公开(公告)号：US09127360B2

公开(公告)日：2015-09-08

申请号：US12887647

申请日：2010-09-22

Applicant: Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

Inventor： Balasubramanian Ramachandran ,  Errol Antonio C. Sanchez ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Harpreet Singh Juneja ,  Zuoming Zhu

IPC: C30B25/14 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/455 ,  C23C16/45523 ,  C30B25/14 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，用于处理衬底的设备包括处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在衬底的处理表面上提供第一工艺气体; 第二入口端口，用于在不同于第一方向的第二方向上在衬底的处理表面上提供第二工艺气体，其中在第一方向和第二方向之间相对于衬底支撑件的中心轴线测量的方位角 高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。

公开(公告)号：US08772055B1

公开(公告)日：2014-07-08

申请号：US13796169

申请日：2013-03-12

Applicant: Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

Inventor： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC: H01L21/00 ,  B05C11/00 ,  H05B6/66

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract translation: 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US20090081884A1

公开(公告)日：2009-03-26

申请号：US11860161

申请日：2007-09-24

Applicant: YOSHITAKA YOKOTA ,  Norman Tam ,  Balasubramanian Ramachandran ,  Martin John Ripley

Inventor： YOSHITAKA YOKOTA ,  Norman Tam ,  Balasubramanian Ramachandran ,  Martin John Ripley

IPC: H01L21/316

CPC classification number: H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract translation: 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。

公开(公告)号：US20080115808A1

公开(公告)日：2008-05-22

申请号：US11561868

申请日：2006-11-20

Applicant: Balasubramanian Ramachandran ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph Michael Ranish

Inventor： Balasubramanian Ramachandran ,  Tae Jung Kim ,  Jung Hoon Sun ,  Joung Woo Lee ,  Hwa Joong Lim ,  Sang Phil Lee ,  Joseph Michael Ranish

IPC: B08B7/04

CPC classification number: B08B5/00 ,  B08B7/00 ,  B08B7/0071 ,  H01L21/324

Abstract: A method of cleaning a chamber used for annealing doped wafer substrates. In one embodiment the method provides removing dopants deposited in an annealing chamber after an annealing process of a doped substrate by flowing one or more volatilizing gases into the annealing chamber, applying heat to volatilize the deposited dopants in the annealing chamber, and exhausting the chamber to remove volatilized dopants from the annealing chamber.

Abstract translation: 一种清洗用于退火掺杂晶圆基板的室的方法。 在一个实施方案中，该方法提供了在通过使一种或多种挥发气体进入退火室中的掺杂衬底的退火处理之后去除在退火室中沉积的掺杂剂，施加热量以挥发退火室中沉积的掺杂剂，并将该室排出 从退火室中除去挥发的掺杂剂。

公开(公告)号：US07127367B2

公开(公告)日：2006-10-24

申请号：US10950145

申请日：2004-09-24

Applicant: Balasubramanian Ramachandran ,  Joseph Michael Ranish ,  Ravi Jallepally ,  Sundar Ramamurthy ,  Raman Achutharaman ,  Brian Haas ,  Aaron Hunter

Inventor： Balasubramanian Ramachandran ,  Joseph Michael Ranish ,  Ravi Jallepally ,  Sundar Ramamurthy ,  Raman Achutharaman ,  Brian Haas ,  Aaron Hunter

IPC: G01K5/00 ,  G01K7/00 ,  G01K11/00

CPC classification number: H01L21/67103

Abstract: Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.

Abstract translation: 用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

公开(公告)号：US20060086713A1

公开(公告)日：2006-04-27

申请号：US10974003

申请日：2004-10-26

Applicant: Aaron Hunter ,  Rajesh Ramanujam ,  Balasubramanian Ramachandran ,  Cornia Tanasa ,  Tarpan Dixit

Inventor： Aaron Hunter ,  Rajesh Ramanujam ,  Balasubramanian Ramachandran ,  Cornia Tanasa ,  Tarpan Dixit

IPC: A21B1/00 ,  A21B1/22 ,  F27D11/00

CPC classification number: F27B17/0025 ,  F27B5/04 ,  F27D21/0014 ,  H01L21/67115 ,  H01L21/67248 ,  H05B3/68

Abstract: A rapid thermal processing (RTP) system including a transmission pyrometer monitoring the temperature dependent absorption of the silicon wafer for radiation from the RTP lamps at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500° C. or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure with a beam splitter dividing radiation from the wafer.

公开(公告)号：US06888104B1

公开(公告)日：2005-05-03

申请号：US10773650

申请日：2004-02-05

Applicant: Joseph M. Ranish ,  Aaron Muir Hunter ,  Balasubramanian Ramachandran ,  Jallepally Ravi ,  Sundar Ramamurthy ,  Vedapuram S. Achutharaman ,  Khurshed Sorabji

Inventor： Joseph M. Ranish ,  Aaron Muir Hunter ,  Balasubramanian Ramachandran ,  Jallepally Ravi ,  Sundar Ramamurthy ,  Vedapuram S. Achutharaman ,  Khurshed Sorabji

IPC: F27B5/14 ,  F27B17/00 ,  F27D5/00 ,  F27D19/00 ,  F27D21/00 ,  H01L21/687

CPC classification number: H01L21/68735 ,  F27B17/0025 ,  F27D5/0037 ,  F27D19/00 ,  F27D21/00 ,  H01L21/68757

Abstract: A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10−5 m2K/J to about 9×10−4 m2K/J.

Abstract translation: 衬底支撑环具有带子，该带具有至少部分地围绕衬底周边的内周边。 带具有辐射吸收表面。 唇缘从带的内周向径向向内延伸以支撑基底。 带和唇缘可以由碳化硅形成，并且辐射吸收表面可以是碳化硅的氧化层。 在一个版本中，带和唇具有组合的热质量T m，并且辐射吸收表面具有吸收率A和表面积S SUB，使得比率 （AxS a）/ T m是约4×10 -5 / 2K / J至约9×10 9 / SUP> -4 / 2K / J。

公开(公告)号：US06674999B2

公开(公告)日：2004-01-06

申请号：US09811082

申请日：2001-03-16

Applicant: Balasubramanian Ramachandran

Inventor： Balasubramanian Ramachandran

IPC: H04Q720

CPC classification number: H04W52/267 ,  H03G3/004 ,  H03G3/3042 ,  H03G2201/103 ,  H03G2201/307 ,  H03G2201/40 ,  H03G2201/508 ,  H04B1/109 ,  H04L1/0001 ,  H04W52/08 ,  H04W52/38

Abstract: A dynamically varying linearity system “DVLS” capable of varying the linearity of a radio frequency (RF) front-end of a communication device responsive to receiving a condition signal indicating a desired mode of operation of a transmitter. The DVLS may include a condition signal indicative of the desired mode of operation and a controller that adjusts the linearity of the transmitter responsive to the condition signal. The condition signal may be responsive to a user interface. The controller, responsive to the condition signal, may dynamically adjust the operating current of the transmitter.

Abstract translation: 一种动态变化的线性系统“DVLS”，其能够响应于接收到指示发射机的所需操作模式的条件信号而改变通信设备的射频（RF）前端的线性度。 DVLS可以包括指示期望的操作模式的条件信号和响应于条件信号来调整发射机的线性度的控制器。 条件信号可以响应于用户界面。 控制器响应于条件信号，可以动态地调整发射机的工作电流。

公开(公告)号：US08953716B1

公开(公告)日：2015-02-10

申请号：US13611731

申请日：2012-09-12

Applicant: GuruGuha Venkatasubramanian ,  Balasubramanian Ramachandran

Inventor： GuruGuha Venkatasubramanian ,  Balasubramanian Ramachandran

IPC: H03K9/00

CPC classification number: H04L25/061

Abstract: Systems, methods, and other embodiments associated with a DC notch gear filter are described. According to one embodiment, an apparatus includes a digital high pass filter having a cutoff frequency and a gear mechanism configured to successively change the cutoff frequency of the high pass filter based on a sequence of cutoff frequencies. The apparatus also includes a direct current (DC) estimator configured to estimate a DC offset of a digital input signal to the high pass filter based, at least in part, on an output signal of the high pass filter as a cutoff frequency is successively changed. A direct current (DC) compensator is configured to subtract the estimated DC offset from the input signal to the high pass filter.

Abstract translation: 描述了与直流凹口齿轮过滤器相关联的系统，方法和其它实施例。 根据一个实施例，一种装置包括具有截止频率和齿轮机构的数字高通滤波器，其被配置为基于截止频率序列连续改变高通滤波器的截止频率。 该装置还包括直流（DC）估计器，其被配置为至少部分地基于高通滤波器的输出信号来估计数字输入信号对高通滤波器的DC偏移，因为截止频率被连续地改变 。 直流（DC）补偿器被配置为从估计的直流偏移从输入信号减去高通滤波器。

公开(公告)号：US08217574B2

公开(公告)日：2012-07-10

申请号：US12753532

申请日：2010-04-02

Applicant: Balasubramanian Ramachandran ,  Nyi Oo Myo ,  Joseph M. Ranish ,  Akio Takahashi

Inventor： Balasubramanian Ramachandran ,  Nyi Oo Myo ,  Joseph M. Ranish ,  Akio Takahashi

IPC: H01K1/66 ,  H01K1/62

CPC classification number: H01K1/66

Abstract: Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.

Abstract translation: 本文提供具有内部熔丝系统的灯的实施例。 在一些实施例中，灯可以包括透明外壳; 布置在所述壳体中的细丝，所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒，其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体，其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接，其中第一拦截棒被定位成使得当主体 的灯丝接触第一拦截棒。