Abstract:
A transmitter includes a dual mode modulator and an amplifier coupled to the dual mode modulator. The dual mode modulator implements a linear modulation scheme during a first mode of the modulator to produce a variable envelope modulated signal. The dual mode modulator implements a non-linear modulation scheme during a second mode of the modulator to produce a constant envelope modulated signal. The amplifier is biased as a linear amplifier during the first mode of the modulator and is biased as a non-linear amplifier during the second mode of the modulator. A feed-forward connection between the dual mode modulator and the amplifier is used to indicate a change in modulation mode and to adjust the bias of the amplifier. A power of the constant envelope modulated signal is increased such that an operating point of the amplifier remains substantially constant during the first and second modes of the modulator.
Abstract:
A transmitter includes a dual mode modulator and an amplifier coupled to the dual mode modulator. The dual mode modulator implements a linear modulation scheme during a first mode of the modulator to produce a variable envelope modulated signal. The dual mode modulator implements a non-linear modulation scheme during a second mode of the modulator to produce a constant envelope modulated signal. The amplifier is biased as a linear amplifier during the first mode of the modulator and is biased as a non-linear amplifier during the second mode of the modulator. A feed-forward connection between the dual mode modulator and the amplifier is used to indicate a change in modulation mode and to adjust the bias of the amplifier. A power of the constant envelope modulated signal is increased such that an operating point of the amplifier remains substantially constant during the first and second modes of the modulator.
Abstract:
The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.
Abstract:
An apparatus having an electronic amplifier with signal gain dependent bias. The electronic apparatus includes the amplifier and a bias state control circuit. The electronic amplifier has a signal gain and a bias state. The signal gain is adjustable to either of at least two different signal gain settings, and the bias state is adjustable to either of at least two different bias state settings. The bias state control circuit has capability of adjusting the bias state setting of the amplifier based upon the signal gain setting to which the amplifier is adjusted.
Abstract:
An object of the invention is to provide a transmitter high in efficiency, good in linearity and capable of covering an output level in a wide range. Either linear operating mode or saturation operating mode is set as the operating mode of a high-frequency power amplifier (15) on the basis of an operating mode set signal (107). The gain of a variable gain amplifier (14) provided in front of the high-frequency power amplifier (15) and values of output voltage (109) and bias current supplied from a supply voltage/bias current control circuit (17) to the high-frequency power amplifier (15) are switched. The gain of the variable gain amplifier (14) in the saturation operating mode is formed so as to be higher by a predetermined value than that in the linear operating mode. Accordingly, the high-frequency power amplifier 15 operates in the designated operating mode, so that the output transmission power range can be widened.
Abstract:
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
Abstract:
A dynamically varying linearity system “DVLS” capable of varying the linearity of a radio frequency (RF) front-end of a communication device responsive to receiving a condition signal indicating a desired mode of operation of a transmitter. The DVLS may include a condition signal indicative of the desired mode of operation and a controller that adjusts the linearity of the transmitter responsive to the condition signal. The condition signal may be responsive to a user interface. The controller, responsive to the condition signal, may dynamically adjust the operating current of the transmitter.
Abstract:
The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.
Abstract:
A signal amplifier device is provided to ensure the continuity of the gain of an amplifier. The signal amplifier device includes a main path and a sub path connected in parallel to the main path. A main path first amplifier circuit amplifies an input signal on the main path. A main path second amplifier circuit includes a common-gate transistor connected in series with an output of the main path first amplifier circuit without sharing a DC current. On the main sub path, the sub path amplifier circuit amplifies the input signal by using a gain lower than the maximum gain in the main path.
Abstract:
The present disclosure relates to a power amplifier (PA) system provided in a semiconductor device and having feed forward gain control. The PA system comprises a transmit path and control circuitry. The transmit path is configured to amplify an input radio frequency (RF) signal and comprises a first tank circuit and a PA stage. The control circuitry is configured to detect a power level associated with the input RF signal and control a first bias signal provided to the PA stage based on a first function of the power level and control a quality factor (Q) of the first tank circuit based on a second function of the power level.