIER LAYER MAY ALSO SERVE AS A DIODE FOR RECTIFICATION, OR A TEMPERATURE-SENSITIVE RESISTOR, OR A CURRENT- OR VOLTAGESENSITIVE RESISTOR. IN ONE EMBODIMENT, THE ACCEPTOR IONS ARE PROVIDED IN THE FORM OF A METALLIC OXIDE AND SILVER ELECTRODES CONTACT THE CRYSTAL. WHEN THE COMBINATION IS FIRED IN A SUITABLE ATMOSPHERE, THE OXIDE IS REDUCED AND THE METAL DIFFUSES INTO THE N-TYPE CRYSTAL TO PRODUCE THE COMPENSATED LAYER. THUS, AN ELECTRONIC ELEMENT IS PROVIDED IN A SINGLE PROCESS STEP WITH THE SILVER ELECTRODES ALLOYING WITH THE REDUCED OXIDE ON THE SURFACE OF THE CRYSTAL.