Invention Application
- Patent Title: Semiconductor storage device and production method therefor
- Patent Title (中): 半导体存储装置及其制造方法
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Application No.: US10514126Application Date: 2003-05-13
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Publication No.: US20050174876A1Publication Date: 2005-08-11
- Inventor: Yuukoh Katoh
- Applicant: Yuukoh Katoh
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- International Application: PCT/JP03/05953 WO 20030513
- Main IPC: H01F10/32
- IPC: H01F10/32 ; H01F41/30 ; H01L21/8246 ; H01L27/22 ; H01L43/08 ; G11C8/02

Abstract:
Portions excluding magnetic elements of a laminate film of magnetic films or the like constituting magnetic elements (1) are oxidized/nitrided or oxynitrided to be insulated by a plasma processing using a conductive mask (17), whereby a plurality of magnetic elements are separated. This laminate film comprises a magnetic element region (18) formed with magnetic elements (1) and an insulated region (19) consisting of oxides/nitrides or oxynitrides. Upper wiring such as a bit line (3) is formed later. Since the conductive mask used in forming the insulated region is made part of the upper wiring, the magnetic elements and the upper wiring can be disposed in contact with each other.
Public/Granted literature
- US07723827B2 Semiconductor storage device and production method therefor Public/Granted day:2010-05-25
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