公开(公告)号：US09910369B2

公开(公告)日：2018-03-06

申请号：US15450611

申请日：2017-03-06

申请人： NIKON CORPORATION

发明人： Hiroyuki Nagasaka

IPC分类号： G03B27/42 ,  G03F7/20

CPC分类号： G03F7/70866 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70725

摘要： A liquid immersion exposure apparatus includes a liquid-immersion-area-forming-member having an opening through which an exposure light is projected, the-liquid-immersion-area-forming-member having a first liquid supply inlet facing downward, a second liquid supply inlet provided opposite to an outer surface of the final optical element, and a first removal outlet facing downward. A liquid immersion area is formed on a portion of an upper surface of a substrate while performing a liquid supply via the first liquid supply inlet to a gap between the liquid-immersion-area-forming-member and the upper surface of the substrate, a liquid supply via the second liquid supply inlet to a gap between the liquid-immersion-area-forming-member and a final optical element of a projection system and a liquid removal via the first removal outlet from the gap between the liquid-immersion-area-forming-member and the upper surface of the substrate.

公开(公告)号：US09904172B2

公开(公告)日：2018-02-27

申请号：US14961046

申请日：2015-12-07

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Kentaro Kumaki ,  Satoshi Watanabe ,  Koji Hasegawa ,  Daisuke Domon ,  Kenji Yamada

IPC分类号： G03F7/40 ,  C08L25/08 ,  C08L33/14 ,  C08L25/18 ,  C08F220/30 ,  C08F220/34 ,  C08F220/26 ,  C08F226/06 ,  C08F226/02 ,  G03F7/11 ,  C08F220/36 ,  G03F7/004 ,  G03F7/039 ,  G03F7/32 ,  C08F220/28 ,  G03F7/20

CPC分类号： G03F7/40 ,  C08F220/26 ,  C08F220/30 ,  C08F220/34 ,  C08F220/36 ,  C08F226/02 ,  C08F226/06 ,  C08F2220/283 ,  C08F2220/285 ,  C08L25/08 ,  C08L25/18 ,  C08L33/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2041 ,  G03F7/325

摘要： A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.

公开(公告)号：US09897918B2

公开(公告)日：2018-02-20

申请号：US15456641

申请日：2017-03-13

申请人： Toshiba Memory Corporation

发明人： Tomoyuki Takeishi ,  Hirokazu Kato ,  Shinichi Ito

IPC分类号： H01L21/00 ,  G03F7/09 ,  H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  G03F7/20 ,  G03F7/16 ,  G03F7/039 ,  G03F7/38 ,  G03F7/11 ,  G03F7/004 ,  G03F7/30

CPC分类号： G03F7/094 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/20 ,  G03F7/2006 ,  G03F7/2022 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  H01L21/02052 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/67023

摘要： A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.

公开(公告)号：US09885956B2

公开(公告)日：2018-02-06

申请号：US14606161

申请日：2015-01-27

申请人： FUJIFILM Corporation

发明人： Tsukasa Yamanaka ,  Naoya Iguchi ,  Ryosuke Ueba ,  Kei Yamamoto

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/00 ,  G03F7/039 ,  G03F7/11 ,  G03F7/32

CPC分类号： G03F7/2022 ,  G03F7/0035 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/70466

摘要： A pattern forming method includes: (a) forming a first film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition (I) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (b) exposing the first film; (c) developing the exposed first film using a developer containing an organic solvent to form a first negative pattern; (e) forming a second film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition (II) containing a resin of which solubility in a developer containing an organic solvent decreases due to polarity increased by an action of an acid; (f) exposing the second film; and (g) developing the exposed second film using a developer containing an organic solvent to form a second negative pattern in this order.

公开(公告)号：US20180031967A1

公开(公告)日：2018-02-01

申请号：US15662677

申请日：2017-07-28

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Suk-koo HONG ,  Kyoung-yong CHO ,  Hyo-sung LEE ,  Gum-hye JEON ,  Mi-yeong KANG ,  Gun-woo PARK

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  C07D333/46 ,  C07C309/12 ,  C07C309/17 ,  C07C309/73 ,  C07C381/12 ,  G03F7/027 ,  G03F7/039

CPC分类号： G03F7/0045 ,  C07C303/32 ,  C07C309/05 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/65 ,  C07C309/73 ,  C07C381/12 ,  C07D333/46 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

摘要： A photoacid generator (PAG) and a photoresist composition, the PAG being represented by the following Chemical Formula (I): wherein, in Chemical Formula (I), L is sulfur (S) or iodine (I), R3 being omitted when L is I; R1, R2, and R3 are each independently a C1 to C10 alkyl, alkenyl, alkynyl, or alkoxy group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L, or a C6 to C18 aryl, arylalkyl, or alkylaryl group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and L; AL is an acid-labile group; m is 1 to 4; and M is a C1 to C30 hydrocarbon group that is unsubstituted or substituted with a heteroatom such that the heteroatom is pendant or is between the group and a sulfur atom.

公开(公告)号：US09869929B2

公开(公告)日：2018-01-16

申请号：US14854830

申请日：2015-09-15

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Tatsuro Masuyama ,  Yuki Suzuki ,  Koji Ichikawa

IPC分类号： G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/38 ,  C08F220/22 ,  C08F222/18

CPC分类号： G03F7/0397 ,  C08F220/22 ,  C08F222/18 ,  C08F2222/185 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325 ,  G03F7/38

摘要： A resist composition include (A1) a resin which includes a structural unit represented by formula (a4), and which resin has neither an acid-labile group nor an aromatic ring, (A2) a resin having an acid-labile group, and an acid generator, wherein R3 represents a hydrogen atom or a methyl group, R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group; and a structural unit having a ketone group.

公开(公告)号：US20180004100A1

公开(公告)日：2018-01-04

申请号：US15707703

申请日：2017-09-18

申请人： ASML NETHERLANDS B.V.

发明人： Hans Jansen ,  Marco Koert Stavenga ,  Jacobus Johannus Leonardus Hendricus Verspay ,  Franciscus Johannes Joseph Janssen ,  Anthonie Kuijper

IPC分类号： G03F7/20

CPC分类号： G03F7/70858 ,  G03F7/2041 ,  G03F7/70341

摘要： An immersion liquid is provided comprising an ion-forming component, e.g. an acid or a base, which has a relatively high vapor pressure. Also provided are lithography processes and lithography systems using the immersion liquid.

公开(公告)号：US09851637B2

公开(公告)日：2017-12-26

申请号：US15284721

申请日：2016-10-04

申请人： TOKYO OHKA KOGYO CO., LTD.

发明人： Takashi Nagamine ,  Kotaro Endo ,  Hideto Nito

IPC分类号： G03F7/004 ,  G03F7/40 ,  C07C65/10 ,  C07C63/08 ,  C07C65/05 ,  C07C321/28 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C07C381/12

CPC分类号： G03F7/0045 ,  C07C63/08 ,  C07C65/05 ,  C07C65/10 ,  C07C321/28 ,  C07C381/12 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

摘要： A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a compound (D1) represented by general formula (d1), wherein Z− represents an anion having an aromatic ring containing a hydroxybenzoic acid skeleton, provided that at least one hydrogen atom of the aromatic ring has been substituted with a halogen atom; m represents an integer of 1 or more; and Mm+ represents an organic cation having a valency of m. Z−(Mm+)1/m  (d1)

公开(公告)号：US09841679B2

公开(公告)日：2017-12-12

申请号：US15158848

申请日：2016-05-19

申请人： FUJIFILM Corporation

发明人： Masafumi Kojima ,  Akiyoshi Goto ,  Akinori Shibuya ,  Keita Kato ,  Kei Yamamoto

IPC分类号： G03F7/004 ,  G03F7/38 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  G03F7/038

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

摘要： An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (P) having a partial structure represented by General Formula (X), and a compound capable of generating an acid upon irradiation with actinic ray or radiation.

公开(公告)号：US20170329228A1

公开(公告)日：2017-11-16

申请号：US15592373

申请日：2017-05-11

申请人： JSR CORPORATION

发明人： Tomohiko SAKURAI ,  Sousuke OOSAWA ,  Hiromitsu NAKASHIMA ,  Kousuke TERAYAMA

IPC分类号： G03F7/11 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/039 ,  G03F7/038 ,  G03F7/40 ,  G03F7/004

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： A resist pattern-forming method includes applying a photoresist composition directly or indirectly on a front face of a substrate to form a photoresist film. A topcoat layer is laminated directly or indirectly on a front face of the photoresist film. The photoresist film is subjected to liquid immersion lithography in a presence of a liquid immersion liquid on a front face of the topcoat layer. Part of the topcoat layer is removed after subjecting the photoresist film to the liquid immersion lithography. The photoresist film is developed after the part of the topcoat layer is removed.