公开(公告)号：US11034259B2

公开(公告)日：2021-06-15

申请号：US15820858

申请日：2017-11-22

Applicant: Honeywell International Inc.

Inventor： Octavian Ionescu ,  Octavian Buiu ,  Ion Georgescu ,  Viorel Georgel Dumitru ,  Bogdan-Catalin Serban ,  Mihai Brezeanu ,  Matei Serbanescu

IPC: B60L58/22 ,  G01R31/382 ,  H02J7/36

Abstract: A battery balancing system includes an energy balancing circuit. Multiple battery cells are coupled to the energy balancing circuit. A health assessment circuit is coupled to the multiple battery cells and configured to sense a state of health and a charge of each of the multiple battery cells. The balancing circuit switches energy between the multiple battery cells as a function of the sensed state of health and state of charge of each of the multiple battery cells to balance charge there between.

公开(公告)号：US10585058B2

公开(公告)日：2020-03-10

申请号：US15594184

申请日：2017-05-12

Applicant: Honeywell International Inc.

Inventor： Cornel Cobianu ,  Alisa Stratulat ,  Bogdan Serban ,  Octavian Buiu ,  Cazimir Gabriel Bostan ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Richard Davis

IPC: G01N27/22 ,  G01N27/414 ,  H01L29/49 ,  H01L29/51

Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

公开(公告)号：US10429333B2

公开(公告)日：2019-10-01

申请号：US15090075

申请日：2016-04-04

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： Bogdan-Catalin Serban ,  Cornel P. Cobianu ,  Mihai Brezeanu ,  Octavian Buiu ,  Cazimir Gabriel Bostan ,  Alisa Stratulat

IPC: G01N27/22

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A sensitive layer is disposed above at least one of the first electrode and the second electrode, where the sensitive layer is formed from a composition including a polyimide and a hydrophobic filler. A dust protection layer is disposed above the sensitive layer.

公开(公告)号：US20190154630A1

公开(公告)日：2019-05-23

申请号：US16236139

申请日：2018-12-28

Applicant: Honeywell International Inc.

Inventor： Cornel P. Cobianu ,  Bogdan-Catalin Serban ,  Viorel Georgel Dumitru ,  Octavian Buiu ,  Alisa Stratulat ,  Mihai Brezeanu

IPC: G01N27/414 ,  G01N33/00 ,  H03F3/45 ,  H01L29/788 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC classification number: G01N27/4141 ,  G01N27/4146 ,  G01N27/4148 ,  G01N33/0047 ,  H01L29/0649 ,  H01L29/66977 ,  H01L29/7832 ,  H01L29/788 ,  H03F3/45179 ,  H03F2200/261

Abstract: A gas sensor includes a field effect transistor supported on an oxide layer of a substrate, the field effect transistor having a doped source (p+ doped for T-FET and n+ doped for FET) and an n+ doped drain separated by an channel region (intrinsic for T-FET or slightly p-doped for FET), and a floating gate separated from the channel region by a gate oxide, a passivation layer covering the floating gate, and a sensing layer supported by the passivation layer, the sensing layer comprising nanofibers.

公开(公告)号：US20170363539A1

公开(公告)日：2017-12-21

申请号：US15527278

申请日：2015-11-11

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： Bogdan Serban ,  Octavian Buiu ,  Mihai Brezeanu ,  Cornel Cobianu ,  Cazimir Gabriel Bostan ,  Cristian Diaconu

IPC: G01N21/33 ,  G01N21/75 ,  G01N33/00 ,  G01N21/77

CPC classification number: G01N21/33 ,  G01N21/75 ,  G01N27/127 ,  G01N31/22 ,  G01N33/0047 ,  G01N33/54366 ,  G01N2021/7756 ,  G01N2021/7773

Abstract: In an embodiment, a benzene sensor comprises a substrate having an iodine complex disposed thereon, a radiation source configured to project UV radiation onto the complex, and a UV detector configured to detect a UV reflection off of the substrate having the iodine complex. The iodine complex can include a cyclodextrine-iodine complex such as an alpha-cyclodextrine-iodine complex, a β-cyclodextrine iodine complex, or any combination thereof.

公开(公告)号：US20170328855A1

公开(公告)日：2017-11-16

申请号：US15594184

申请日：2017-05-12

Applicant: Honeywell International Inc.

Inventor： Cornel Cobianu ,  Alisa Stratulat ,  Bogdan Serban ,  Octavian Buiu ,  Cazimir Gabriel Bostan ,  Mihai Brezeanu ,  Stefan Dan Costea ,  Richard Davis

IPC: G01N27/22 ,  H01L29/51 ,  H01L29/49

CPC classification number: G01N27/223 ,  G01N27/4141 ,  H01L29/4966 ,  H01L29/51

Abstract: An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

公开(公告)号：US20170248537A1

公开(公告)日：2017-08-31

申请号：US15423349

申请日：2017-02-02

Applicant: Honeywell International Inc.

Inventor： Bogdan-Catalin Serban ,  Mihai Brezeanu ,  Octavian Bulu ,  Cornel P. Cobianu

IPC: G01N27/22

CPC classification number: G01N27/225 ,  G01N27/226

Abstract: A relative humidity sensor is disclosed. The relative humidity sensor includes a first electrode and a second electrode disposed above a dielectric substrate. A humidity sensitive layer is disposed above at least one of the first electrode and the second electrode, where the humidity sensitive layer comprises a curable composition comprising cellulose acetate butyrate and a hydrophobic filler. In some embodiments, a dust protection layer is disposed above the humidity sensitive layer.

公开(公告)号：US20160238552A1

公开(公告)日：2016-08-18

申请号：US15135921

申请日：2016-04-22

Applicant: Honeywell International Inc.

Inventor： Mihai Brezeanu ,  Bogdan-Catalin Serban ,  Viorel Georgel Dumitru ,  Octavian Buiu

IPC: G01N27/414

CPC classification number: G01N27/4141 ,  C30B29/04 ,  H01L29/1602 ,  H01L29/45

Abstract: A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.