公开(公告)号：US09231372B2

公开(公告)日：2016-01-05

申请号：US14279839

申请日：2014-05-16

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Gyoo Kim ,  Sang Hoon Kim ,  Jaegyu Park ,  Gyungock Kim ,  Ki Seok Jang

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/1021 ,  G02B6/12 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/12147 ,  H01S5/021 ,  H01S5/026 ,  H01S5/2086 ,  H01S5/2272 ,  H01S5/3223 ,  H01S2301/176 ,  H01S2304/00

Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.

Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。

公开(公告)号：US09118160B2

公开(公告)日：2015-08-25

申请号：US14195778

申请日：2014-03-03

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyundai Park ,  Gyungock Kim

IPC: H01S5/02 ,  H01S5/042 ,  H01S5/183

CPC classification number: H01S5/0218 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/18308

Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.

Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）。 VCSEL包括硅衬底，设置在硅衬底上的下反射层，设置在下反射层上的发光激光器和设置在光产生层上的上反射层。 下反射层，发光层和上反射层可以包括通过晶片接合单片地集成在第一杂质层上的III-V半导体光源有源层。

公开(公告)号：US08936951B2

公开(公告)日：2015-01-20

申请号：US13776428

申请日：2013-02-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  JiHo Joo

IPC: H01L21/00 ,  H01S5/30 ,  H01S5/026 ,  H01S5/32 ,  G02B6/12 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01S5/3031 ,  G02B6/12004 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/3223 ,  Y10S438/933

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。