公开(公告)号：US08229373B2

公开(公告)日：2012-07-24

申请号：US11430172

申请日：2006-05-09

Applicant: Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H01Q11/12

CPC classification number: H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

公开(公告)号：US07547929B2

公开(公告)日：2009-06-16

申请号：US11247234

申请日：2005-10-12

Applicant: Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

Inventor： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

IPC: H01L29/40

CPC classification number: H01L23/482 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

Abstract translation: 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。

公开(公告)号：US07368996B2

公开(公告)日：2008-05-06

申请号：US11209692

申请日：2005-08-24

Applicant: Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

Inventor： Tomonori Tanoue ,  Masami Ohnishi ,  Hidetoshi Matsumoto ,  Akira Kuriyama

IPC: H03F3/45

CPC classification number: H03F3/191 ,  H03F1/26 ,  H03F3/24 ,  H03F3/45085 ,  H03F2200/09 ,  H03F2200/315 ,  H03F2200/318 ,  H03F2200/372 ,  H03F2200/391 ,  H03F2203/45638 ,  H03G1/0023 ,  H03G3/3042

Abstract: Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

Abstract translation: 公开了具有高度稳定和优异的可控性的功率放大器，并且与常规功率放大器相比具有低噪声。 使用功率放大器，在其初始阶段提供由晶体管Q 1，Q 2组成的差分放大器，并且平衡 - 不平衡变换器作为由Cp 1，Cp 2，Lp 1和Ct 1组成的级间匹配电路， Ct 2，Lt 1分别设置在初级和第二级之间，而在第二级提供不平衡单端电路。 差分放大器具有用于将两个发射极彼此耦合的发射极耦合型配置，并且通过改变耦合到两个发射极的电流源的电流来执行初始阶段放大器的输出控制。

公开(公告)号：US20070046370A1

公开(公告)日：2007-03-01

申请号：US11489609

申请日：2006-07-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

IPC: H03G3/10

CPC classification number: H03G3/3042 ,  H03F1/30 ,  H03F3/189 ,  H03F3/68 ,  H03G3/3047

Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

Abstract translation: 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。

公开(公告)号：US20060267688A1

公开(公告)日：2006-11-30

申请号：US11430172

申请日：2006-05-09

Applicant: Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H03G3/00

CPC classification number: H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

Abstract translation: 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的AC电压振幅，并且当电压幅度超过预定阈值时，抑制功率放大器的输入信号幅度。

公开(公告)号：US20060061417A1

公开(公告)日：2006-03-23

申请号：US11182859

申请日：2005-07-18

Applicant: Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H03F1/14 ,  H03F3/191

CPC classification number: H03F1/0277 ,  H03F3/191 ,  H03F3/72 ,  H03F2203/7206

Abstract: For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

Abstract translation: 为了在包括大功率放大器和低功率放大器的放大器配置中使用，该功率放大器和低功率放大器总是在高频率下互连，并且在不使用开关的情况下进行开关之间，高稳定的高频功率放大器模块之间具有高隔离度 提供放大器。 为了将处于激活状态的低功率放大器部分的周围环绕到处于去激活状态的高功率放大器部分或者处于激活状态的高功率放大器部分到处于去激活状态的低功率放大器部分， 具有高隔离特性的输入匹配电路包括在与放大器效率无关的输入匹配电路部分中。 每个放大器部分在激活状态和去激活状态之间的切换通过使用偏置输入端的控制来实现。

公开(公告)号：US20060012425A1

公开(公告)日：2006-01-19

申请号：US11230467

申请日：2005-09-21

Applicant: Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

Inventor： Masami Ohnishi ,  Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Osamu Kagaya ,  Kenji Sekine

IPC: H03F3/68

CPC classification number: H03F1/56 ,  H03F1/0277 ,  H03F1/565 ,  H03F3/602 ,  H03F3/72 ,  H03F2203/7209

Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

公开(公告)号：US20050046474A1

公开(公告)日：2005-03-03

申请号：US10922146

申请日：2004-08-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

IPC: H03F3/20 ,  H03F1/02 ,  H03F1/32 ,  H03F3/19 ,  H03F3/38 ,  H04B1/04

CPC classification number: H03F1/0227 ,  H03F2200/432

Abstract: An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC-DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC-DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.

Abstract translation: 提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。 放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入 信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。

公开(公告)号：US06710649B2

公开(公告)日：2004-03-23

申请号：US10239157

申请日：2002-11-21

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC: H03F368

CPC classification number: H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

Abstract translation: 功率放大器模块包括多个放大器级，每个放大器级包括用于模拟放大器的操作的参考放大器。 根据输入功率电平流向形成每个参考放大器的双极晶体管的基极的电流被检测，放大并作为相应放大器的晶体管的基极电流提供。

公开(公告)号：US20070190962A1

公开(公告)日：2007-08-16

申请号：US11618207

申请日：2006-12-29

Applicant: Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

Inventor： Kenji Sasaki ,  Tomonori Tanoue ,  Sakae Kikuchi ,  Toshifumi Makino ,  Takeshi Sato ,  Tsutomu Kobori ,  Yasunari Umemoto ,  Takashi Kitahara

IPC: H04B1/06 ,  H04B1/28 ,  H04B7/00

CPC classification number: H04B1/28 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L25/18 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Abstract translation: 提供了一种技术，使得用于蜂窝电话等的RF模块的尺寸可以减小。 在构成RF模块的布线板上，设置有形成放大器电路的第一半导体芯片和形成用于控制放大器电路的控制电路的第二半导体芯片。 第二半导体芯片上的接合焊盘通过导线直接通过第一半导体芯片上的接合焊盘连接而不使用继电器垫。 在这方面，形成在第一半导体芯片上的焊盘不是正方形，而是矩形（长方形）。