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    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM
    21.
    发明申请
    BACKSIDE ILLUMINATED IMAGE SENSOR WITH STRESSED FILM 有权
    带压片的背面照明图像传感器

    公开(公告)号：US20130032921A1

    公开(公告)日：2013-02-07

    申请号：US13649953

    申请日：2012-10-11

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

    Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

    Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

    Image sensor pixel cell with switched deep trench isolation structure
    23.
    发明授权
    Image sensor pixel cell with switched deep trench isolation structure 有权
    具有开关深沟槽隔离结构的图像传感器像素单元

    公开(公告)号：US09496304B2

    公开(公告)日：2016-11-15

    申请号：US14704493

    申请日：2015-05-05

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

    IPC: H01L29/66 ,  H01L27/146 ,  H04N5/378

    CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

    Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

    Circuit structure for providing conversion gain of a pixel array
    24.
    发明授权
    Circuit structure for providing conversion gain of a pixel array 有权
    用于提供像素阵列的转换增益的电路结构

    公开(公告)号：US09083899B2

    公开(公告)日：2015-07-14

    申请号：US13773437

    申请日：2013-02-21

    Applicant: OmniVision Technologies, Inc.

    Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L27/00 ,  H01J40/14 ,  H03G3/20 ,  H04N5/355 ,  H01L27/146 ,  H04N5/52

    CPC classification number: H04N5/3559 ,  H01L27/14601 ,  H04N5/355 ,  H04N5/52

    Abstract: Techniques and mechanisms for a pixel array to provide a level of conversion gain. In an embodiment, the pixel array includes conversion gain control circuitry to be selectively configured at different times for different operational modes, each mode for implementing a respective conversion gain. The conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—a supply voltage. In another embodiment, the conversion gain control circuitry selectively provides switched coupling of the pixel cell to—and/or switched decoupling of the pixel cell from—sample and hold circuitry.

    Abstract translation: 像素阵列的技术和机制提供一个转换增益水平。 在一个实施例中，像素阵列包括转换增益控制电路，以在不同的时间针对不同的操作模式进行选择性地配置，每个模式用于实现相应的转换增益。 转换增益控制电路选择性地提供像素单元与像素单元与电源电压的 - 和/或开关去耦合的切换耦合。 在另一个实施例中，转换增益控制电路选择性地提供像素单元与采样和保持电路的 - 和/或开关去耦合的切换耦合。

    COLOR FILTER INCLUDING CLEAR PIXEL AND HARD MASK
    25.
    发明申请
    COLOR FILTER INCLUDING CLEAR PIXEL AND HARD MASK 审中-公开
    彩色滤镜，包括清晰像素和硬掩模

    公开(公告)号：US20150091119A1

    公开(公告)日：2015-04-02

    申请号：US14565773

    申请日：2014-12-10

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: G02B5/20 ,  H01L27/146 ,  G02B1/10

    CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

    Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

    Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

    Compact in-pixel high dynamic range imaging
    26.
    发明授权
    Compact in-pixel high dynamic range imaging 有权
    紧凑的像素内高动态范围成像

    公开(公告)号：US08957359B2

    公开(公告)日：2015-02-17

    申请号：US13651092

    申请日：2012-10-12

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC: H01L27/146

    CPC classification number: H01L27/14612 ,  H04N5/3559

    Abstract: Embodiments of the invention describe providing a compact solution to provide high dynamic range imaging (HDRI or simply HDR) for an imaging pixel by utilizing a control node for resetting a floating diffusion node to a reference voltage value and for selectively transferring an image charge from a photosensitive element to a readout node. Embodiments of the invention further describe control node to have to a plurality of different capacitance regions to selectively increase the overall capacitance of the floating diffusion node. This variable capacitance of the floating diffusion node increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system, as well as increasing the signal-to-noise ratio (SNR) of the imaging system.

    Abstract translation: 本发明的实施例描述了提供一种紧凑的解决方案，以通过利用用于将浮动扩散节点复位到参考电压值的控制节点和用于选择性地传输图像电荷的方法来为成像像素提供高动态范围成像（HDRI或简单的HDR） 感光元件到读出节点。 本发明的实施例进一步描述控制节点必须具有多个不同的电容区域以选择性地增加浮动扩散节点的整体电容。 浮动扩散节点的这种可变电容增加了成像像素的动态范围，从而为主机成像系统提供了HDR，并且提高了成像系统的信噪比（SNR）。

    Negatively charged layer to reduce image memory effect
    27.
    发明授权
    Negatively charged layer to reduce image memory effect 有权
    负电荷层降低图像记忆效应

    公开(公告)号：US08816462B2

    公开(公告)日：2014-08-26

    申请号：US13660774

    申请日：2012-10-25

    Applicant: OmniVision Technologies, Inc.

    Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

    IPC: H01L27/146

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

    Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.

    Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

    Visible and infrared image sensor
    28.
    发明授权
    Visible and infrared image sensor 有权

    公开(公告)号：US10283553B2

    公开(公告)日：2019-05-07

    申请号：US15717071

    申请日：2017-09-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster ,  Howard E. Rhodes ,  Dominic Massetti

    IPC: H01L27/00 ,  H01L27/146 ,  H01L31/028

    Abstract: A method of image sensor fabrication includes forming a second semiconductor layer on a back side of a first semiconductor layer. The method also includes forming one or more groups of pixels disposed in a front side of the first semiconductor layer. The one or more groups of pixels include a first portion of pixels separated from the second semiconductor layer by a spacer region, and a second portion of pixels, where a first doped region of the second portion of pixels is in contact with the second semiconductor layer. Pinning wells are also formed and separate individual pixels in the one or more groups of pixels, and the pinning wells extend through the first semiconductor layer. Deep pinning wells are also formed and separate the one or more groups of pixels.

    Method of fabricating multi-wafer image sensor
    30.
    发明授权
    Method of fabricating multi-wafer image sensor 有权
    制造多晶片图像传感器的方法

    公开(公告)号：US09379159B2

    公开(公告)日：2016-06-28

    申请号：US14515307

    申请日：2014-10-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yin Qian ,  Dyson H. Tai ,  Jin Li ,  Chen-Wei Lu ,  Howard E. Rhodes

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14687 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.

    Abstract translation: 制造图像传感器的方法包括在形成像素阵列之后，在半导体衬底的成像区域中形成像素阵列并在半导体衬底的周边区域中形成沟槽。 周边区域位于成像区域的周边。 沟槽填充绝缘材料。 在用绝缘材料填充沟槽之后形成互连层。 第一晶片结合到第二晶片。 第一晶片包括互连层和半导体衬底。 半导体衬底的背面变薄以露出绝缘材料。 通过绝缘材料形成通孔。 通孔腔向下延伸到第二晶片的第二互连层。 通孔腔填充导电材料以形成通孔。 绝缘材料使导电材料与半导体衬底绝缘。

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