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公开(公告)号：US20090255575A1
公开(公告)日：2009-10-15
申请号：US12417569
申请日：2009-04-02
申请人： Michael Tischler
发明人： Michael Tischler
IPC分类号： H01L31/00
CPC分类号： H01L31/03042 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0687 , Y02E10/544
摘要： Lightweight solar cells include a multiple-bandgap material.
摘要翻译： 轻质太阳能电池包括多带隙材料。
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公开(公告)号：US12034095B2
公开(公告)日：2024-07-09
申请号：US17889961
申请日：2022-08-17
IPC分类号： H01L31/0304 , H01L31/0232 , H01L31/0328 , H01L31/109 , H01S5/02 , H01S5/024 , H01S5/026 , H01S5/10 , H01S5/32
CPC分类号： H01L31/0304 , H01L31/02327 , H01L31/0328 , H01L31/109 , H01S5/02461 , H01S5/3211 , H01S5/3213 , H01S5/021 , H01S5/026 , H01S5/1032 , Y02E10/544
摘要： Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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公开(公告)号：US20240088320A1
公开(公告)日：2024-03-14
申请号：US18274537
申请日：2022-01-13
发明人： Hyung Tak SEO , Mohit KUMAR
IPC分类号： H01L31/109 , H01L31/028 , H01L31/032 , H01L31/0328
CPC分类号： H01L31/109 , H01L31/028 , H01L31/032 , H01L31/0328
摘要： A bio-sensing device having a photoelectric element is disclosed. The bio-sensing device includes an infrared pulse generator configured to irradiate infrared pulsed light to a target; the photoelectric element configured to receive the infrared pulsed light which has transmitted through the target, and to generate photocurrent based on the received light; and a sensing element configured to measure a magnitude of either a first peak current of the photocurrent corresponding to a leading edge of the infrared pulsed light or a second peak current of the photocurrent corresponding to a trailing edge of the infrared pulsed light, and to analyze the target based on the measurement result.
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公开(公告)号：US20180290130A1
公开(公告)日：2018-10-11
申请号：US16006939
申请日：2018-06-13
申请人： FUJITSU LIMITED
发明人： Toshihisa Anazawa , Yoshihiko Imanaka , Toshio MANABE , Hideyuki AMADA , Sachio IDO , Fumiaki KUMASAKA , Naoki AWAJI
IPC分类号： B01J27/24 , H01L31/0328 , B01J35/00 , B01J37/02 , H01L31/18
CPC分类号： B01J27/24 , B01J35/0033 , B01J35/004 , B01J37/0238 , H01L31/0296 , H01L31/03044 , H01L31/032 , H01L31/0328 , H01L31/1828 , H01L31/1856
摘要： A photoexcitation material includes: a wurtzite type solid solution crystal containing t gallium, zinc, nitrogen and oxygen, wherein a peak (A) of an existence ratio of nitrogen or oxygen which is a first adjacent atom of the gallium or zinc and a peak (B) of an existence ratio of gallium or zinc which is a second adjacent atom of the gallium or zinc satisfy a relational expression of A>B in a relationship between a distance and the existence ratio of the adjacent atom of the gallium or zinc, the relationship being obtained from an extended X-ray absorption fine structure analysis.
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公开(公告)号：US20180254363A1
公开(公告)日：2018-09-06
申请号：US15755941
申请日：2016-08-31
发明人： Zhisheng Shi
IPC分类号： H01L31/0328 , H01L31/0352 , H01L31/0384
CPC分类号： H01L31/0328 , H01L31/035218 , H01L31/03845
摘要： A structure having a bulk crystalline matrix material and a plurality of nanoscale crystallites embedded within the bulk crystalline matrix material. The bulk crystalline matrix material and the nanoscale crystallites comprise a semiconductor material having the same chemical composition. The nanoscale crystallites are spatially distributed throughout substantially the entire bulk crystalline matrix material.
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公开(公告)号：US20180219112A1
公开(公告)日：2018-08-02
申请号：US15927277
申请日：2018-03-21
IPC分类号： H01L31/0304 , H01L31/0232
CPC分类号： H01L31/0304 , H01L31/02327 , H01L31/0328 , H01L31/109 , H01S5/021 , H01S5/02461 , H01S5/026 , H01S5/1032 , H01S5/3211 , H01S5/3213 , Y02E10/544
摘要： Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
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公开(公告)号：US20180198015A1
公开(公告)日：2018-07-12
申请号：US15741783
申请日：2016-07-06
发明人： Qinglin He , Ying Hoi Lai , Yi Liu , Iam Keong Sou
IPC分类号： H01L31/108 , H01L31/0336 , H01L31/0224 , H01L31/18 , H01L21/66
CPC分类号： H01L31/108 , H01L21/02395 , H01L21/02568 , H01L21/0259 , H01L21/02631 , H01L22/26 , H01L29/122 , H01L29/22 , H01L29/267 , H01L31/00 , H01L31/022408 , H01L31/022491 , H01L31/0304 , H01L31/032 , H01L31/0328 , H01L31/0336 , H01L31/036 , H01L31/18
摘要： A diode, UV radiation detector, and method of manufacturing semiconductor device that includes a diode with a substrate having a first side and a second side. The diode includes an active layer having a rocksalt phase crystalline structure of CaS disposed on the first side of the substrate, and an electrical contact disposed on the second side of the substrate. The diode also includes a semi-transparent conducting layer disposed on the active layer. The UV radiation detector includes the diode and circuitry connecting the semi-transparent conducting layer and the electrical contact. The UV radiation detector may detect radiation having a wavelength between 220 and 280 nm. The substrate may have a lattice mismatch between 0.47% and 12.6% with respect to the active layer.
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28.发明授权公开(公告)号：US10009564B2
公开(公告)日：2018-06-26
申请号：US15035300
申请日：2014-11-17
申请人： SONY CORPORATION
IPC分类号： H04N5/3745 , H01L27/146 , H01L31/0224 , H01L31/032 , H01L31/0328 , H04N5/374
CPC分类号： H04N5/3745 , H01L27/14623 , H01L27/14625 , H01L27/1463 , H01L27/1464 , H01L31/022466 , H01L31/0322 , H01L31/0328 , H04N5/374
摘要： The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.
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公开(公告)号：US09865767B2
公开(公告)日：2018-01-09
申请号：US14991926
申请日：2016-01-09
发明人： William Johnstone Ray , Mark D. Lowenthal , Neil O. Shotton , Richard A. Blanchard , Mark Allan Lewandowski , Kirk A. Fuller , Donald Odell Frazier
IPC分类号： H01L33/00 , H01L21/30 , B82Y20/00 , B82Y30/00 , H01L27/32 , H01L51/00 , H01L51/44 , H01L51/52 , H01L51/56 , H01L31/0232 , H01L33/08 , H01L31/0352 , H01L33/20 , H01L31/05 , H01L31/054 , H01L31/068 , H01L31/0475 , H01L27/142 , H01L27/15 , H01L31/028 , H01L31/0304 , H01L31/0328 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62
CPC分类号： H01L33/00 , B82Y20/00 , B82Y30/00 , H01L21/30 , H01L27/142 , H01L27/156 , H01L27/32 , H01L27/3281 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/0328 , H01L31/0352 , H01L31/035281 , H01L31/0475 , H01L31/05 , H01L31/0504 , H01L31/0508 , H01L31/0512 , H01L31/0543 , H01L31/0547 , H01L31/068 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/0096 , H01L51/447 , H01L51/52 , H01L51/5203 , H01L51/5265 , H01L51/5271 , H01L51/5275 , H01L51/56 , H01L2251/5369 , H01L2924/0002 , Y02E10/52 , Y02E10/547 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.
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公开(公告)号：US09748425B2
公开(公告)日：2017-08-29
申请号：US14184054
申请日：2014-02-19
发明人： Yasuaki Hamada , Satoshi Kimura , Setsuya Iwashita , Akio Konishi
IPC分类号： H01L31/0264 , H01L31/072 , H01L31/0328
CPC分类号： H01L31/072 , H01L31/0328 , Y02E10/50
摘要： A photoelectric conversion element includes a PN junction formed from an N-type oxide layer and a P-type oxide layer. The P-type oxide layer is formed from an oxide having a perovskite structure.
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