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    Process Chamber and Substrate Processing Apparatus Including the Same
    21.
    发明申请
    Process Chamber and Substrate Processing Apparatus Including the Same 有权

    公开(公告)号：US20210217636A1

    公开(公告)日：2021-07-15

    申请号：US17217417

    申请日：2021-03-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/67 ,  H01L21/02

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

    Method of treating substrates using supercritical fluids
    22.
    发明授权
    Method of treating substrates using supercritical fluids 有权

    公开(公告)号：US10679843B2

    公开(公告)日：2020-06-09

    申请号：US16133789

    申请日：2018-09-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji-Hoon Jeong ,  Jung-Min Oh ,  Kun-Tack Lee ,  Hyo-San Lee

    IPC: H01L21/02 ,  H01L21/67

    Abstract: A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

    Substrate treating apparatus
    23.
    发明授权
    Substrate treating apparatus 有权

    公开(公告)号：US10186427B2

    公开(公告)日：2019-01-22

    申请号：US15833184

    申请日：2017-12-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung Hwan Kim ,  Ingi Kim ,  Mihyun Park ,  Young-Hoo Kim ,  Ui-soon Park ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

    IPC: H01L21/311 ,  H01L21/67

    Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

    Substrate treating apparatus
    26.
    发明授权
    Substrate treating apparatus 有权

    公开(公告)号：US09627233B2

    公开(公告)日：2017-04-18

    申请号：US14187556

    申请日：2014-02-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： SeokHoon Kim ,  Yongmyung Jun ,  Yongsun Ko ,  Kyoungseob Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Jihoon Jeong ,  Yong-Jhin Cho

    IPC: B05B1/14 ,  H01L21/67

    CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67051

    Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

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