Spintronic temperature sensor
    23.
    发明授权

    公开(公告)号:US10794774B2

    公开(公告)日:2020-10-06

    申请号:US15828976

    申请日:2017-12-01

    Abstract: This disclosure describes various examples of spintronic temperature sensors. The example temperature sensors may be discrete or used to adaptively control operation of a component such as an integrated circuit (IC). In one example, an electronic device comprises a spintronic component configured such that the conductance of the spintronic component is based on sensed temperature. In one example, circuitry coupled to the spintronic component is configured to generate an electrical signal indicative of the sensed temperature based on the conductance of the spintronic component.

    Optical interconnect in spin-based computation and communication systems

    公开(公告)号:US10454592B2

    公开(公告)日:2019-10-22

    申请号:US15972357

    申请日:2018-05-07

    Abstract: Techniques are described for data transfer in spin-based systems where digital bit values are represented by magnetization states of magnetoresistive devices rather than voltages or currents. For data transmission, a spin-based signal is converted to an optical signal and transmitted via an optical transport. For data reception, the optical signal is received via the optical transport and converted back to a spin-based signal. Such data transfer may not require an intervening conversion of the spin-based signal to charge-based signal that relies on voltages or currents to represent digital bit values. In addition, techniques are described to use magnetoresistive devices to control the amount of current or voltage that is delivered, where the magnetization state of the magnetoresistive device is set by an optical signal.

    SPIN HALL EFFECT MAGNETIC STRUCTURES
    26.
    发明申请

    公开(公告)号:US20180203077A1

    公开(公告)日:2018-07-19

    申请号:US15918942

    申请日:2018-03-12

    CPC classification number: G01R33/075 G01R33/077 G01R33/1284

    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

    Embedded mask patterning process for fabricating magnetic media and other structures

    公开(公告)号:US09721767B2

    公开(公告)日:2017-08-01

    申请号:US14422262

    申请日:2013-08-21

    CPC classification number: H01J37/32899 C23C16/44 G11B5/855

    Abstract: In some examples, a method comprising depositing a functional layer (e.g., a magnetic layer) over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing portions of the functional layer not masked by the hard mask layer, wherein the depositing of the functional layer, the depositing of the granular layer, removing the second material, and removing the portions of the functional layer are performed in a vacuum environment.

    SPIN HALL EFFECT MAGNETIC STRUCTURES
    29.
    发明申请

    公开(公告)号:US20170082697A1

    公开(公告)日:2017-03-23

    申请号:US14946069

    申请日:2015-11-19

    Abstract: An article may include a substantially perpendicularly magnetized free layer having a first magnetic orientation in the absence of an applied magnetic field. The article may also include a spin Hall channel layer configured to conduct a spin current configured to subject the perpendicularly magnetized free layer to a magnetic switching torque and a substantially in-plane magnetized bias layer configured to bias the substantially perpendicularly magnetized free layer to a second magnetic orientation. The second magnetic orientation is different than the first magnetic orientation and is out of a plane of the substantially perpendicularly magnetized free layer.

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