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公开(公告)号：US20230163136A1
公开(公告)日：2023-05-25
申请号：US16966119
申请日：2020-04-20
Inventor： Juncheng XIAO , Yong XU , Fei AI , Dewei SONG
IPC: H01L27/12
CPC classification number: H01L27/1225 , H01L27/1288 , H01L27/1285
Abstract: A display panel, an array substrate, and a manufacturing method thereof, wherein the array substrate includes a thin film transistor device, and an interface layer, a first transparent conductive layer, a passivation layer, and a second transparent conductive layer which are formed on the thin film transistor device in sequence. By replacing a planarization layer in the prior art with the interface layer, performing a gate re-etching process, and perforating the interface layer and the passivation layer to simultaneously form a deep via and a shallow via, a number of photomasks required to form the array substrate is reduced to 8. It effectively reduces costs of production materials and costs of photomasks.
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公开(公告)号：US20210408080A1
公开(公告)日：2021-12-30
申请号：US16757175
申请日：2019-12-12
Inventor： Fei AI , Dewei SONG
IPC: H01L27/12 , G02F1/1368 , G02F1/1343 , G02F1/136
Abstract: The invention provides a thin film transistor (TFT) array substrate, a manufacturing method thereof, and a display panel. The TFT array substrate includes a substrate. A buffer layer and a TFT functional layer are sequentially disposed on the substrate. The TFT functional layer includes an active layer (Active), a gate insulating layer (GI), a gate layer (GE), an interlayer insulating layer (ILD), and a source-drain layer (SD) that are sequentially disposed on the buffer layer. An inorganic insulating layer is disposed on the source-drain layer, and a backside indium tin oxide (BITO) layer, a passivation layer (PV), and a top indium tin oxide (TITO) layer are sequentially disposed on the inorganic insulating layer. The invention provides the TFT array substrate. The TFT array substrate adopts a new functional layer structure design, which can effectively reduce production cost and cycle time of the TFT array substrate.
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公开(公告)号：US20250126892A1
公开(公告)日：2025-04-17
申请号：US18561748
申请日：2023-10-31
Inventor： Congxing YANG , Chunpeng ZHANG , Fei AI , Jianfeng YUAN
IPC: H10D86/40 , G02F1/1345 , G02F1/1362 , G02F1/1368
Abstract: An embodiment of the present application discloses an array substrate and a liquid crystal display panel. The array substrate uses a first barrier layer including a first aperture in an aperture region. The first barrier layer is at least correspondingly disposed in a thin film transistor disposing region and a gate driver on array circuit region. The first barrier layer is configured to block the alkaline cation from spreading along a direction to the active layer. Along a direction at a right angle from the substrate to the active layer, a depth by which the alkaline cation enters the first barrier layer is less than or equal to 20 Å.
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公开(公告)号：US20250078728A1
公开(公告)日：2025-03-06
申请号：US18247256
申请日：2023-02-08
Inventor： Chao TIAN , Mingyue LI , Yanqing GUAN , Haiming CAO , Fei AI , Guanghui LIU
IPC: G09G3/32
Abstract: An embodiment of the present disclosure is directed to a display panel. The display panel includes a plurality of scan lines and a plurality of forward and reverse scan pull-down circuit. The plurality of scan lines is located on the display area. Each of the forward and reverse scan pull-down circuits includes a forward scan control module, a reverse scan control module, and a pull-down module located on a display area. The pull-down module includes an output terminal and a control terminal coupled to an output terminal of the forward scan control module and an output terminal of the reverse scan control module.
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公开(公告)号：US20250037668A1
公开(公告)日：2025-01-30
申请号：US18914469
申请日：2024-10-14
Inventor： Chao TIAN , Yanqing GUAN , Guanghui LIU , Fei AI
IPC: G09G3/3266 , G09G3/20 , G09G3/36
Abstract: The present application provides a display panel and a display device. An N-th auxiliary unit is arranged in a display area of the display panel. An output end of the N-th auxiliary unit is connected to an N-th scan line. By connecting the auxiliary unit arranged in the display area to the corresponding scan line, a falling edge of a scan signal transmitted in the scan line can have sharp falling or a rising edge of the scan signal can have sharp rising, which can alleviate a signal distortion problem caused by transmission delay in the display area.
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Patent Agency Ranking
公开(公告)号：US20250035981A1
公开(公告)日：2025-01-30
申请号：US18915693
申请日：2024-10-15
Inventor： Fei AI , Dewei SONG , Chengzhi LUO
IPC: G02F1/1335 , G02F1/1333 , G02F1/1368
Abstract: The present disclosure provides a display panel and a display device including the display panel. The display panel includes an array substrate including a light inlet side and a light outlet side oppositely arranged, including a plurality of opening regions for passing though light and a plurality of non-opening regions in addition to the plurality of opening regions, and including an insulation structure. The insulation structure includes a first groove located in the opening regions, recessed in a direction from the light outlet side toward the light inlet side, and filled with insulation materials. The insulation materials include a first insulation layer and a second insulation layer disposed on one side of the first insulation layer close to the light inlet side. The second insulation layer has a refractive index less than a refractive index of the first insulation layer.
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公开(公告)号：US20240421173A1
公开(公告)日：2024-12-19
申请号：US17596881
申请日：2021-12-15
Inventor： Jiyue SONG , Fei AI , Dewei SONG , Fan GONG
IPC: H01L27/146 , G02F1/1333 , G02F1/1368
Abstract: An embodiment of the present application discloses a display panel and a display panel manufacturing method. The photosensitive element and the thin film transistor device are disposed on the same side of the substrate. Some components of the photosensitive element and some components of the thin film transistor device can be manufactured by the same step, and therefore can improve integration of the photosensitive element on the array substrate. Furthermore, the photosensitive element can be integrated in the display panel with reduced photomasks and a lowered cost.
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公开(公告)号：US20240387556A1
公开(公告)日：2024-11-21
申请号：US18373361
申请日：2023-09-27
Inventor： Fei AI , Zhuang LI , Wenhui XIONG
IPC: H01L27/12
Abstract: A semiconductor device and a display panel are disclosed. The semiconductor device includes an insulating substrate and a thin film transistor on the insulating substrate. The thin film transistor includes a protrusion and an active layer. The protrusion includes a first sub-protrusion on the insulating substrate, and a second sub-protrusion on the first sub-protrusion. The second sub-protrusion completely covers a side of the first sub-protrusion away from the insulating substrate. The active layer includes a first ohmic contact portion, a channel portion connected to the first ohmic contact portion, and a second ohmic contact portion connected to the channel portion. The first ohmic contact portion is at least partially disposed on the insulating substrate. The channel portion is fitted to a side surface of the first sub-protrusion and a side surface of the second sub-protrusion.
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公开(公告)号：US20240363047A1
公开(公告)日：2024-10-31
申请号：US18038717
申请日：2023-03-31
Inventor： Mingyue LI , Chao TIAN , Fei AI
IPC: G09G3/20
CPC classification number: G09G3/20 , G09G2300/0408 , G09G2300/0426 , G09G2310/0283 , G09G2310/06
Abstract: A display panel and a display device are provided. Waveform adjustment modules with a higher distribution density are arranged in an area of a display area farther away from a gate driving circuit. This way, a problem of significant delays of scan signals in the display panel is improved, and the scan signals have the same or similar delays at different positions of the display area, which is advantageous for improving the display uniformity.
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公开(公告)号：US20240234576A1
公开(公告)日：2024-07-11
申请号：US17925085
申请日：2022-11-04
Inventor： Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG , Chengzhi LUO
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/78642 , H01L27/1222 , H01L27/127 , H01L29/6675 , H01L29/78618 , H01L29/78633 , H01L29/78672 , H01L29/78696
Abstract: The present application provides a thin-film transistor having a vertical structure and an electronic device. In the thin-film transistor having the vertical structure, the thin-film transistor includes a first doped portion and a second portion, the second doped portion is connected to and partly in contact with a channel portion through a via hole by arranging the second doped portion in the via hole of an insulating layer, which can reduce a contact area between the second doped portion and the channel portion, thereby reducing ions diffusing into a channel region and improving device stability of the thin-film transistor. Also, in the thin-film transistor having the vertical structure, a projection area of the thin-film transistor can be reduced, improving an aperture ratio of a display panel.
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