公开(公告)号：US20170179338A1

公开(公告)日：2017-06-22

申请号：US15386512

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  H01L33/34 ,  H01L33/32 ,  H01L33/30 ,  H01L33/24 ,  H01L33/28

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20170121598A1

公开(公告)日：2017-05-04

申请号：US15335700

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yongwook KIM ,  Garam PARK

IPC: C09K11/02 ,  C09K11/61 ,  C08K3/16 ,  C09K11/88

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/16 ,  C08K2201/001 ,  C09K11/02 ,  C09K11/616 ,  C09K11/665 ,  C09K11/88 ,  C09K11/881 ,  C09K11/883 ,  H01L27/322 ,  H01L2251/5369 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α  Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers

公开(公告)号：US20250029656A1

公开(公告)日：2025-01-23

申请号：US18774249

申请日：2024-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yumin KIM ,  Seyun KIM ,  Garam PARK ,  Hyunjae SONG ,  Seungyeul YANG ,  Seungdam HYUN

IPC: G11C13/00

Abstract: A memory device including a variable serial resistive element having a voltage dividing effect and an operating method thereof are disclosed. The memory device includes a memory unit, a variable serial resistive element connected to the memory unit, a controller connected to the variable serial resistive element and configured to control a resistance of the variable serial resistive element, and a power source connected to the variable serial resistive element. The operating method of the memory device includes maintaining a resistance of a serial resistive element connected to a memory element as a first resistance during a first operation of the memory element and maintaining the resistance of the serial resistive element as a second resistance during a second operation of the memory element, wherein the serial resistive element includes a variable resistive element.

公开(公告)号：US20240065001A1

公开(公告)日：2024-02-22

申请号：US18299403

申请日：2023-04-12

Applicant: SAMSUNG ELECTRONICS CO,LTD.

Inventor： Seyun KIM ,  Jooheon KANG ,  Sunho KIM ,  Yumin KIM ,  Garam PARK ,  Hyunjae SONG ,  Dongho AHN ,  Seungyeul YANG ,  Myunghun WOO ,  Jinwoo LEE

IPC: H10B63/00

CPC classification number: H10B63/845 ,  H10B63/34

Abstract: Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.

公开(公告)号：US20230121293A1

公开(公告)日：2023-04-20

申请号：US18074570

申请日：2022-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon YANG ,  Garam PARK ,  Shin Ae JUN ,  Tae Gon KIM ,  Taekhoon KIM

IPC: C09K11/70 ,  C09K11/08 ,  C09K11/02 ,  H10K59/12 ,  G02F1/13357 ,  H10K59/38

Abstract: A quantum dot including a multi-component core including a first semiconductor nanocrystal including indium (In), zinc (Zn), and phosphorus (P) and a second semiconductor nanocrystal disposed on the first semiconductor nanocrystal, the second semiconductor nanocrystal including gallium (Ga) and phosphorus (P) wherein the quantum dot is cadmium-free and emits green light, a mole ratio (P:In) of phosphorus relative to indium is greater than or equal to about 0.6:1 and less than or equal to about 1.0, and a mole ratio (P:(In+Ga)) of phosphorus relative to indium and gallium is greater than or equal to about 0.5:1 and less than or equal to about 0.8:1, a quantum dot-polymer composite pattern including the same, and a display device.

公开(公告)号：US20230086635A1

公开(公告)日：2023-03-23

申请号：US18059075

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Eun Joo JANG ,  Yongwook KIM ,  Jihyun MIN ,  Hyo Sook JANG ,  Shin Ae JUN ,  Taekhoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/70

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US20230043195A1

公开(公告)日：2023-02-09

申请号：US17871127

申请日：2022-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon KIM ,  Shang Hyeun PARK ,  Taekhoon KIM ,  Garam PARK ,  Nayoun WON

IPC: C09K11/02 ,  C09K11/88 ,  C09K11/56 ,  C09K11/70 ,  H01L27/32

Abstract: A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

公开(公告)号：US20220017818A1

公开(公告)日：2022-01-20

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20170183565A1

公开(公告)日：2017-06-29

申请号：US15387107

申请日：2016-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae JUN ,  Taekhoon KIM ,  Garam PARK ,  Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Won JEONG ,  Shang Hyeun PARK

IPC: C09K11/02 ,  C08K3/30 ,  C08K3/32 ,  C09K11/88 ,  C09K11/70

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.