公开(公告)号：US20120048723A1

公开(公告)日：2012-03-01

申请号：US12862104

申请日：2010-08-24

Applicant: Craig R. Chaney

Inventor： Craig R. Chaney

IPC: C23C14/46 ,  C23C14/34

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/024 ,  H01J2237/081 ,  H01J2237/0827

Abstract: An apparatus includes an arc chamber housing defining an arc chamber, and a feed system configured to feed a sputter target into the arc chamber. A method includes feeding a sputter target into an arc chamber defined by an arc chamber housing, and ionizing a portion of the sputter target.

Abstract translation: 一种装置包括限定电弧室的电弧室壳体，以及配置成将溅射靶材馈入电弧室的馈电系统。 一种方法包括将溅射靶馈送到由电弧室壳体限定的电弧室中，并将溅射靶的一部分电离。

公开(公告)号：US08124932B2

公开(公告)日：2012-02-28

申请号：US12310149

申请日：2007-08-03

Applicant: Takashi Ogawa ,  Yo Yamamoto ,  Hiroshi Matsumura

Inventor： Takashi Ogawa ,  Yo Yamamoto ,  Hiroshi Matsumura

IPC: G01N23/00

CPC classification number: H01J37/09 ,  H01J37/15 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/024 ,  H01J2237/0458

Abstract: A charged particle beam apparatus includes a charged particle source, an aperture, an object lens, an observing unit, an aperture driving portion, and a control portion. The control portion includes a spot pattern forming portion that forms a plurality of spot patterns on a surface of a sample by irradiating a charged particle beam, an analyzing portion that calculates a position of a spot center of the spot pattern and a geometrical center position of a halo, and an adjusting position determining portion that calculates an adjusting position based on a position of intersecting lines connecting the positions of the spot centers of the respective spot patterns and the center position of the halo. In this manner, the position of the aperture can be easily and accurately adjusted in a short period of time by moving the center axis of the aperture to the adjusting position.

Abstract translation: 带电粒子束装置包括带电粒子源，孔径，物镜，观察单元，孔径驱动部分和控制部分。 控制部分包括通过照射带电粒子束在样品的表面上形成多个斑点图案的斑点图形形成部分，计算斑点图案的斑点中心的位置和几何中心位置的分析部分 光圈和调整位置确定部分，其基于连接各个光点图案的光点中心的位置和光晕的中心位置的交叉线的位置来计算调整位置。 以这种方式，通过将孔的中心轴线移动到调节位置，可以在短时间内容易且精确地调节孔径的位置。

公开(公告)号：US20110297827A1

公开(公告)日：2011-12-08

申请号：US13202554

申请日：2009-10-23

Applicant: Suyo Asai ,  Tsuyoshi Onishi ,  Toshihide Agemura

Inventor： Suyo Asai ,  Tsuyoshi Onishi ,  Toshihide Agemura

IPC: G01N23/00 ,  H01J37/20

CPC classification number: H01J37/244 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/024 ,  H01J2237/24455 ,  H01J2237/24475

Abstract: An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam.The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.

Abstract translation: 本发明的目的是在样品平面相对于带电粒子束倾斜的情况下，在最佳位置检测检测信号。 本发明涉及一种用于将带电粒子束照射到样品的带电粒子束装置，其中检测器移动到样品周围的多个期望位置，以便优化检测器的位置。 根据本发明，由于可以根据样品的姿态和形状获得最佳检测信号，所以可以进行高精度的样本观察，例如SEM观察，STEM观察和FIB观察 可以进行 此外，在FIB-SEM装置中，可以高精度地检测FIB处理的终点。

公开(公告)号：US20110220812A1

公开(公告)日：2011-09-15

申请号：US12720933

申请日：2010-03-10

Applicant: Craig R. CHANEY ,  Alexander S. PEREL ,  Leo V. KLOS

Inventor： Craig R. CHANEY ,  Alexander S. PEREL ,  Leo V. KLOS

IPC: H01J27/08 ,  H01J99/00

CPC classification number: H01J27/08 ,  B08B1/008 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/024

Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

Abstract translation: 离子源包括限定具有提取孔的电弧室的电弧室壳体，以及擦拭器组件，其包括在处于停放位置的位于电弧室外部的擦拭器，并且构造成从停放位置驱动到操作位置以清洁提取孔 。 用于离子源的擦拭器组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室外部并且从停放位置驱动到操作位置以清洁离子源的提取孔。

公开(公告)号：US20110220144A1

公开(公告)日：2011-09-15

申请号：US12720960

申请日：2010-03-10

Applicant: Craig R. CHANEY ,  Alexander S. Perel ,  Neil J. Bassom ,  Leo V. Klos

Inventor： Craig R. CHANEY ,  Alexander S. Perel ,  Neil J. Bassom ,  Leo V. Klos

IPC: H01J27/08 ,  H01J99/00 ,  B08B7/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/024

Abstract: An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source.

Abstract translation: 离子源包括限定具有提取孔的电弧室的电弧室壳体和擦拭器。 擦拭器位于电弧室内处于停放位置，并且构造成从停放位置驱动到操作位置以清洁提取孔。 用于离子源的清洁子组件包括擦拭器，其构造成当处于停放位置时定位在离子源的电弧室内并且从停放位置驱动到操作位置以清洁离子源的提取孔。

公开(公告)号：US20110089342A1

公开(公告)日：2011-04-21

申请号：US12756020

申请日：2010-04-07

Applicant: Kevin M. Daniels ,  Russell J. Low ,  Benjamin B. Riordon

Inventor： Kevin M. Daniels ,  Russell J. Low ,  Benjamin B. Riordon

IPC: G21K5/10 ,  B32B3/30

CPC classification number: H01L21/266 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/045 ,  H01J2237/31711 ,  H01L31/18 ,  Y10T428/2457

Abstract: Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.

Abstract translation: 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括第一基底; 以及彼此间隔开的多个手指以限定一个或多个间隙。

公开(公告)号：US20100327156A1

公开(公告)日：2010-12-30

申请号：US12492159

申请日：2009-06-26

Applicant: Douglas J. King

Inventor： Douglas J. King

IPC: H01J49/26

CPC classification number: H01J49/24 ,  H01J2237/024 ,  H01J2237/057 ,  H01J2237/16

Abstract: A mass spectrometry system includes an ion-optics and a housing for the ion-optics. A panel is movable between an open and closed position relative to the housing. A first section of the ion-optics is within the housing, while a second section of the ion-optics is mounted to the panel. The ion-optics is surrounded by the housing and the panel when the panel is in the closed position. An alignment mechanism aligns the first and second sections of the ion-optics into a pre-determined alignment upon closing the panel.

Abstract translation: 质谱系统包括离子光学器件和用于离子光学器件的壳体。 面板可在相对于壳体的打开和关闭位置之间移动。 离子光学器件的第一部分在壳体内，而离子光学器件的第二部分安装到面板上。 当面板处于关闭位置时，离子光学器件被壳体和面板包围。 在关闭面板时，对准机构将离子光学器件的第一和第二部分对准为预定的对准。

公开(公告)号：US20100320395A1

公开(公告)日：2010-12-23

申请号：US12776636

申请日：2010-05-10

Applicant: Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

Inventor： Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

IPC: H01J27/20 ,  H01J27/08

CPC classification number: H01J37/08 ,  H01J27/205 ,  H01J2237/024 ,  H01J2237/082 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。

公开(公告)号：US07838850B2

公开(公告)日：2010-11-23

申请号：US12059608

申请日：2008-03-31

Applicant: Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

Inventor： Sami K. Hahto ,  Richard Goldberg ,  Edward McIntyre ,  Thomas N. Horsky

IPC: G21K5/10

CPC classification number: H01J37/08 ,  H01J27/205 ,  H01J2237/024 ,  H01J2237/082 ,  H01J2237/0835 ,  H01J2237/31701

Abstract: An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber.

Abstract translation: 公开了用于半导体制造的离子源。 离子源包括电子发射器，其包括安装在用于制造半导体的电离室外部的阴极。 根据本发明的重要方面，使用电子发射器而没有相应的阳极或电子光学器件。 因此，可以缩短阴极和电离室之间的距离，使得离子源能够以电弧放电模式操作或产生等离子体。 或者，离子源可以通过选择性地改变阴极和电离室之间的距离，以单电子发射器在双重模式下操作。

公开(公告)号：US07750320B2

公开(公告)日：2010-07-06

申请号：US11644623

申请日：2006-12-22

Applicant: Joseph Ferrara ,  Bo H. Vanderberg ,  Michael A. Graf

Inventor： Joseph Ferrara ,  Bo H. Vanderberg ,  Michael A. Graf

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/09 ,  H01J2237/022 ,  H01J2237/024 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/24528 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31705

Abstract: A workpiece or semiconductor wafer is tilted as a ribbon beam is swept up and/or down the workpiece. In so doing, the implant angle or the angle of the ion beam relative to the workpiece remains substantially constant across the wafer. This allows devices to be formed substantially consistently on the wafer. Resolving plates move with the beam as the beam is scanned up and/or down. This allows desired ions to impinge on the wafer, but blocks undesirable contaminants.

Abstract translation: 当工件或半导体晶片沿着工件扫过和/或向下时，工件或半导体晶片被倾斜。 在这样做时，植入角度或离子束相对于工件的角度在晶片上保持基本恒定。 这允许在晶片上基本上一致地形成器件。 当光束向上扫描和/或向下扫描时，解析板随着光束移动。 这允许所需的离子撞击在晶片上，但阻止不期望的污染物。