Low-power balanced crystal oscillator
    21.
    发明授权
    Low-power balanced crystal oscillator 有权
    低功耗平衡晶体振荡器

    公开(公告)号:US09531323B1

    公开(公告)日:2016-12-27

    申请号:US14748946

    申请日:2015-06-24

    Abstract: A circuit includes: first and second output terminals; a reference resonator coupled between the first and second output terminals; a cross-coupled oscillation unit coupled to the first and second output terminals; a first MOSFET diode coupled to the cross-coupled oscillation unit, the first MOSFET diode including a first transistor, a first resistor coupled between gate and drain terminals of the first transistor, and a first capacitor; a second MOSFET diode coupled to the cross-coupled oscillation unit, the second MOSFET diode including a second transistor, a second resistor coupled between gate and drain terminals of the second transistor, and a second capacitor cross coupled between the drain terminal of the second transistor and the gate terminal of the first transistor, wherein the first capacitor is cross coupled between the drain terminal of the first transistor and the gate terminal of the second transistor.

    Abstract translation: 电路包括:第一和第二输出端子; 耦合在所述第一和第二输出端子之间的参考谐振器; 耦合到所述第一和第二输出端子的交叉耦合振荡单元; 耦合到所述交叉耦合振荡单元的第一MOSFET二极管,所述第一MOSFET二极管包括第一晶体管,耦合在所述第一晶体管的栅极和漏极端子之间的第一电阻器和第一电容器; 耦合到交叉耦合振荡单元的第二MOSFET二极管,所述第二MOSFET二极管包括第二晶体管,耦合在所述第二晶体管的栅极和漏极端子之间的第二电阻器以及耦合在所述第二晶体管的漏极端子之间的第二电容器 和第一晶体管的栅极端子,其中第一电容器交叉耦合在第一晶体管的漏极端子和第二晶体管的栅极端子之间。

    ACTIVE NOTCH FILTER
    22.
    发明申请
    ACTIVE NOTCH FILTER 有权
    主动插槽过滤器

    公开(公告)号:US20160336915A1

    公开(公告)日:2016-11-17

    申请号:US14709897

    申请日:2015-05-12

    Abstract: A method and apparatus are disclosed for filtering a signal, such as a transmit communication signal with a configurable notch filter. The configurable notch filter may attenuate a set of frequencies near a selected notch frequency. In some embodiments, the configurable notch filter may include a variable resistor, a variable capacitor, a first inductor, and a second inductor. The variable resistor may be configured to compensate for resistive losses within the configurable notch filter. The variable capacitor may be configured to determine the set of frequencies to be attenuated.

    Abstract translation: 公开了一种用于对诸如具有可配置陷波滤波器的发射通信信号的信号进行滤波的方法和装置。 可配置的陷波滤波器可以衰减所选陷波频率附近的一组频率。 在一些实施例中,可配置陷波滤波器可以包括可变电阻器,可变电容器,第一电感器和第二电感器。 可变电阻器可以被配置为补偿可配置陷波滤波器内的电阻损耗。 可变电容器可以被配置为确定要衰减的频率集合。

    MULTI-BAND AMPLIFIER
    23.
    发明申请
    MULTI-BAND AMPLIFIER 有权
    多功能放大器

    公开(公告)号:US20160126983A1

    公开(公告)日:2016-05-05

    申请号:US14532309

    申请日:2014-11-04

    CPC classification number: H04B1/0064 H04B1/16 H04B5/0031 H04B5/0087 H04B5/0093

    Abstract: A multi-band amplifier may operate in a first frequency band and a second frequency band. The multi-band amplifier may include a first amplifier, a second amplifier, and a coupler. The coupler may couple a signal, such as a communication signal, to a selected amplifier. In some embodiments, the coupler may include one or more inductive elements to couple the signal to the first or the second amplifier. In some embodiments, the inductive elements may include a balun.

    Abstract translation: 多频带放大器可以在第一频带和第二频带中操作。 多频带放大器可以包括第一放大器,第二放大器和耦合器。 耦合器可以将诸如通信信号的信号耦合到所选择的放大器。 在一些实施例中,耦合器可以包括一个或多个感应元件以将信号耦合到第一或第二放大器。 在一些实施例中,感应元件可包括平衡 - 不平衡转换器。

    EM coupling shielding
    25.
    发明授权
    EM coupling shielding 有权
    EM耦合屏蔽

    公开(公告)号:US09209771B1

    公开(公告)日:2015-12-08

    申请号:US14307355

    申请日:2014-06-17

    Abstract: A method and an apparatus for canceling EM coupling are provided. The apparatus includes a ring structure at least partially surrounding an EM circuit. A negative transconductance circuit is coupled to ends of the ring structure. The negative transconductance circuit is configured to cancel an EM coupling to the EM circuit at a frequency. The method includes generating a plurality of settings for a negative transconductance circuit and tuning the negative transconductance circuit to one of the plurality of settings for the negative transconductance circuit to cancel an EM coupling to an EM circuit at a frequency.

    Abstract translation: 提供了用于消除EM耦合的方法和装置。 该装置包括至少部分地围绕EM电路的环形结构。 负跨导电路耦合到环结构的端部。 负跨导电路被配置为以一个频率消除与EM电路的EM耦合。 该方法包括产生用于负跨导电路的多个设置,并将负跨导电路调谐到用于负跨导电路的多个设置中的一个,以消除以一频率对EM电路的EM耦合。

    Spur cancellation using auxiliary synthesizer
    26.
    发明授权
    Spur cancellation using auxiliary synthesizer 有权
    使用辅助合成器进行排斥

    公开(公告)号:US09160584B1

    公开(公告)日:2015-10-13

    申请号:US14603127

    申请日:2015-01-22

    Abstract: A method and apparatus are disclosed for mitigating a frequency spur included with a transmitter output signal from a wireless device. For at least some embodiments, the wireless device may include an auxiliary synthesizer to generate a spur cancellation signal to be summed with the transmitter output signal to cancel or reduce the frequency spur. The auxiliary synthesizer may also generate an auxiliary clock signal to demodulate a received communication signal. In some embodiments, the transmitter output signal may be looped back to a receiver of the wireless device to determine whether the frequency spur is reduced below a threshold. Data from the receiver may be used to modify the spur cancellation signal.

    Abstract translation: 公开了一种用于减轻来自无线设备的发射机输出信号所包含的频率支路的方法和装置。 对于至少一些实施例,无线设备可以包括辅助合成器,以产生要与发射机输出信号相加的杂散消除信号,以消除或减少频率突发。 辅助合成器还可以产生辅助时钟信号以解调所接收的通信信号。 在一些实施例中,发射机输出信号可以环回到无线设备的接收机,以确定频率突发是否减小到低于阈值。 来自接收机的数据可以用于修改杂散消除信号。

    Metal Oxide Semiconductor (MOS) Capacitor with Improved Linearity
    27.
    发明申请
    Metal Oxide Semiconductor (MOS) Capacitor with Improved Linearity 有权
    具有改善线性度的金属氧化物半导体(MOS)电容器

    公开(公告)号:US20150061071A1

    公开(公告)日:2015-03-05

    申请号:US14014827

    申请日:2013-08-30

    CPC classification number: H01L29/94 H01L27/0805 H01L27/0811 H02M3/00 H02M3/18

    Abstract: A MOS capacitor with improved linearity is disclosed. In an exemplary embodiment, an apparatus includes a main branch comprising a first signal path having a first capacitor pair connected in series with reversed polarities and a second signal path having a second capacitor pair connected in series with reversed polarities, the first and second signal paths connected in parallel. The apparatus also includes an auxiliary branch comprising at least one signal path having at least one capacitor pair connected in series with reversed polarities and connected in parallel with the main branch. In an exemplary embodiment, the capacitors are MOS capacitors.

    Abstract translation: 公开了具有改善的线性度的MOS电容器。 在示例性实施例中,一种装置包括主分支,该主分支包括具有与反向极性串联连接的第一电容器对的第一信号路径和具有与反向极性串联连接的第二电容器对的第二信号路径,第一和第二信号路径 并联连接 该装置还包括辅助支路,该辅助支路包括至少一个信号路径,该至少一个信号路径具有与反向极性串联连接的至少一个电容器对并与主支路并联连接。 在示例性实施例中,电容器是MOS电容器。

    Subthreshold metal oxide semiconductor for large resistance

    公开(公告)号:US10128823B2

    公开(公告)日:2018-11-13

    申请号:US14642309

    申请日:2015-03-09

    Abstract: Certain aspects of the present disclosure generally relate to generating a large electrical resistance. One example circuit generally includes a first transistor having a gate, a source connected with a first node of the circuit, and a drain connected with a second node of the circuit. The circuit may also include a voltage-limiting device connected between the gate and the source of the first transistor, wherein the device, if forward biased, is configured to limit a gate-to-source voltage of the first transistor such that the first transistor operates in a sub-threshold region. The circuit may further include a second transistor configured to bias the voltage-limiting device with a current, wherein a drain of the second transistor is connected with the gate of the first transistor, a gate of the second transistor is connected with the first node, and a source of the second transistor is connected with an electric potential.

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