公开(公告)号：US20150097244A1

公开(公告)日：2015-04-09

申请号：US14048244

申请日：2013-10-08

Applicant: STMicroelectronics, Inc.

Inventor： QING LIU ,  Nicolas Loubet

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/0924 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/16 ,  H01L29/161 ,  H01L29/78603

Abstract: A method for making a semiconductor device includes forming a buried oxide stack on a semiconductor wafer. The buried oxide stack includes a first oxide layer, a nitride layer on the first oxide layer, and a second oxide layer on the nitride layer. A semiconductor layer is formed on the second oxide layer. First and second channel regions are formed in the semiconductor layer.

Abstract translation: 制造半导体器件的方法包括在半导体晶片上形成掩埋氧化层。 掩埋氧化物层包括第一氧化物层，第一氧化物层上的氮化物层和氮化物层上的第二氧化物层。 在第二氧化物层上形成半导体层。 第一和第二沟道区形成在半导体层中。

公开(公告)号：US20150206972A1

公开(公告)日：2015-07-23

申请号：US14675156

申请日：2015-03-31

Applicant: STMICROELECTRONICS, INC.

Inventor： QING LIU ,  NICOLAS LOUBET

IPC: H01L29/78 ,  H01L21/84 ,  H01L21/225 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092

CPC classification number: H01L29/7849 ,  H01L21/02532 ,  H01L21/2251 ,  H01L21/7624 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L21/84 ,  H01L21/845 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/7842 ,  H01L29/7848

Abstract: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region.

公开(公告)号：US20140377923A1

公开(公告)日：2014-12-25

申请号：US14478347

申请日：2014-09-05

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： QING LIU ,  JUNLI WANG

IPC: H01L21/8234 ,  H01L21/308 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/823431 ,  H01L21/02112 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/82 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/6681

Abstract: A method for fabricating a finFET device having an insulating layer that insulates the fin from a substrate is described. The insulating layer can prevent leakage current that would otherwise flow through bulk semiconductor material in the substrate. The structure may be fabricated starting with a bulk semiconductor substrate, without the need for a semiconductor-on-insulator substrate. Fin structures may be formed by epitaxial growth, which can improve the uniformity of fin heights in the devices.