-
公开(公告)号：US11182892B2
公开(公告)日：2021-11-23
申请号：US16605725
申请日：2019-09-16
Applicant: KLA CORPORATION
Inventor： Detlef Michelsson , Yoel Feler
Abstract: A misregistration metrology system and method useful in the manufacture of semiconductor devices, the multilayered semiconductor devices including a first periodic structure having a first pitch along a first axis, the first periodic structure being formed together with a first layer of the multilayered semiconductor device, a second periodic structure having a second pitch along a second axis, the second axis not being parallel to the first axis, the second periodic structure being formed together with the first layer of the multilayered semiconductor device and a third periodic structure having a third pitch along a third axis, the third axis not being parallel to the first axis and the third axis not being parallel to the second axis, the third periodic structure being formed together with a second layer of the multilayered semiconductor device, the third periodic structure and the first and second periodic structures overlying one another, the misregistration metrology system and method including generating a single image of the first periodic structure, the second periodic structure and third periodic structure, thereby providing an aggregate signal, extracting a first component from the aggregate signal, the first component being due to the first periodic structure, extracting a second component from the aggregate signal, the second component being due to the second periodic structure, extracting a third component from the aggregate signal, the third component being due to the third periodic structure and analyzing the first component, the second component and the third component, thereby to ascertain misregistration between the first layer and the second layer.
-
公开(公告)号：US11073768B2
公开(公告)日：2021-07-27
申请号：US16598146
申请日：2019-10-10
Applicant: KLA Corporation
Inventor： Andrew V. Hill , Amnon Manassen , Gilad Laredo , Yoel Feler , Mark Ghinovker , Vladimir Levinski
IPC: G03F7/20 , G01N21/956 , G01N21/95
Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.
-
公开(公告)号：US20210082099A1
公开(公告)日：2021-03-18
申请号：US16605725
申请日：2019-09-16
Applicant: KLA CORPORATION
Inventor： Detlef Michelsson , Yoel Feler
Abstract: A misregistration metrology system and method useful in the manufacture of semiconductor devices, the multilayered semiconductor devices including a first periodic structure having a first pitch along a first axis, the first periodic structure being formed together with a first layer of the multilayered semiconductor device, a second periodic structure having a second pitch along a second axis, the second axis not being parallel to the first axis, the second periodic structure being formed together with the first layer of the multilayered semiconductor device and a third periodic structure having a third pitch along a third axis, the third axis not being parallel to the first axis and the third axis not being parallel to the second axis, the third periodic structure being formed together with a second layer of the multilayered semiconductor device, the third periodic structure and the first and second periodic structures overlying one another, the misregistration metrology system and method including generating a single image of the first periodic structure, the second periodic structure and third periodic structure, thereby providing an aggregate signal, extracting a first component from the aggregate signal, the first component being due to the first periodic structure, extracting a second component from the aggregate signal, the second component being due to the second periodic structure, extracting a third component from the aggregate signal, the third component being due to the third periodic structure and analyzing the first component, the second component and the third component, thereby to ascertain misregistration between the first layer and the second layer.
-
公开(公告)号：US12094100B2
公开(公告)日：2024-09-17
申请号：US17686382
申请日：2022-03-03
Applicant: KLA Corporation
Inventor： Mark Ghinovker , Yoel Feler
IPC: G06T7/68 , G03F9/00 , G06T7/00 , G06T7/73 , H01L21/027
CPC classification number: G06T7/0004 , G03F9/7092 , G06T7/68 , G06T7/73 , G06T2207/30148 , H01L21/0274
Abstract: A method of semiconductor metrology includes patterning a film layer on a semiconductor substrate to define a first field on the semiconductor substrate with a first pattern comprising at least a first target feature within a first margin along a first edge of the first field and to define a second field, which abuts the first field, with a second pattern comprising at least a second target feature within a second margin along a second edge of the second field, such that the second edge of the second field adjoins the first edge of the first field. The first target feature in the first margin is adjacent to the second target feature in the second margin without overlapping the second target feature. An image is captured of at least the first and second target features and is processed to detect a misalignment between the first and second fields.
-
公开(公告)号：US20240295827A1
公开(公告)日：2024-09-05
申请号：US17762030
申请日：2022-03-04
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Nir BenDavid , Yoram Uziel
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/70516 , G03F7/70625
Abstract: A method for semiconductor metrology includes depositing first and second film layers on a substrate, patterning the layers to define a first target including a first feature in the first layer and a second feature in the second layer adjacent to the first feature, and a second target on the substrate including a first part, which is identical to the first target, and a second part adjacent to the first part such that the second overlay target has rotational symmetry of 180° around a normal to the substrate. The method further includes capturing and processing a first image of the second target to compute a calibration function based on the first and second parts of the target, and capturing and processing a second image of the first target while applying the calibration function to estimate an overlay error between the first and second film layers at the first location.
-
Patent Agency Ranking
公开(公告)号：US12055859B2
公开(公告)日：2024-08-06
申请号：US18204662
申请日：2023-06-01
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.
-
公开(公告)号：US20240035812A1
公开(公告)日：2024-02-01
申请号：US18144540
申请日：2023-05-08
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker
CPC classification number: G01B11/272 , G06T7/0004 , G06T2207/30148
Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.
-
公开(公告)号：US11720031B2
公开(公告)日：2023-08-08
申请号：US17487725
申请日：2021-09-28
Applicant: KLA Corporation
Inventor： Inna Steely-Tarshish , Stefan Eyring , Mark Ghinovker , Yoel Feler , Eitan Hajaj , Ulrich Pohlmann , Nadav Gutman , Chris Steely , Raviv Yohanan , Ira Naot
CPC classification number: G03F7/70633 , G01N21/4785 , G01N21/4788 , G01N21/9501 , G03F7/70625
Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.
-
公开(公告)号：US11686576B2
公开(公告)日：2023-06-27
申请号：US17098835
申请日：2020-11-16
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker
CPC classification number: G01B11/272 , G06T7/0004 , G06T2207/30148
Abstract: A metrology target includes a first target structure set having one or more first target structures formed within at least one of a first working zone or a second working zone of a sample. The metrology target includes a second target structure set having one or more second target structures formed within at least one of the first working zone or the second working zone. The first working zone may include a center of symmetry that overlaps with a center of symmetry of the second working zone when an overlay error of one or more layers of the sample is not present. The metrology target may additionally include a third target structure set, a fourth target structure set, or a fifth target structure set.
-
公开(公告)号：US11164307B1
公开(公告)日：2021-11-02
申请号：US16935117
申请日：2020-07-21
Applicant: KLA Corporation
Inventor： Yoel Feler , Mark Ghinovker , Evgeni Gurevich , Vladimir Levinski , Alexander Svizher
Abstract: A metrology system and metrology methods are disclosed. The metrology system includes an illumination sub-system, a collection sub-system, a detector, and a controller. The controller is configured to receive an image of an overlay target on a sample, determine an apparent overlay between two working zones along a measurement direction based on the image, and calculate an overlay between the two sample layers by dividing the apparent overlay by a Moiré gain to compensate for Moiré interference.
-
-
-
-
-
-
-
-
-
Search Results
34
records
(took 0.016 seconds)
