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公开(公告)号：US07368988B2
公开(公告)日：2008-05-06
申请号：US11489609
申请日：2006-07-20
Applicant: Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
Inventor： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
IPC: H03G5/16
CPC classification number: H03G3/3042 , H03F1/30 , H03F3/189 , H03F3/68 , H03G3/3047
Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.
Abstract translation: 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。
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2.发明申请Semiconductor device and a manufacturing method thereof, and semiconductor module 失效半导体装置及其制造方法以及半导体模块公开(公告)号：US20060081879A1
公开(公告)日：2006-04-20
申请号：US11247234
申请日：2005-10-12
Applicant: Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
Inventor： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC: H01L31/109
CPC classification number: H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
Abstract translation: 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。
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公开(公告)号：US06943387B2
公开(公告)日：2005-09-13
申请号：US10409455
申请日：2003-04-09
Applicant: Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
Inventor： Isao Ohbu , Tomonori Tanoue , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa , Kazuhiro Mochizuki , Masami Ohnishi , Hidetoshi Matsumoto
IPC: H01L21/331 , H01L29/06 , H01L29/423 , H01L29/737 , H03F1/30 , H03F3/19 , H01L31/072
CPC classification number: H01L29/66318 , H01L29/0692 , H01L29/42304 , H01L29/7371 , H01L2924/15153 , H01L2924/1517 , H01L2924/16152 , H03F1/302 , H03F3/19 , H03F2203/21178
Abstract: In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
Abstract translation: 在使用具有环状形状的发射极顶面异质结双极晶体管的半导体器件中，提供了仅在环状发射极 - 基极结区域的内侧存在基极的结构。 这允许减小每单位发射极面积的基极/集电极结电容，由此可以实现具有高功率增加效率和适用于功率放大器的高功率增益的半导体器件。 此外，在包括具有一个或多个双极晶体管的第一和第二放大器电路的多级功率放大器中，第一放大器电路中的双极晶体管使用具有矩形形状的平面形状的发射极和第二放大器中的双极晶体管 电路仅在发射体的内侧使用具有环状形状的发射体和基极。
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公开(公告)号：US07547929B2
公开(公告)日：2009-06-16
申请号：US11247234
申请日：2005-10-12
Applicant: Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
Inventor： Kenichi Tanaka , Hidetoshi Matsumoto , Isao Ohbu , Kazuhiro Mochizuki , Tomonori Tanoue , Chisaki Takubo , Hiroyuki Uchiyama
IPC: H01L29/40
CPC classification number: H01L23/482 , H01L24/48 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/1305 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
Abstract translation: 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。
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公开(公告)号：US20070046370A1
公开(公告)日：2007-03-01
申请号：US11489609
申请日：2006-07-20
Applicant: Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
Inventor： Hidetoshi Matsumoto , Tomonori Tanoue , Isao Ohbu
IPC: H03G3/10
CPC classification number: H03G3/3042 , H03F1/30 , H03F3/189 , H03F3/68 , H03G3/3047
Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.
Abstract translation: 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。
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Patent Agency Ranking
公开(公告)号：US07248118B2
公开(公告)日：2007-07-24
申请号：US10830049
申请日：2004-04-23
Applicant: Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
Inventor： Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
IPC: H03G3/10
CPC classification number: H03F1/30 , H01L2224/73265 , H03F1/02 , H03F3/195
Abstract: A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.
Abstract translation: 针对连接偏置控制部分和射频功率放大器部分而不增加模块基板面积的偏置电源线中的射频信号的充分衰减的射频功率放大器模块。 至少一个具有接地电容分量的接合焊盘106和由经由接合焊盘提供的接合线105组成的针脚结构电感108,109设置在偏置电源线中，该偏置电源线连接偏置控制部分和射频功率放大器部分 。
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公开(公告)号：US06949974B2
公开(公告)日：2005-09-27
申请号：US11023414
申请日：2004-12-29
Applicant: Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
Inventor： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
CPC classification number: H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
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公开(公告)号：US06943624B2
公开(公告)日：2005-09-13
申请号：US10161737
申请日：2002-06-05
Applicant: Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
Inventor： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
CPC classification number: H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
Abstract: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
Abstract translation: 本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M 12和第一级匹配网络M 13连接到功率放大器单元A11和功率放大器单元A12的相应输出节点，功率放大器单元A 11和功率放大器单元A 12通过切换操作，连接第一级匹配网络 在M12和M13的连接点与输出端子OUT，第一级匹配网络M 12，M 13以及最后一级匹配网络M12之间连接最后一级匹配网络M 11， 对于功率放大器单元A 11和A 12两者形成级匹配网络M 11，使得当一个单元在操作中另一个处于停止操作时在输出端子OUT和功率放大器单元之间建立阻抗匹配 。 本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。
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公开(公告)号：US20050088236A1
公开(公告)日：2005-04-28
申请号：US10975431
申请日：2004-10-29
Applicant: Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
Inventor： Hidetoshi Matsumoto , Tomonori Tanoue , Satoshi Tanaka , Kiichi Yamashita
CPC classification number: H03F1/56 , H03F1/0222 , H03F1/0261 , H03F1/0266 , H03F1/301 , H03F1/302 , H03F1/306 , H03F3/19 , H03F3/1935 , H03F2200/318 , H03F2200/453
Abstract: A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.
Abstract translation: 提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。 直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。 功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。 提供给DC电流放大器的输入信号响应于输入功率电平而改变。
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10.发明申请HIGH FREQUENCY POWER AMPLIFIER, TRANSMITTER AND MOBILE COMMUNICATION TERMINAL USING THE POWER AMPLIFIER 有权使用功率放大器的高频功率放大器，发射器和移动通信终端公开(公告)号：US20120208476A1
公开(公告)日：2012-08-16
申请号：US13451850
申请日：2012-04-20
Applicant: Tomonori Tanoue , Hidetoshi Matsumoto
Inventor： Tomonori Tanoue , Hidetoshi Matsumoto
CPC classification number: H03G3/3042 , H03F1/0261 , H03F3/191 , H03F3/24 , H03F2200/105 , H03F2200/207 , H03F2200/294 , H03F2200/372 , H03F2200/471 , H03F2200/99
Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.
Abstract translation: 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的交流电压振幅，并且当电压振幅超过预定阈值时，抑制功率放大器的输入信号振幅。
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