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1.发明授权Semiconductive ceramic materials with a voltage-dependent nonlinear resistance, and process for preparation 失效具有电压依赖性非线性电阻的半导体陶瓷材料及其制备方法
公开(公告)号：US4438214A
公开(公告)日：1984-03-20
申请号：US441219
申请日：1982-11-12
摘要： Semiconductive ceramic materials suitable for use in varistors, consisting essentially of a major proportion of Sr.sub.(1-x) Ca.sub.x TiO.sub.3, where x is from about 0.01 to about 0.50, the balance being at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11 and Dy.sub.2 O.sub.3, and Na.sub.2 O. The ceramic materials may further comprise a minor proportion of at least one of Ag.sub.2 O, CuO, MnO.sub.2 and SiO.sub.2, and/or a minor proportion of Al.sub.2 O.sub.3. For the fabrication of ceramic bodies of the above compositions there are prepared mixtures of the noted ingredients in powdered form in various possible combinations, plus an organic binder. The mixtures are molded under pressure into desired shape. The moldings are first fired in a reductive or neutral atmosphere and then refired in an oxidative atmosphere. Na.sub.2 O can be included in the initial mixtures in the form of Na.sub.2 O itself and/or other Na compound such as NaF. Alternatively, either Na.sub.2 O itself or NaF is pasted and coated on the moldings after the initial firing thereof. The subsequent refiring of the coated moldings causes thermal diffusion of Na.sub.2 O therein.
摘要翻译： 适用于压敏电阻的半导体陶瓷材料，主要由Sr（1-x）CaxTiO3组成，其中x为约0.01至约0.50，余量为Nb2O5，Ta2O5，WO3，La2O3，CeO2中的至少一种 ，Nd2O3，Y2O3，Sm2O3，Pr6O11和Dy2O3，以及Na2O。 陶瓷材料还可以包含少量的Ag 2 O，CuO，MnO 2和SiO 2中的至少一种和/或少量的Al 2 O 3。 对于上述组合物的陶瓷体的制造，可以以各种可能的组合加上有机粘合剂制备粉末形式的所述成分的混合物。 将混合物在压力下成型为所需形状。 模制品首先在还原性或中性气氛中燃烧，然后在氧化性气氛中被引燃。 Na 2 O可以以Na 2 O本身和/或其它Na化合物如NaF的形式包含在初始混合物中。 或者，Na2O本身或NaF在其初始烧制之后被粘贴并涂覆在模制品上。 涂覆的模制品的随后的再注入导致Na 2 O在其中的热扩散。
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2.发明授权Semiconductive ceramic materials with a voltage-dependent nonlinear resistance 失效具有电压依赖性非线性电阻的半导体陶瓷材料
公开(公告)号：US4547314A
公开(公告)日：1985-10-15
申请号：US507550
申请日：1983-06-24
摘要： Ceramic materials suitable for use in varistors, enabling the same to function not only as such but also as capacitors. The ceramic materials comprise a major proportion of SrTiO.sub.3, the balance being: (1) at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Pr.sub.6 O.sub.11, Sm.sub.2 O.sub.3, Eu.sub.2 O.sub.3, and Dy.sub.2 O.sub.3, for making the materials semiconductive; (2) Na.sub.2 O, for making surge-proof the varistors made from the ceramic materials and for improving their nonlinearity coefficients; and (3) Al.sub.2 O.sub.3, for improving the temperature dependences of the varistor voltages, as well as nonlinearity coefficients, of the varistors. Optionally the ceramic materials may further contain one or more of Ag.sub.2 O, CuO, MnO.sub.2, and SiO.sub.2, for still higher nonlinearity coefficients. Containing Al.sub.2 O.sub.3 in proportions ranging from 0.01 to 1.50 mole parts with respect to 100 mole parts of SrTiO.sub.3, the ceramic compositions make possible the provision of varistors having varistor voltages that hardly change in a temperature range as wide as, for example, from -40.degree. to +120.degree. C.
摘要翻译： 陶瓷材料适用于压敏电阻，使其不仅能够像电容器一样起作用。 陶瓷材料主要成分为SrTiO3，其余为：（1）Nb2O5，Ta2O5，WO3，La2O3，CeO2，Nd2O3，Y2O3，Pr6O11，Sm2O3，Eu2O3和Dy2O3中的至少一种，用于制造半导体材料; （2）Na2O，用于防止由陶瓷材料制成的压敏电阻，并提高其非线性系数; 和（3）Al2O3，用于改善压敏电阻的压敏电阻电压的温度依赖性以及非线性系数。 任选地，对于更高的非线性系数，陶瓷材料还可以含有一种或多种Ag 2 O，CuO，MnO 2和SiO 2。 相对于100摩尔份的SrTiO 3，含有0.01〜1.50摩尔份的Al 2 O 3的陶瓷组合物能够提供具有在例如-40℃以下的温度范围内难以变化的压敏电阻的压敏电阻 至+120℃
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公开(公告)号：US4545929A
公开(公告)日：1985-10-08
申请号：US398193
申请日：1982-07-14
摘要： Ceramic materials suitable for use in varistors, consisting essentially of a major proportion of SrTiO.sub.3, the balance being (1) at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11, Eu.sub.2 O.sub.3, and Dy.sub.2 O.sub.3, for making the materials semiconductive, and (2) Na.sub.2 O, for making surge-proof the varistors made from the ceramic materials. As desired, the compositions may further include one or more of Ag.sub.2 O, CuO, MnO.sub.2, and SiO.sub.2 for a higher nonlinearity coefficient. Containing Na.sub.2 O in proportions ranging from approximately 0.02 to 2.50 mole parts, the ceramic compositions make possible the provision of varistors suffering little from current or voltage surges in use.
摘要翻译： 适用于压敏电阻的陶瓷材料，主要由SrTiO3组成，其余为（1）Nb2O5，Ta2O5，WO3，La2O3，CeO2，Nd2O3，Y2O3，Sm2O3，Pr6O11，Eu2O3和Dy2O3中的至少一种， 用于制造材料半导体，以及（2）Na2O，用于制造由陶瓷材料制成的压敏电阻的防浪涌。 根据需要，组合物可以进一步包括Ag 2 O，CuO，MnO 2和SiO 2中的一种或多种，用于较高的非线性系数。 含有大约0.02至2.50摩尔份数的Na 2 O，陶瓷组合物可以提供在使用中几乎不受电流或电压浪涌影响的压敏电阻。
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公开(公告)号：US4490318A
公开(公告)日：1984-12-25
申请号：US562429
申请日：1983-12-16
摘要： Semiconductive ceramic materials suitable for use in varistors, consisting essentially of a major proportion of Sr(.sub.1-x)Ca.sub.x TiO.sub.3, where x is from about 0.01 to about 0.50, the balance being at least one of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, WO.sub.3, La.sub.2 O.sub.3, CeO.sub.2, Nd.sub.2 O.sub.3, Y.sub.2 O.sub.3, Sm.sub.2 O.sub.3, Pr.sub.6 O.sub.11 and Dy.sub.2 O.sub.3, and Na.sub.2 O. The ceramic materials may further comprise a minor proportion of at least one of Ag.sub.2 O, CuO, MnO.sub.2 and SiO.sub.2, and/or a minor proportion of Al.sub.2 O.sub.3. For the fabrication of ceramic bodies of the above compositions there are prepared mixtures of the noted ingredients in powdered form in various possible combinations, plus an organic binder. The mixtures are molded under pressure into desired shape. The moldings are first fired in a reductive or neutral atmosphere and then refired in an oxidative atmosphere. Na.sub.2 O can be included in the initial mixtures in the form of Na.sub.2 O itself and/or other Na compound such as NaF. Alternatively, either Na.sub.2 O itself or NaF is pasted and coated on the moldings after the initial firing thereof. The subsequent refiring of the coated moldings causes thermal diffusion of Na.sub.2 O therein.
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公开(公告)号：US5025415A
公开(公告)日：1991-06-18
申请号：US412077
申请日：1989-09-25
申请人： Masaru Masuyama , Yoshihiro Takemae , Tetsuhiko Endoh , Hirosuke Komyoji , Ryuji Tanaka , Katsuhiko Itakura
发明人： Masaru Masuyama , Yoshihiro Takemae , Tetsuhiko Endoh , Hirosuke Komyoji , Ryuji Tanaka , Katsuhiko Itakura
CPC分类号： G06K19/07 , G06K7/0008
摘要： A memory card is used on a card write and/or read apparatus which has a data bus with an arbitrary bit width and writes and/or reads a datum to and/or from the memory card. The memory card comprises a data input/output terminal, a memory part having a data bus with a bit width of at least n bits for coupling to the data bus of the card write and/or read apparatus via the data input/output terminal, an address input terminal for receiving an address signal, a first input terminal for receiving a first chip select signal which selects a first byte, a second input terminal for receiving a second chip select signal which selects a second byte, and a decoder circuit for determining a bit width of the data bus of the memory part to be used for data communication between the card write and/or read apparatus to one of n bits and n/N bits based on the first and second chip select signals and one or a plurality of arbitrary bits of the address signal by supplying control signals to the memory part, where n, N and n/N are positive integers.
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