公开(公告)号：US09993950B2

公开(公告)日：2018-06-12

申请号：US15650016

申请日：2017-07-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Feng Guan ,  Jikai Yao ,  Yingtao Wang ,  Xiaolong He ,  Tingting Zhou

IPC: G03B17/24 ,  B29C37/00 ,  G03F7/00 ,  B81C1/00 ,  B29C43/00

CPC classification number: B29C37/0053 ,  B29C43/003 ,  B81C1/0046 ,  G03B2217/242 ,  G03F7/0002

Abstract: An imprint template includes a first region and a second region located in the periphery of the first region. The first region is provided with a first imprint structure configured to imprint a first film layer pattern into a base material in a product region of a target substrate. The second region is provided with a second imprint structure configured to imprint a second film layer pattern into the base material in the periphery of the product region of the target substrate. And the second film layer pattern is used for assessing imprint quality of the first film layer pattern.

公开(公告)号：US20180019346A1

公开(公告)日：2018-01-18

申请号：US15718778

申请日：2017-09-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jincheng GAO ,  Bin Zhang ,  Xiaolong He ,  Xiangchun Kong ,  Qi Yao ,  Zhanfeng Cao ,  Zhengliang Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor, a method of fabricating the same, an array substrate and a display device are disclosed. The method of fabricating the thin film transistor comprises: forming a semiconductor layer; forming a conductive film that does not react with acid solution on the semiconductor layer to be employed as a protective layer; forming a source electrode and a drain electrode on the protective layer; and removing a portion of the protective layer between the source electrode and the drain electrode to expose a portion of the semiconductor layer between the source electrode and the drain electrode.

公开(公告)号：US09812469B2

公开(公告)日：2017-11-07

申请号：US15150549

申请日：2016-05-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhanfeng Cao ,  Feng Zhang ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Qi Yao ,  Zhengliang Li ,  Xiangchun Kong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/42384

Abstract: An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.

公开(公告)号：US20170207406A1

公开(公告)日：2017-07-20

申请号：US15215104

申请日：2016-07-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shi Shu ,  Xiaolong He ,  Wei Xu ,  Chuanxiang Xu ,  Yonglian Qi

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/502 ,  H01L27/3246 ,  H01L27/3262 ,  H01L51/0005 ,  H01L51/0007 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/56 ,  H01L2227/323

Abstract: A quantum dot light emitting diode, a display apparatus, and a manufacturing method are provided. The manufacturing method includes forming a first electrode, a first functional layer, a buffer layer, a quantum dot layer, a second functional layer and a second electrode on a base substrate sequentially, wherein the first functional layer is made from organic material, a material for the buffer layer includes a polar organic solvent, and forming the quantum dot layer includes forming a solution including quantum dots and a non-polar organic solvent above the buffer layer using inkjet printing method, the non-polar organic solvent and the polar organic solvent are capable of dissolving each other; and removing the polar organic solvent and the non-polar organic solvent to form the quantum dot layer.

公开(公告)号：US20170098714A1

公开(公告)日：2017-04-06

申请号：US14905251

申请日：2015-08-05

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Qi Yao ,  Zhanfeng Cao ,  Bin Zhang ,  Xiaolong He ,  Jincheng Gao ,  Xiangchun Kong ,  Wei Zhang

IPC: H01L29/786 ,  H01L21/28 ,  H01L29/49 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L29/78606 ,  H01L21/28 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908

Abstract: Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which relates to the field of display technology, and solves the problem that the adhesion of the electrode thin film with the adjacent thin film layer in the thin film transistor of the prior art is relatively bad. More specifically, an embodiment of the present invention provides a thin film transistor, comprising a gate, a source, a drain and a buffer layer, the buffer layer is located at one side or two sides of the gate, the source or the drain, the material of the buffer layer is a copper alloy material, the copper alloy material contains nitrogen element or oxygen element, the copper alloy material further contains aluminum element.

公开(公告)号：US10700107B2

公开(公告)日：2020-06-30

申请号：US15781327

申请日：2017-10-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Zhifu Li ,  Guangcai Yuan ,  Haijiao Qian ,  Dongsheng Li

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/10 ,  H01L21/268 ,  H01L29/66 ,  H01L21/02

Abstract: It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.

公开(公告)号：US10700103B2

公开(公告)日：2020-06-30

申请号：US15772304

申请日：2017-08-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Zhifu Li ,  Zhiyuan Ji ,  Jikai Yao

IPC: H01L27/12 ,  G09G3/32 ,  H01L29/417 ,  H01L29/423 ,  G02F1/1335 ,  G02F1/1333 ,  H01L29/786

Abstract: An array substrate, a method for fabricating the same, and a display device are disclosed. The array substrate includes a substrate and a plurality of pixel units on the substrate. Each pixel unit comprises at least a thin film transistor and an ILED. A drain of each thin film transistor is connected with a first pole of each ILED through a first electrode line, and a second pole of each ILED is connected with a second electrode line. Since the ILEDs have the advantages of small size, high brightness, high contrast, lightness of weight, low consumption, wide gamut, high efficiency, long lifetime, quick response or the like, the array substrate onto which the ILEDs are applied by transferring has a high resolution, an improved display effect or the like.

公开(公告)号：US20190259879A1

公开(公告)日：2019-08-22

申请号：US15781327

申请日：2017-10-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaolong He ,  Zhifu Li ,  Guangcai Yuan ,  Haijiao Qian ,  Dongsheng Li

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: It is provided a low-temperature polysilicon thin film transistor formed on a substrate, including: a gate electrode on the substrate; an active layer on the gate electrode, the active layer including a channel region, the channel region having a polysilicon region and amorphous silicon regions respectively on both sides of the polysilicon region; and an etch stop layer on the active layer. An orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the gate electrode on the substrate, and an area of the orthogonal projection the polysilicon region on the substrate is smaller than an area of the orthogonal projection of the gate electrode on the substrate. The orthogonal projection of the polysilicon region on the substrate is located within an orthogonal projection of the etch stop layer on the substrate.

公开(公告)号：US10225907B2

公开(公告)日：2019-03-05

申请号：US15533144

申请日：2016-05-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Xu ,  Shi Shu ,  Xiaolong He ,  Jikai Yao

IPC: H01L33/10 ,  H01L27/32 ,  H01L31/10 ,  H01L51/50 ,  H01L21/02 ,  C09K11/02 ,  H05B33/14 ,  C09K11/56 ,  C09K11/66 ,  C09K11/88 ,  H01L27/30 ,  H01L31/101 ,  H01L51/00 ,  H01L51/42 ,  H01L51/52 ,  H05B33/10 ,  H01L31/0352

Abstract: A light emitting device, a fabricating method thereof, and a display device are disclosed. In the light emitting device, a light emitting functional layer includes at least two QD light emitting layers which emit light of different colors, and a transparent insulating layer which is arranged between any two neighboring QD light emitting layers. The light emitting device has a reduced power consumption, and the problem of shift in color of the emitted light due to high-energy excitons transfer is overcome.

公开(公告)号：US10211758B2

公开(公告)日：2019-02-19

申请号：US15134895

申请日：2016-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fang He ,  Xiaolong He ,  Zhen Liu ,  Tian Yang ,  Yanbing Wu

IPC: H02N1/04

Abstract: A friction electric generator and a manufacturing method thereof are provided. The friction electric generator includes a first substrate and a second substrate disposed oppositely, a first electrode and a polymer insulating layer sequentially formed on a side of the first substrate facing the second substrate; a second electrode formed on a side of the second substrate facing the first substrate; wherein, the first electrode and the second electrode are each made of a flexible conductive substance, the first substrate and the second substrate are each made of a flexible insulating substance, and the polymer insulating layer and the second electrode is capable of generating electricity by friction.