公开(公告)号：US07916434B2

公开(公告)日：2011-03-29

申请号：US11387876

申请日：2006-03-24

Applicant: Shunji Saruki ,  Kenji Inage ,  Tetsuya Kuwashima ,  Hiroshi Kiyono ,  Katsumichi Tagami ,  Kazumasa Fukuda ,  Masahide Kohno

Inventor： Shunji Saruki ,  Kenji Inage ,  Tetsuya Kuwashima ,  Hiroshi Kiyono ,  Katsumichi Tagami ,  Kazumasa Fukuda ,  Masahide Kohno

IPC: G11B5/33

CPC classification number: G11B5/455 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

Abstract: A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0

Abstract translation: 提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。 电荷位置密度n和由于电荷位点捕获的电子的迁移率μ满足由下式表示的关系：0 <（ns1-1-ns2-1）-1·（μ0-μ）·（nμ）-1 <0.2，其中ns1和ns2是在读取信号期间元件电阻分别为最小值和最大值时隧道电子的密度，μ0是未被捕获时电子的迁移率。

公开(公告)号：US20100032738A1

公开(公告)日：2010-02-11

申请号：US12248237

申请日：2008-10-09

Applicant: Jianxin Zhu

Inventor： Jianxin Zhu

IPC: H01L29/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0004 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/303 ,  H01L43/08

Abstract: A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.

Abstract translation: 具有自由层和具有垂直各向异性的第一被钉扎层的磁性隧道结电池，所述电池包括在所述自由层和第二被钉扎层之间的耦合层，所述耦合层包括可从反铁磁状态切换到铁磁态的相变材料 。 在一些实施例中，靠近耦合层的至少一个致动器电极将应变从电极传递到耦合层，以将耦合层从反铁磁状态切换到铁磁状态。 还描述了存储器件和方法。

公开(公告)号：US20090161266A1

公开(公告)日：2009-06-25

申请号：US12321901

申请日：2009-01-27

Applicant: Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

Inventor： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC: G11B5/33 ,  G11B5/127

CPC classification number: H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

Abstract: A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

Abstract translation: 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 结果，Hin值可以减少1/3至约32Oe。 对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

公开(公告)号：US20080068763A1

公开(公告)日：2008-03-20

申请号：US11928342

申请日：2007-10-30

Applicant: Akifumi Aono

Inventor： Akifumi Aono

IPC: G11B5/127 ,  G11B5/33

CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/012 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/303 ,  H01L43/08

Abstract: A magnetic disk apparatus having a highly sensitive reproducing head and a method for manufacturing the magnetic disk apparatus are disclosed. A spin-valve-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer and a free magnetic layer is used as a magnetoresistive-effect device for the reproducing head. An antiferromagnetic reaction layer is formed between the antiferromagnetic reaction layer and the ferromagnetic layer. The antiferromagnetic reaction layer is formed of a metallic compound containing oxygen.

Abstract translation: 公开了一种具有高灵敏度的再现头的磁盘装置及其制造方法。 使用由反铁磁层，铁磁层，非磁性层和自由磁性层构成的自旋阀型多层膜作为再生磁头的磁阻效应元件。 在反铁磁反应层和铁磁层之间形成反铁磁性反应层。 反铁磁反应层由含氧的金属化合物形成。

公开(公告)号：US07098495B2

公开(公告)日：2006-08-29

申请号：US10899610

申请日：2004-07-26

Applicant: JiJun Sun ,  Renu W. Dave ,  Jon M. Slaughter ,  Johan Akerman

Inventor： JiJun Sun ,  Renu W. Dave ,  Jon M. Slaughter ,  Johan Akerman

IPC: H01L29/76

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12

Abstract: Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer.Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

公开(公告)号：US20060180839A1

公开(公告)日：2006-08-17

申请号：US11354144

申请日：2006-02-15

Applicant: Yoshiyuki Fukumoto ,  Chuuji Igarashi

Inventor： Yoshiyuki Fukumoto ,  Chuuji Igarashi

IPC: H01L29/94

CPC classification number: H01L43/02 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11C11/16 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3281 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114

Abstract: A layered ferromagnetic structure is composed of a first ferromagnetic layer positioned over a substrate; a second ferromagnetic layer positioned over the first ferromagnetic layer; and a first non-magnetic layer placed between the first and second ferromagnetic layers. The top surface of the first ferromagnetic layer is in contact with the first non-magnetic layer. The first ferromagnetic layer includes a first orientation control buffer that exhibits an effect of enhancing crystalline orientation of a film formed thereon.

Abstract translation: 分层铁磁结构由位于基板上的第一铁磁层构成; 位于第一铁磁层上的第二铁磁层; 以及置于第一和第二铁磁层之间的第一非磁性层。 第一铁磁层的顶表面与第一非磁性层接触。 第一铁磁层包括表现出增强其上形成的膜的结晶取向的效果的第一取向控制缓冲液。

公开(公告)号：US20060110625A1

公开(公告)日：2006-05-25

申请号：US11266956

申请日：2005-10-26

Applicant: Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

Inventor： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC: G11B5/33

CPC classification number: H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

Abstract: A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

公开(公告)号：US07002194B2

公开(公告)日：2006-02-21

申请号：US10622350

申请日：2003-07-18

Applicant: Daniel Worledge

Inventor： Daniel Worledge

IPC: H01L29/76 ,  G11C11/00

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3231 ,  H01F10/3281 ,  H01F41/303 ,  H01L43/08

Abstract: A magnetic storage structure comprises a first magnetic layer; a second magnetic layer; and a nonmagnetic spacer layer disposed between the first and second layers for coupling the first and second layers to be parallel in a zero field condition. According to another embodiment of the invention a magnetic memory cell exhibits a hysteresis loop wherein in small fields the thin layer switches, reversibly, leaving the layers coupled anti parallel. At larger fields the thick layer switches making the layers parallel. According to yet another embodiment of the invention, a magnetic memory structure comprises two magnetic layers wherein the layers are magnetically coupled in a substantially parallel mode in zero field, and switches via the anti parallel state.

Abstract translation: 磁存储结构包括第一磁性层; 第二磁性层; 以及设置在第一和第二层之间的非磁性间隔层，用于在零场条件下将第一和第二层耦合为平行。 根据本发明的另一个实施例，磁存储器单元呈现滞后回路，其中在小场中，薄层可逆地切换，使得层反向并联耦合。 在较大的场地，厚层开关使层平行。 根据本发明的另一个实施例，磁存储器结构包括两个磁性层，其中层在零场中以基本上平行的模式磁耦合，并且经由反平行状态来切换。

公开(公告)号：US20060017081A1

公开(公告)日：2006-01-26

申请号：US10899610

申请日：2004-07-26

Applicant: JiJun Sun ,  Renu Dave ,  Jon Slaughter ,  Johan Akerman

Inventor： JiJun Sun ,  Renu Dave ,  Jon Slaughter ,  Johan Akerman

IPC: H01L29/94

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/132 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12

Abstract: Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.

Abstract translation: 提供磁隧道结（“MTJ”）元件结构和制造MTJ元件结构的方法。 MTJ元件结构可以包括结晶钉扎层，非晶固定层和设置在结晶钉扎层和非晶固定层之间的耦合层。 非晶固定层与结晶钉扎层反铁磁耦合。 MTJ元件还包括设置在非晶固定层和自由层之间的自由层和隧道势垒层。 另一MTJ元件结构可以包括被钉扎层，固定层和设置在它们之间的非磁性耦合层。 隧道势垒层设置在固定层和自由层之间。 界面层邻近隧道势垒层和非晶材料层设置。 第一界面层包括具有比无定形材料高的自旋极化的材料。

公开(公告)号：US20050174876A1

公开(公告)日：2005-08-11

申请号：US10514126

申请日：2003-05-13

Applicant: Yuukoh Katoh

Inventor： Yuukoh Katoh

IPC: H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C8/02

CPC classification number: H01F41/303 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01L27/228 ,  H01L43/08

Abstract: Portions excluding magnetic elements of a laminate film of magnetic films or the like constituting magnetic elements (1) are oxidized/nitrided or oxynitrided to be insulated by a plasma processing using a conductive mask (17), whereby a plurality of magnetic elements are separated. This laminate film comprises a magnetic element region (18) formed with magnetic elements (1) and an insulated region (19) consisting of oxides/nitrides or oxynitrides. Upper wiring such as a bit line (3) is formed later. Since the conductive mask used in forming the insulated region is made part of the upper wiring, the magnetic elements and the upper wiring can be disposed in contact with each other.

Abstract translation: 构成磁性元件（1）的磁性膜等的层压膜的磁性元件的部分，通过使用导电性掩模（17）的等离子体处理而被氧化/氮化或氮氧化而被绝缘，从而分离多个磁性元件。 该层压膜包括形成有磁性元件（1）的磁性元件区域（18）和由氧化物/氮化物或氮氧化物组成的绝缘区域（19）。 稍后形成诸如位线（3）的上部布线。 由于在形成绝缘区域中使用的导电掩模被制成上部布线的一部分，因此可以使磁性元件和上部布线彼此接触。